掺杂氧化锌薄膜的最新进展

刘 波; 赵小如; 冯娴娴; 刘 凯; 赵 亮

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掺杂氧化锌薄膜的最新进展

器件制备技术及器件物理 | 更新时间：2020-08-12

- 掺杂氧化锌薄膜的最新进展
- Recent Research Developments of Doped ZnO Films
- 液晶与显示 2009年24卷第4期页码：522-527
- 作者机构：
  
  西北工业大学理学院应用物理系, 陕西西安 710072,E-mail: lbspinach@126.com
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： TN304.2+1
- 收稿日期：2009-02-21，
  
  修回日期：1900-01-02，
  
  网络出版日期：2009-08-30，
  
  纸质出版日期：2009-08-30
- 稿件说明：
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刘波;赵小如;冯娴娴;刘凯;赵亮. 掺杂氧化锌薄膜的最新进展[J]. 液晶与显示, 2009,24(04): 522-527

LIU Bo;ZHAO Xiao-ru;FENG Xian-xian;LIU Kai;ZHAO Liang. Recent Research Developments of Doped ZnO Films[J]. 液晶与显示, 2009,24(04): 522-527
刘波;赵小如;冯娴娴;刘凯;赵亮. 掺杂氧化锌薄膜的最新进展[J]. 液晶与显示, 2009,24(04): 522-527 DOI：

LIU Bo;ZHAO Xiao-ru;FENG Xian-xian;LIU Kai;ZHAO Liang. Recent Research Developments of Doped ZnO Films[J]. 液晶与显示, 2009,24(04): 522-527 DOI：

摘要

掺杂氧化锌(ZnO)薄膜是一种新型的透明导电氧化物(TCO)材料

因有替代氧化铟锡(ITO)的潜能而成为当今TCO材料中的研究热点

其优异的光学和电学性能使其在平板显示器、太阳能电池等光电器件中具有光明的应用前景。文章对ZnO基半导体材料的结构和性能进行了介绍

综述了近年来以ZnO薄膜为基体的n型和p型掺杂的研究进展

并在此基础上对未来的发展方向进行了展望。

Abstract

The doped ZnO film is a new type of transparent and conductive oxide (TCO) material which was widely studied by the researchers because of its potential candidate to replace the ITO. There are a lot of potential applications in the liquid crystal devices

solar cells

et al

due to its excellent electrical and optical properties. Compared to the previous works

the latest developments of the n-type and p-type ZnO semiconductors in the past two years were summarized and future works were indicated and discussed in this paper.

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Keywords

references

. Fang G J J,Li D J,Yao B L. Influence of post-deposition annealing on the properties of transparent conductive nanocrystalline ZAO thin films prepared by RF magnetron sputtering with highly conductive ceramic target [J].The Solid Films, 2002,418(2):156-162.

. Pei Z L,Sun C,Tan M H,et al.Study on ZnO:Al(ZAO) films by DC reaction sputtering[J]. Progress In Natural Science, 2001,11(6):439-446.

. Chen M,Wang X,Pei Z L,et al.Dependence of structural,electrical and optical properties of ZnO:Al films on substrate temperature[J]. J. Materials Research,2001,16(4):2118-2123.

. Ollinger M,Craciun V,Nagore S,et al.Effect of oxygen pressure during ZnO:Al coating of ZnS:Ag phosphor on cathodoluminescent degradation lifetime [J].Advanced Optical Processing of Materials,2003,780(6):149-154.

. Herrmann D,Oertel M,Menner R,et al.Analysis of relevant parameters for ZnO:Al film deposition based data from reactive and non-reactive DC magnetron sputtering [J].Surface and Coatings Technology,2003,174(3):229-234.

. Musat V,Teixeira B,Fortunato E,et al.Effect of post-heat treatment on the electrical and optical properties of ZnO : Al thin films [J].Thin Solid Films,2006, 502:219-222.

. Shukla R K, Srivastava Anchal, Srivastava Atul,et al.Growth of transparent conducting nanocrystalline Al doped ZnO thin films by pulsed laser deposition [J]. J. Crystal Growth,2006,294:427-431.

