OTS修饰的不同厚度酞菁铜OTFT的研究

刘 向; 刘 惠; 薛钰芝

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OTS修饰的不同厚度酞菁铜OTFT的研究

器件制备技术及器件物理 | 更新时间：2020-08-12

- OTS修饰的不同厚度酞菁铜OTFT的研究
- Organic Thin Film Transistors Modified by OTS with Different Thicknesses of CuPc
- 液晶与显示 2009年24卷第1期页码：66-70
- 作者机构：
  
  1. 大连交通大学材料学院, 辽宁大连 116028
  2. 大连理工大学电信学院, 辽宁大连 116024,E-mail:liuxiang@djtu.edu.cn
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： TN27
- 收稿日期：2008-07-08，
  
  修回日期：1900-01-02，
  
  网络出版日期：2009-02-20，
  
  纸质出版日期：2009-02-20
- 稿件说明：
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刘向;刘惠;薛钰芝. OTS修饰的不同厚度酞菁铜OTFT的研究[J]. 液晶与显示, 2009,24(1): 66-70

LIU Xiang;LIU Hui;XUE Yu-zhi. Organic Thin Film Transistors Modified by OTS with Different Thicknesses of CuPc[J]. 液晶与显示, 2009,24(1): 66-70
刘向;刘惠;薛钰芝. OTS修饰的不同厚度酞菁铜OTFT的研究[J]. 液晶与显示, 2009,24(1): 66-70 DOI：

LIU Xiang;LIU Hui;XUE Yu-zhi. Organic Thin Film Transistors Modified by OTS with Different Thicknesses of CuPc[J]. 液晶与显示, 2009,24(1): 66-70 DOI：

摘要

用十八烷基三氯硅烷(OTS)修饰了不同厚度的酞菁铜(CuPc)有机薄膜晶体管器件

对比酞菁铜厚度为15、40、80 nm的3种器件性能后

得到40 nm的酞菁铜器件具有最高载流子迁移率。分析了OTS修饰的绝缘层表面对器件性能的影响

得到的40 nm厚度酞菁铜器件载流子迁移率为4.310

-3

/Vs

阈值电压为-9.5 V。

Abstract

Organic thin film transistors (OTFTs) were modified by silane coupling agents- octadecyltrichlorosilane (OTS) with different thicknesses of CuPc. Comparing with different thicknesses of CuPc layer of 15 nm、40 nm and 80 nm

the 40 nm CuPc devices have the best performance on mobility. The performance of OTFTs that were modified by OTS has been investigated. Electrical parameters such as carrier mobility and threshold voltage by field effect measurement have been calculated. For OTFT based on the 40 nm CuPc

the field-effect mobility is 4.310

-3

/Vs and threshold voltage is -9.5 V.

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references

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