热CVD法制备的碳纳米管线阵列的场发射特性

曹连振; 蒋 红; 宋 航; 李志明; 赵海峰; 刘 霞; 郭万国; 阎大伟; 孙晓娟; 缪国庆

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热CVD法制备的碳纳米管线阵列的场发射特性

器件制备技术及器件物理 | 更新时间：2020-08-12

- 热CVD法制备的碳纳米管线阵列的场发射特性
- Field Emission Characters of Patterned Carbon Nanotube Line Array Emitters Prepared by Thermal Chemical Vapor Deposition
- 液晶与显示 2009年24卷第1期页码：43-47
- 作者机构：
  
  1. 中国科学院研究生院北京,100039
  2. 中国科学院长春光学精密机械与物理研究所,吉林长春,130033
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： TN383+.1;TN304.1+8
- 收稿日期：2008-07-24，
  
  修回日期：1900-01-02，
  
  网络出版日期：2009-02-20，
  
  纸质出版日期：2009-02-20
- 稿件说明：
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曹连振;蒋红;宋航;李志明;赵海峰;刘霞;郭万国;阎大伟;孙晓娟;缪国庆. 热CVD法制备的碳纳米管线阵列的场发射特性[J]. 液晶与显示, 2009,24(1): 43-47

CAO Lian-zhen;JIANG Hong;SONG Hang;LI Zhi-ming;ZHAO Hai-feng;LV Wen-hui;LIU Xia;GUO Wan-guo;YAN Da-wei;SUN Xiao-juan;MIAO Guo-qing. Field Emission Characters of Patterned Carbon Nanotube Line Array Emitters Prepared by Thermal Chemical Vapor Deposition[J]. 液晶与显示, 2009,24(1): 43-47
曹连振;蒋红;宋航;李志明;赵海峰;刘霞;郭万国;阎大伟;孙晓娟;缪国庆. 热CVD法制备的碳纳米管线阵列的场发射特性[J]. 液晶与显示, 2009,24(1): 43-47 DOI：

CAO Lian-zhen;JIANG Hong;SONG Hang;LI Zhi-ming;ZHAO Hai-feng;LV Wen-hui;LIU Xia;GUO Wan-guo;YAN Da-wei;SUN Xiao-juan;MIAO Guo-qing. Field Emission Characters of Patterned Carbon Nanotube Line Array Emitters Prepared by Thermal Chemical Vapor Deposition[J]. 液晶与显示, 2009,24(1): 43-47 DOI：

摘要

采用半导体光刻技术在硅衬底上获得图形化掩膜

然后用热化学气相淀积(T-CVD)的方法制备了图形化的碳纳米管线阵列

用扫描电镜和拉曼光谱仪对碳纳米管进行了表征。研究了图形化碳纳米管线阵列的场发射特性

并与无图形化处理的碳纳米管薄膜样品的场发射特性进行了比较。当发射电流密度达到10 A/cm

时

无图形化处理的碳纳米管薄膜、10 m碳纳米管线阵列以及2 m碳纳米管线阵列样品的开启电场分别为3 V/m、2.1 V/m和1.7 V/m;而当电场强度达3.67 V/m时

相应的电流密度分别为2.57 mA/cm

、4.65 mA/cm

和7.87 mA/cm

。实验结果表明

图形化处理后的碳纳米管作为场发射体

其场发射特性得到了明显的改善。对改善的原因进行了分析和讨论。

Abstract

Using standard photolithography

patterned carbon nanotube line arrays were fabricated on silicon substrates by thermal chemical vapor deposition. Scanning electron microscopy and Raman spectroscopy were used to characterize the structure of the carbon nanotubes. The carbon nanotubes were very uniform and about 50 nm in diameter and 2 m in length. The Raman spectrum showed that the carbon nanotubes were multi-walled carbon nanotubes. Field emission characteristics of the samples were characterized. It was found that the non-patterned carbon nanotube films

10 m and 2 m size carbon nanotube line arrays field emission characteristics were gradually improved with turn-on field of 3 V/m

2.1 V/m

1.7 V/m and emission current density at applied electric field 3.67 V/m were 2.57 mA/cm

4.65 mA/cm

7.87 mA/cm

respectively. The reasons may attribute to the field-screening effect and edge effect by analyzing the experimental results.

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Keywords

references

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