. Ashrafi Abma,Suemune I,Kumano H,et al.Nitrogen-doped p-type ZnO prepared with H2O vapor-assisted metalorganic molecular-beam epitaxy [J]. Japan. J. Appl. Phys.,2002, 41:1281-1284.

. Tamura K,Makino T,Tsukazaki A,et al.Donor-acceptor pair luminescence in nitrogen-doped ZnO films grown on lattice -matched ScAiMhO4 (0001) substrates [J].Solid State Communications,2003, 127:265-269.

. Matsue H,Saeki H,Tabata H,et al.Influnce of codoping with ga on the electrical and properties of N-doped ZnO films [J].J. The Electrochemical Society,2003,150:508-512.

. Wang J Z,Du G T,Zhao B J, et al.Epitaxial growth of NH3-doped thin films on 〈02(2)over-bar-4〉 oriented sapphire substrates [J]. J. Crystal Growth, 2003,255:293-297.

. Sahu D R, Lin Shin-Yuan,Huang JOW-Lay.Study on the electrical and optical properties of Ag/Al-doped ZnO coatings deposited by electron beam evaporation [J]. Appl. Surface Science, 2007,253:4886-4890.

. Kim In Soo, Jeong Eun-Kyung, Kim Do yun,et al. Investigation of p-type behavior in Ag-doped ZnO thin films by E-beam evaporation [J]. Appl. Surface Science, 2009,255(7):4011-4014.

. 张化福,袁玉珍,刘云燕.柔性透明导电薄膜ZAO.[J]. 液晶与显示 ,2008,23(4):489-493.

. Xue S W,Zu X T,Zheng X G,et al.Effect of annealing and dpant concentration on the optical characteristics of ZnO:Al thin films by sol-gel technique [J]. Phys. B,2006, 382:201-204.

. Chen Xin,Guan Wenjie,Guan Wenjie,et al.Influence of substrate temperature and post-treatment on the properties of ZnO : Al films prepared by pulsed laser deposition [J]. Appl. Surface Science,2005, 252:1561-1567.

. Lin Wei,Ma Ruixin,Shao Wei,et al.Structural electrical and optical properties of Gd doped and undoped ZnO : Al(ZAO) thin films prepared by RF magnetron sputterin [J].Appl. Surface Science, 2007, 253:5179-5183.

. 钱庆,叶志镇,袁国栋,等.Al、N共掺杂实现ZnO的p型转变及其掺杂机理探讨 [J]. 真空科学与技术学报, 2004,24(5):347-349.

. Jiang Minhong,Liu Xinyu.Structural electrical optical properties of Al-Ti codoped ZnO(ZATO) thin films prepared by RF magnetron sputtering [J]. Appl. Surface Science,2008,255:3175-3178.

. Kim Kwang Joo,Park Young Ran.Spectroscopic illipsometry study of optical transitions in alloys [J]. Appl. Phys. Lett., 2002,81(8):1420-1422.

. Sato Y,Sato S. Preparation and some properties of nitrogen-mixed ZnO thin films[J].Thin Solid films,1996, 281/282 (1/2):445-448.

. Kamata A,Mitsuhashi H,Fujita H.Origin ofthe low doping efficiency of nitrogen acceptors in ZnSe grown by metalorganic chemical vapor deposition [J].Appl. Phys. Lett., 1993,63:3353-3355.

. Yamamoto T,Yoshida H K.Unipolarity of ZnO with a 35wide-band gap and its solution using codoping method[J]. J.Cryst Growth, 2000,552:214-215.

. Zhang Zhenghai,Ye Zhi-Zhen,Ma Da-wei, et al.Preparation and characteristic of p-type ZnO films by Al-N codoping technique [J].Material Lett., 2005,59:2732-2734.

. Wang Bin,Zhao Yue,Min Jiahua,et al.Ag-N dual-accept doping for the fabrication of p-type Zno [J]. Appl. Phys. A,2009,94:715-718.

. 李驰平,张铭,宁雪梅,等.ZnO薄膜p型掺杂的研究进展 [J]. 材料导报 ,2007,(5):297-300.

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