反铁电体电子发射性能的研究

蔡雪梅; 周应华

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反铁电体电子发射性能的研究

材料物理和化学 | 更新时间：2020-08-12

- 反铁电体电子发射性能的研究
- Electron Emission Properties of Antiferroelectrics
- 液晶与显示 2009年24卷第4期页码：502-506
- 作者机构：
  
  1. 重庆邮电大学计算机学院,四川重庆,400065
  2. 重庆邮电大学光电学院,四川重庆 400065,E-mail:caixm@cqupt.edu.cn
- 作者简介：
- 基金信息：
  
  null()
- DOI：
  中图分类号： TN141
- 收稿日期：2008-12-18，
  
  修回日期：1900-01-02，
  
  网络出版日期：2009-08-30，
  
  纸质出版日期：2009-08-30
- 稿件说明：
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蔡雪梅;周应华. 反铁电体电子发射性能的研究[J]. 液晶与显示, 2009,24(04): 502-506

CAI Xue-mei;ZHOU Ying-hua. Electron Emission Properties of Antiferroelectrics[J]. 液晶与显示, 2009,24(04): 502-506
蔡雪梅;周应华. 反铁电体电子发射性能的研究[J]. 液晶与显示, 2009,24(04): 502-506 DOI：

CAI Xue-mei;ZHOU Ying-hua. Electron Emission Properties of Antiferroelectrics[J]. 液晶与显示, 2009,24(04): 502-506 DOI：

摘要

进行了锆钛酸铅反铁电体和铁电体的电子发射对比实验

研究了抽取电压、电极绝缘保护层和相变特性等对反铁电体电子发射性能的影响。通过涂覆绝缘保护层

大幅提高了表面击穿阈值

从而提高了施加场强;通过施加抽取电压

提高了发射电流密度。两种方式均使电流发射密度得到提高

最高达到153 A/cm

。利用相变理论

得到反铁电体相变时的强扩散和表面的半导性使局部或表面相变温度下降

相变温度的下降有助于电子发射

合理解释了观察到的反铁电体中发射电流密度比铁电体更高和电子发射起始阈值更低的现象。

Abstract

The electron emission results in antiferroelectrics and ferroelectrics were compared and effects of the abstract field

the insulation layer on the electrode and the phase transition properties on the results of electron emission in antiferroelectrics are researched. More electrons were collected and higher current densities were obtained while the abstract field was higher. An insulation layer was coated on the electrode of the sample to prevent the discharge between the emission surface and the rear electrode so that the exerted field could be greatly enhanced and higher current density was obtained under this condition. Thus the maximum electron emission current density was increased to 153 A/cm

in antiferroelectrics by these two method. The lower curie temperature due to the strong diffusion during phase transition and the semi-conductivity of the surface layer makes electron emission easier

thus a lower starting threshold of emission and a higher electron emission current density were observed in antiferroelectrics than that in ferroelectrics.

关键词

Keywords

references

. Zhang Enguan, Yan Xiadin, Liu Xiaopin, et al.Experimental studies of ferroelectric cathodes //1994 Trl-service/ Nasa Cathode Workshop, Cleveland, Ohio, USA, 1994:49-51.

. 樊志琴,蔡根旺,王世建,等.碳纳米管膜场发射三极管的制备及特性研究 [J]. 液晶与显示, 2008,23(1):30-34.

. 于灵敏,朱长纯.提高丝网印刷ZnO纳米针场发射的均匀性和稳定性研究 [J]. 液晶与显示, 2008,23(2):148-152.

. Gundel H, Handerek J, Reige H,et al. Electric field-excited electron emission from PLZT-X/65/35 ceramics [J]. Ferroelectrics, 1990, 110:183-187.

. Kygel V D, Rosenman G. Suppression of polarization switching in triglycine sulfate crystals [J]. J. Appl. Phys., 1996, 80(9):5256-5249.

. Rosenman G I, Letuchev V V, Chepelev Yu L,et al. Emission of electrons on switching of the Gd2(Moo4)3 ferroelectric in electric field [J]. Appl. Phys. Lett., 1990, 56(7):689-694.

. 蔡雪梅.PZT阴极的XPS研究 [J]. 重庆邮电大学学报 ,2008,20(1):119-122.

. Gleizer J Z, Hadas Y, Gurovitch V T, et al. High current multicapillary dielectric cathodes //Plasma Science, 2008 IEEE 35th International Conference,Karlsruhe, Germany:Nuclear & Plasma Society,2008:1-4.

. Wu Biyan.Study of the electron emission from PZT ferroelectric cathodes //Joint 31st International Conference on Infared Milimeter Waves And 14th International Conference On Teraherz Electronics,Shanghai,China:Shanghai Institute of Technical Physics, CAS,2006:499 - 499.

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