Process optimization based on products of pixel top design

Yan-ming LYU; Bin-bin CAO; Fang-fang LI; Hui AN; Cheng-zhi YE; Fa-jie LI; Zeng-qian Yang; Jun-lin PENG; Yao-yao FENG; Zeng-li Liu; Xiang-wan LU; Heng-bin LI

doi:10.3788/YJYXS20203503.0219

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Process optimization based on products of pixel top design

Materials and Devices | 更新时间：2020-08-12

- Process optimization based on products of pixel top design
- Chinese Journal of Liquid Crystals and Displays Vol. 35, Issue 3, Pages: 219-226(2020)
- 作者机构：
  
  合肥鑫晟光电科技有限公司, 安徽合肥 230001
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20203503.0219
  CLC： TN141.9
- Received：30 August 2019，
  
  Revised：15 November 2019，
  
  Accepted：15 November 2019，
  
  Published：05 March 2020
- 稿件说明：
移动端阅览
Yan-ming LYU, Bin-bin CAO, Fang-fang LI, et al. Process optimization based on products of pixel top design[J]. Chinese journal of liquid crystals and displays, 2020, 35(3): 219-226.
DOI：

Yan-ming LYU, Bin-bin CAO, Fang-fang LI, et al. Process optimization based on products of pixel top design[J]. Chinese journal of liquid crystals and displays, 2020, 35(3): 219-226. DOI： 10.3788/YJYXS20203503.0219.

摘要

HADS产品通常使用有机膜材料来减小寄生电容，以实现高像素密度（PPI）显示。本文对如何改善以顶层ITO为像素电极（Pixel Top）设计的有机膜产品的公共电极ITO与数据线间短路（DCS）不良进行了工艺优化研究。首先，通过显微镜、聚焦离子束对HADS有机膜产品DCS不良发生机理进行了分析，进而提出了第一钝化绝缘层刻蚀工序省略、保留第一钝化绝缘层至公共电极与像素电极间第二钝化绝缘层刻蚀时进行“一步刻蚀”的工艺流程变更改善方案。针对新工艺流程验证中TFT栅极过孔处第一钝化绝缘层出现的底切不良，通过调整等离子增强化学气相沉积成膜参数改善第一钝化绝缘层膜质，并选取最优成膜条件进一步调整干法刻蚀参数改善刻蚀形貌，获得了优良的栅极过孔刻蚀坡度角。优化后的“一步刻蚀”工艺进行的TFT基板，其栅极过孔第一钝化绝缘层坡度角小于40°，与栅极绝缘层间无明显刻蚀台阶。量产验证有机膜缺失导致的DCS发生率降为0。通过优化工艺，在降低产品不良率的同时还减少了工艺步骤，提升了产能。

Abstract

HADS products typically use organic film materials to reduce parasitic capacitance for high PPI display. In this paper

the process optimization of the common electrode ITO and the data line short-circuit defect of the organic film product designed by the top ITO for the pixel electrode (Pixel Top) is improved. Firstly

the mechanism of DCS failure of HADS organic film products is analyzed by microscope and Focused Ion beam. A 'one-step etch' process variation improvement scheme which skips the PVX1 etch step and retains PVX1 until PVX2 etch is proposed. Aiming at the problem of PVX1 layer undercut of TFT gate

via

hole in the new process verification experiment

the PVX1 film quality is improved by adjusting the PECVD film formation parameters. The optimum film formation condition is selected to further adjust the dry etch process

and an excellent slope angle is obtained. On the TFT substrate which uses the optimized one-step etching process

the PVX1 slope angle of gate

via

hole is less than 40° and there is no significant step between the PVX1 and the GI layer

and there is no obvious step between the PVX1 and the GI layer. The mass production rate of the DCS caused by the absence of the organic film is reduced to zero. By optimizing the process

the product defect rate is reduced while the process steps are reduced and the production capacity is increased.

关键词

Keywords

references

李尧.新型聚合物绝缘材料的设计、制备及其在有机薄膜晶体管上的应用研究[D].长春: 吉林大学, 2016: 15-23. http://cdmd.cnki.com.cn/Article/CDMD-10183-1016079180.htm

LI Y. Study on the design, preparation and performance of novel dielectric polymers for organic thin film Transistors[D]. Changchun: Jilin University, 2016: 15-23. (in Chinese)

T F TRANSISTOR , H C LAI , B J TZENG , 等 . Ultra-flexible amorphous indium-gallium-zinc oxide (a-IGZO) . SID Symposium Digest of Technical Papers , 2012 . 43 ( 1 ): 764 - 767 . DOI: 10.1002/j.2168-0159.2012.tb05896.x http://doi.org/10.1002/j.2168-0159.2012.tb05896.x .

乌仁图雅 , 周炳卿 , 高爱明 , 等 . 射频功率对富硅-氮化硅薄膜结构及性质影响 . 人工晶体学报 , 2016 . 45 ( 9 ): 2322 - 2325 . DOI: 10.3969/j.issn.1000-985X.2016.09.027 http://doi.org/10.3969/j.issn.1000-985X.2016.09.027 .

T Y WUREN , B Q ZHOU , A M GAO , 等 . Effect of radio-frequency power on bond structures and properties of silicon-rich silicon nitride thin films . Journal of Synthetic Crystals , 2016 . 45 ( 9 ): 2322 - 2325 . DOI: 10.3969/j.issn.1000-985X.2016.09.027 http://doi.org/10.3969/j.issn.1000-985X.2016.09.027 .

H HUANG , K J WINCHESTER , A SUVOROVA , 等 . Effect of deposition conditions on mechanical properties of low-temperature PECVD silicon nitride films . Materials Science and Engineering: A , 2006 . 435-436 453 - 459 . DOI: 10.1016/j.msea.2006.07.015 http://doi.org/10.1016/j.msea.2006.07.015 .

