Properties of MoO<sub><italic style="font-style: italic">x</italic></sub> thin films prepared by magnetron sputtering

Xiao-kun WANG; Wei-hua FANG; Fei LIU

doi:10.3788/YJYXS20203503.0211

您当前的位置：

首页 >

文章列表页 >

Properties of MoO_x thin films prepared by magnetron sputtering

Materials and Devices | 更新时间：2020-08-12

- Properties of MoO_x thin films prepared by magnetron sputtering
- Chinese Journal of Liquid Crystals and Displays Vol. 35, Issue 3, Pages: 211-218(2020)
- 作者机构：
  
  合肥京东方光电科技有限公司, 安徽合肥 230012
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20203503.0211
  CLC： TB31;TB34;TB43
- Received：09 September 2019，
  
  Revised：11 November 2019，
  
  Accepted：11 November 2019，
  
  Published：05 March 2020
- 稿件说明：
移动端阅览
Xiao-kun WANG, Wei-hua FANG, Fei LIU. Properties of MoO_x thin films prepared by magnetron sputtering[J]. Chinese journal of liquid crystals and displays, 2020, 35(3): 211-218.
DOI：

Xiao-kun WANG, Wei-hua FANG, Fei LIU. Properties of MoO_x thin films prepared by magnetron sputtering[J]. Chinese journal of liquid crystals and displays, 2020, 35(3): 211-218. DOI： 10.3788/YJYXS20203503.0211.

摘要

MoO

材料因其较低的反射率，在窄边框液晶显示技术等领域是一种理想的材料。本文利用磁控溅射法在玻璃基板上制备MoO

薄膜，并在MoO

薄膜上沉积不同的金属层，采用不同的方法研究MoO

薄膜及其搭配金属层的特性。测试结果表明：MoO

和玻璃基板的粘附性较好，无须打底膜可在玻璃基板上直接沉积；MoO

和Al及Cu的粘附效果优于Mo及MTD等Mo合金；MoO

薄膜的方块电阻值较大，搭配金属层时可忽略不计；MoO

厚度对搭配金属膜的反射率及色差影响很大，而金属层厚度影响较小。对于采用MoO

作低反材料的工艺，可以根据MoO

材料的特性选择搭配不同的金属层，在满足反射率等要求的基础上，可通过调整MoO

层厚度来调整产品的色差，以满足客户的颜色喜好需求。

Abstract

MoO

thin film is considered to be an ideal choice in border-less TFT LCD for its low reflectivity. In this work

MoO

thin films are deposited at room temperature by utilizing magnetron sputtering on glass substrate. The properties of MoO

films

composite films of MoO

and different metal films are studied by different methods. The results show that MoO

film can be deposited on glass substrates without undercoating because of the good adhesion between them. The adhesion of MoO

to Al and Cu is better than that of Mo and Mo alloys

such as MTD. The square resistance of MoO

thin film is large and can be neglected when it is composed with metal layers. The thickness of MoO

has a great influence on the reflectivity of composite films of MoO

and metal film. Different MoO

thicknesses show different colors when it is composed with metal layers while the thickness of metal layer has little effect on color. In the production of border-less TFT LCD

metal layer can be choose according to the properties of MoO

to match with and the color of products can be adjusted by changing the thickness of MoO

layers to meet the color preferences of the customers on the basis of meeting the requirements of reflectivity.

关键词

Keywords

references

毛赣如 , 原小杰 . 等离子体增强CVD氮化硅作硅太阳电池的减反射膜 . 太阳能学报 , 1988 . 9 ( 3 ): 286 - 290 . http://www.cnki.com.cn/Article/CJFDTotal-TYLX198803006.htm http://www.cnki.com.cn/Article/CJFDTotal-TYLX198803006.htm .

