利用射频磁控溅射法在柔性衬底上制备ZnO:Zr透明导电薄膜

刘汉法; 张化福; 类成新; 袁玉珍; 袁长坤

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利用射频磁控溅射法在柔性衬底上制备ZnO:Zr透明导电薄膜

器件制备技术及器件物理 | 更新时间：2020-08-12

- 利用射频磁控溅射法在柔性衬底上制备ZnO:Zr透明导电薄膜
- Fabrication of ZnO:Zr Film Deposited on Flexible Substrate by RF Magnetron Sputtering
- 液晶与显示 2009年24卷第2期页码：183-186
- 作者机构：
  
  山东理工大学物理与光电信息技术学院,山东淄博,255049
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： TN305.3
- 收稿日期：2008-09-04，
  
  修回日期：2008-10-24，
  
  网络出版日期：2009-04-30，
  
  纸质出版日期：2009-04-30
- 稿件说明：
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刘汉法;张化福;类成新;袁玉珍;袁长坤. 利用射频磁控溅射法在柔性衬底上制备ZnO:Zr透明导电薄膜[J]. 液晶与显示, 2009,24(2): 183-186

LIU Han-fa;ZHANG Hua-fu;LEI Cheng-xin;YUAN Yu-zhen;YUAN Chang-kun. Fabrication of ZnO:Zr Film Deposited on Flexible Substrate by RF Magnetron Sputtering[J]. 液晶与显示, 2009,24(2): 183-186
刘汉法;张化福;类成新;袁玉珍;袁长坤. 利用射频磁控溅射法在柔性衬底上制备ZnO:Zr透明导电薄膜[J]. 液晶与显示, 2009,24(2): 183-186 DOI：

LIU Han-fa;ZHANG Hua-fu;LEI Cheng-xin;YUAN Yu-zhen;YUAN Chang-kun. Fabrication of ZnO:Zr Film Deposited on Flexible Substrate by RF Magnetron Sputtering[J]. 液晶与显示, 2009,24(2): 183-186 DOI：

摘要

利用射频磁控溅射法首次在室温水冷柔性衬底 PET上制备出了可见光透过率高、电阻率低的掺锆氧化锌(ZnO : Zr)透明导电薄膜。X射线衍射和扫描电子显微镜表明，ZnO : Zr薄膜为六角纤锌矿结构的多晶薄膜，且具有平行于衬底方向的择优取向。实验获得ZnO : Zr薄膜的最小电阻率为1.55×10

-3

Ω·cm。实验制备的ZnO : Zr薄膜具有良好的附着性能，其可见光区平均透过率超过90％。

Abstract

Zirconium-doped zinc oxide (ZnO : Zr) transparent conducting thin films with high transmittance

low resistivity and good adhesion were firstly prepared on water-cooled polyethylene glycol terephthalate flexible substrates by RF magnetron sputtering. X-ray diffraction and scanning electron microscopy show that the ZnO : Zr films are polycrystalline with a hexagonal structure and a preferred orientation parallel to the substrate. The lowest resistivity obtained in our experiment is 1.55×10

-3

Ω·cm. The average transmittance of the films is over 90% in the wavelength range of the visible spectrum.

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references

Yang T L, Zhang D H, Ma J, et al. Transparent conducting ZnO∶Al films deposited on organic substrates deposited by r.f. magnetron-sputtering [J]. Thin Solid Films, 1998, 326(1-2):60-62.

Ma J, Li S Y, Zhao J Q, et al. Preparation and properties of indium tin oxide films deposited on polyester substrates by reactive evaporation [J]. Thin Solid Films, 1997, 207(1-2):200-202.

Moon C S, Han J G. Low temperature synthesis of ITO thin film on polymer in Ar/H2 plasma by pulsed DC magnetron sputtering [J]. Thin Solid Films, 2008, 516(19): 6560-6564.

Li X D,Zhu H B,Chu J B,et al. Indium tin oxide films prepared by radio frequency magnetron sputtering under low vacuum level [J]. Chin. J. Liquid Crystals and Displays,2007, 22(5):553-559.

Llaus E, Rainald M. Carrier transport in polycrystalline ITO and ZnO∶Al II: The influence of grain barriers and boundaries [J]. Thin Solid Films, 2008, 516(17):5829-5835.

Fang G J, Li D J, Yao B L. Influence of post-deposition annealing on the properties of transparent conductive nanocrystalline ZAO thin films prepared by RF magnetron sputtering with highly conductive ceramic target [J]. Thin Solid Films, 2002, 418(2):156-162.

Suchea M, Christoulakis S, Katsarakis N, et al. Comparative study of zinc oxide and aluminum doped zinc oxide transparent thin films grown by direct current magnetron sputtering [J]. Thin Solid Films,2007, 515(16): 6562-6566.

Paul G K, Bandyopadhyay S B, Sen S K, et al. Structural, optical and electrical studies on sol-gel deposited Zr doped ZnO films [J]. Materials Chem. and Phys., 2003, 79(1): 71-75.

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