欧衍聪.PECVD制备多层氮化硅减反膜的工艺研究[D].长沙: 长沙理工大学, 2012. http://cdmd.cnki.com.cn/Article/CDMD-10536-1012347948.htm

OU Y C. Research on preparing of multi-layer nitride silicon antireflection film by PECVD[D]. Changsha: Changsha University of Science & Technology, 2012. (in Chinese)

张化福.TFT栅绝缘层用氮化硅薄膜的研究[D].成都: 电子科技大学, 2005. http://d.wanfangdata.com.cn/Thesis/D444870

ZHANG H F. Study on silicon nitride thin films for TFT gate insulation[D]. Chengdu: University of Electronic Science and Technology of China, 2005. (in Chinese)

刘昊轩.PECVD制备光学薄膜均匀性控制技术研究[D].西安: 西安工业大学, 2014. http://cdmd.cnki.com.cn/Article/CDMD-10702-1014263345.htm

LIU H X. Control technology of uniformity of optical thin films deposited by PECVD[D]. Xi'an: Xi'an Technological University, 2014. (in Chinese)

谢强 , 闫闯 , 朱阳阳 , 等 . 基于复合绝缘层SiN x /PMMA的有机金属-绝缘层-半导体器件 . 发光学报 , 2019 . 40 ( 6 ): 773 - 780 . http://www.wanfangdata.com.cn/details/detail.do?_type=perio&id=fgxb201906010 http://www.wanfangdata.com.cn/details/detail.do?_type=perio&id=fgxb201906010 .

Q XIE , C YAN , Y Y ZHU , 等 . Organic metal-insulator-semiconductor devices based on compound insulation layers of SiN x /PMMA . Chinese Journal of Luminescence , 2019 . 40 ( 6 ): 773 - 780 . http://www.wanfangdata.com.cn/details/detail.do?_type=perio&id=fgxb201906010 http://www.wanfangdata.com.cn/details/detail.do?_type=perio&id=fgxb201906010 .

郭永林 , 梁续旭 , 胡守成 , 等 . Al 2 O 3 薄层修饰SiN x 绝缘层的IGZO-TFTs器件的性能研究 . 发光学报 , 2015 . 36 ( 8 ): 947 - 952 . http://www.wanfangdata.com.cn/details/detail.do?_type=perio&id=fgxb201508015 http://www.wanfangdata.com.cn/details/detail.do?_type=perio&id=fgxb201508015 .

Y L GUO , X X LIANG , S C HU , 等 . Improvement of IGZO-TFTs performance with SiN x gate insulator modified by Al 2 O 3 film . Chinese Journal of Luminescence , 2015 . 36 ( 8 ): 947 - 952 . http://www.wanfangdata.com.cn/details/detail.do?_type=perio&id=fgxb201508015 http://www.wanfangdata.com.cn/details/detail.do?_type=perio&id=fgxb201508015 .

林娟 , 杨培志 , 化麒麟 . 富硅氮化硅薄膜的制备及其光学带隙研究 . 发光学报 , 2012 . ( 6 ): 596 - 600 . http://d.old.wanfangdata.com.cn/Periodical/fgxb201206006 http://d.old.wanfangdata.com.cn/Periodical/fgxb201206006 .

J LIN , P Z YANG , Q L HUA . Preparation and optics band gap characterization of si-rich silicon nitride thin films . Chinese Journal of Luminescence , 2012 . ( 6 ): 596 - 600 . http://d.old.wanfangdata.com.cn/Periodical/fgxb201206006 http://d.old.wanfangdata.com.cn/Periodical/fgxb201206006 .

吴清鑫 , 陈光红 , 于映 , 等 . PECVD法生长氮化硅工艺的研究 . 功能材料 , 2007 . 38 ( 5 ): 703 - 705, 710 . DOI: 10.3321/j.issn:1001-9731.2007.05.005 http://doi.org/10.3321/j.issn:1001-9731.2007.05.005 .

Q X WU , G H CHEN , Y YU , 等 . The study on technology for the silicon nitride thin films by PECVD . Journal of Functional Materials , 2007 . 38 ( 5 ): 703 - 705, 710 . DOI: 10.3321/j.issn:1001-9731.2007.05.005 http://doi.org/10.3321/j.issn:1001-9731.2007.05.005 .

白金超 , 王静 , 赵磊 , 等 . 氮化硅的ECCP刻蚀特性研究 . 液晶与显示 , 2017 . 32 ( 7 ): 533 - 537 . http://yjyxs.com/CN/abstract/abstract10194.shtml http://yjyxs.com/CN/abstract/abstract10194.shtml .

J C BAI , J WANG , L ZHAO , 等 . Etching characteristics of silicon nitride by ECCP . Chinese Journal of Liquid Crystals and Displays , 2017 . 32 ( 7 ): 533 - 537 . http://yjyxs.com/CN/abstract/abstract10194.shtml http://yjyxs.com/CN/abstract/abstract10194.shtml .

姜晓辉 , 田宗民 , 李田生 , 等 . 栅绝缘层过孔的反应离子刻蚀研究 . 真空科学与技术学报 , 2014 . 34 ( 3 ): 278 - 281 . DOI: 10.3969/j.issn.1672-7126.2014.03.16 http://doi.org/10.3969/j.issn.1672-7126.2014.03.16 .

X H JIANG , Z M TIAN , T S LI , 等 . Through holes etched with reactive ion in gate insulation layer . Chinese Journal of Vacuum Science and Technology , 2014 . 34 ( 3 ): 278 - 281 . DOI: 10.3969/j.issn.1672-7126.2014.03.16 http://doi.org/10.3969/j.issn.1672-7126.2014.03.16 .

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