G R MAO , X J YUAN . Plasma-enhanced CVD silicon nitride as antireflection coating of silicon solar cells . Acta Energiae Solaris Sinica , 1988 . 9 ( 3 ): 286 - 290 . http://www.cnki.com.cn/Article/CJFDTotal-TYLX198803006.htm http://www.cnki.com.cn/Article/CJFDTotal-TYLX198803006.htm .

刘光友 , 谭兴文 , 姚金才 , 等 . 电化学制备薄黑硅抗反射膜 . 物理学报 , 2008 . 57 ( 1 ): 514 - 518 . DOI: 10.3321/j.issn:1000-3290.2008.01.082 http://doi.org/10.3321/j.issn:1000-3290.2008.01.082 .

G Y LIU , X W TAN , J C YAO , 等 . "Black silicon" antireflection thin film prepared by electrochemical etching . Acta Physica Sinica , 2008 . 57 ( 1 ): 514 - 518 . DOI: 10.3321/j.issn:1000-3290.2008.01.082 http://doi.org/10.3321/j.issn:1000-3290.2008.01.082 .

仲正中 , ABILEAH A , HOGAN J P , 等 . 彩色TFT-LCD用超低反射有机黑矩阵 . 现代显示 , 1998 . ( 4 ): 4 - 10 . http://www.cqvip.com/Main/Detail.aspx?id=3376752 http://www.cqvip.com/Main/Detail.aspx?id=3376752 .

ZZ ZHONG , A ABILEAH , J P HOGAN , 等 . Ultra-low reflectance organic black matrix for color TFT-LCDs . Advanced Display , 1998 . ( 4 ): 4 - 10 . http://www.cqvip.com/Main/Detail.aspx?id=3376752 http://www.cqvip.com/Main/Detail.aspx?id=3376752 .

张一文 , 王品红 , 廖柯 . 超辐射发光二极管抗反射膜的设计 . 光学与光电技术 , 2005 . 3 ( 6 ): 32 - 34 . DOI: 10.3969/j.issn.1672-3392.2005.06.010 http://doi.org/10.3969/j.issn.1672-3392.2005.06.010 .

Y W ZHANG , P H WANG , K LIAO . Design of antireflection coating for superluminescent diodes . Optics & Optoelectronic Technology , 2005 . 3 ( 6 ): 32 - 34 . DOI: 10.3969/j.issn.1672-3392.2005.06.010 http://doi.org/10.3969/j.issn.1672-3392.2005.06.010 .

顾铁儿 , 鲁毅伟 , 仲正中 , 等 . 航空电子设备用低反射高透射宽视角TFT-LCD . 现代显示 , 1998 . ( 4 ): 37 - 45 . http://www.cqvip.com/Main/Detail.aspx?id=3376756 http://www.cqvip.com/Main/Detail.aspx?id=3376756 .

T E GU , Y W LU , Z Z ZHONG , 等 . Low reflection, high transmission, wide viewing angle TFT-LCD for avionics applications . Advanced Display , 1998 . ( 4 ): 37 - 45 . http://www.cqvip.com/Main/Detail.aspx?id=3376756 http://www.cqvip.com/Main/Detail.aspx?id=3376756 .

陈帅 , 陈卓 , 李乃升 , 等 . 对液晶显示窄边框专利技术的研究 . 中国新技术新产品 , 2018 . ( 9 ): 5 - 6 . http://d.old.wanfangdata.com.cn/Periodical/spyzl201714234 http://d.old.wanfangdata.com.cn/Periodical/spyzl201714234 .

S CHEN , Z CHEN , N S LI , 等 . Study on patent technology of borderless LCD . New Technology & New Products of China , 2018 . 9 5 - 6 . http://d.old.wanfangdata.com.cn/Periodical/spyzl201714234 http://d.old.wanfangdata.com.cn/Periodical/spyzl201714234 .

李冰乔 . 浅谈窄边框液晶显示技术的现状与发展前景 . 电子测试 , 2019 . ( 8 ): 130 - 131, 88 . DOI: 10.3969/j.issn.1000-8519.2019.08.056 http://doi.org/10.3969/j.issn.1000-8519.2019.08.056 .

B Q LI . The present situation and development prospect of narrow frame liquid crystal display technology . Electronic Test , 2019 . ( 8 ): 130 - 131, 88 . DOI: 10.3969/j.issn.1000-8519.2019.08.056 http://doi.org/10.3969/j.issn.1000-8519.2019.08.056 .

H SCHMIDT , K HARALD , K JUDITH , 等 . Sputtered molybdenum-oxide for anti-reflection layers in displays: optical properties and thermal stability . SID Symposium Digest of Technical Papers , 2018 . 49 ( 1 ): 225 - 229 . DOI: 10.1002/sdtp.12531 http://doi.org/10.1002/sdtp.12531 .

X X ZHANG , Y Z SONG , X Q DING , 等 . Low reflectivity material development for border‐less LCD product . SID Symposium Digest of Technical Papers , 2019 . 50 ( 1 ): 1851 - 1853 . DOI: 10.1002/sdtp.13320 http://doi.org/10.1002/sdtp.13320 .

高荣荣 , 刘俊豪 , 周保全 , 等 . 摩擦Mura机理和设计改善方法 . 液晶与显示 , 2019 . 34 ( 6 ): 570 - 575 . http://yjyxs.com/CN/abstract/abstract10479.shtml http://yjyxs.com/CN/abstract/abstract10479.shtml .

R R GAO , J H LIU , B Q ZHOU , 等 . Mechanism and design improvement on rubbing Mura . Chinese Journal of Liquid Crystals and Displays , 2019 . 34 ( 6 ): 570 - 575 . http://yjyxs.com/CN/abstract/abstract10479.shtml http://yjyxs.com/CN/abstract/abstract10479.shtml .

周伟敏 , 周平南 , 吴廷斌 , 等 . NiTi薄膜残余应力测试方法的探讨 . 实验室研究与探索 , 2007 . 26 ( 1 ): 16 - 18 . DOI: 10.3969/j.issn.1006-7167.2007.01.005 http://doi.org/10.3969/j.issn.1006-7167.2007.01.005 .

W M ZHOU , P N ZHOU , T B WU . The residual stress study of NiTi Thin films by nanoindentation . Research and Exploration in Laboratory , 2007 . 26 ( 1 ): 16 - 18 . DOI: 10.3969/j.issn.1006-7167.2007.01.005 http://doi.org/10.3969/j.issn.1006-7167.2007.01.005 .

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Effect of oxygen to argon ratio on the electrical performance of Ta₂O₅ gate dielectric thin film transistor

Effect of annealing treatment on the performances of 40 nm thick p-ITO films prepared by DC magnetron sputtering

Effect of pretreatment of tray on hillock formation in pure Al films

Analysis and improvement of a larger size TFT-LCD block mura

Ag/Ti source/drain electrodes for amorphous InGaZnO thin flim transistors

Related Author

Xiao-tian YANG

Han-yue ZHANG

Fan YANG

Fu-nan LIU

Chao WANG

Xiang-xiu PIAO

Lei MENG

Liang XIAO

Related Institution

Jilin Normal University

Key Laboratory for Comprehensive Energy Saving of Cold Regions Architecture of Ministry of Education, Jilin Jianzhu University

Jilin Provincial Key Laboratory of Architectural Electricity & Comprehensive Energy Saving, School of Electrical Engineering and Computer Science, Jilin Jianzhu University

Hefei BOE Optoelectronics Technology Co., Ltd

Fuzhou BOE Optoelectronics Technology Co., Ltd.

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China 130033 Postal code：130033
Tel：0431-86176059 Email：yjxs@ciomp.ac.cn
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰

Properties of MoOx thin films prepared by magnetron sputtering

DOI：10.3788/YJYXS20203503.0211

摘要

Abstract

关键词

Keywords

references

Properties of MoO_x thin films prepared by magnetron sputtering