Role of BCl<sub>3</sub> gas in Ti/Al/Ti dry etching process

Soon-dong LEE; Ji-Hoon LEE; Bing CHEN; Jie LIU; Guo-te WU; Zhan-cheng MIAO

doi:10.3788/YJYXS20193409.0857

您当前的位置：

首页 >

文章列表页 >

Role of BCl₃ gas in Ti/Al/Ti dry etching process

Materials and Devices | 更新时间：2020-07-05

- Role of BCl₃ gas in Ti/Al/Ti dry etching process
- Chinese Journal of Liquid Crystals and Displays Vol. 34, Issue 9, Pages: 857-861(2019)
- 作者机构：
  
  重庆京东方显示技术有限公司, 重庆 400714
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20193409.0857
  CLC： TN321.5
- Received：23 November 2018，
  
  Accepted：29 May 2019，
  
  Published：05 September 2019
- 稿件说明：
移动端阅览
Soon-dong LEE, Ji-Hoon LEE, Bing CHEN, et al. Role of BCl₃ gas in Ti/Al/Ti dry etching process[J]. Chinese journal of liquid crystals and displays, 2019, 34(9): 857-861.
DOI：

Soon-dong LEE, Ji-Hoon LEE, Bing CHEN, et al. Role of BCl₃ gas in Ti/Al/Ti dry etching process[J]. Chinese journal of liquid crystals and displays, 2019, 34(9): 857-861. DOI： 10.3788/YJYXS20193409.0857.

摘要

随着显示技术的发展，Ti/Al/Ti材料需求的厚度越来越厚，布线越来越窄。目前LTPS显示技术中常规的设计为Ti/Al/Ti材料衬底使用无机膜，后续柔性OLED显示技术新设计中Ti/Al/Ti衬底开始逐渐使用有机膜（聚酰亚胺等），Ti/Al/Ti干法刻蚀工艺面临的挑战越来越大。本文主要研究在常规Ti/Al/Ti干法刻蚀工艺中，BCl

气体对Ti/Al/Ti侧面形态的影响以及对光刻胶刻蚀速率的影响，实验结果表明：随着BCl

气体流量的增加，Ti/Al/Ti侧面保护膜的厚度越来越薄，对PR胶的刻蚀速率越来越小。本文研究结果便于更好地应对后续Ti/Al/Ti干法刻蚀衬底为有机膜的新工艺。

Abstract

With the development of display technology

the thickness of Ti/Al/Ti materials becomes thicker and the wiring becomes narrower and narrower. At present

the conventional design of LTPS display technology is to use inorganic film on Ti/Al/Ti substrates. In the new design of flexible OLED display technology

Ti/Al/Ti substrates are gradually using organic film. The challenge of Ti/Al/Ti dry etching process is becoming more and more serious. In this paper

the effect of BCl

gas on the side morphology of Ti/Al/Ti and the etching rate of photo resist in conventional Ti/Al/Ti dry etching process is studied. With the increase of BCl

gas flow rate

the thickness of Ti/Al/Ti side protective film is thinner and thinner

and the etching rate of photo resist is smaller and smaller. Based on the research and analysis

it is easy to cope with the new process of dry etching Ti/Al/Ti substrates as organic films.

关键词

Keywords

references

DONELAN J.综述: 低温多晶硅技术[J].张晓晋, 译.现代显示, 2010(10): 5-7.

DONELAN J. Overview: low-temperature polysilicon[J]. ZHANG X J , trans . Advanced Display , 2010(10): 5-7. (in Chinese)

黄锡珉.显示技术新进展[J].液晶与显示, 2000, 15(1):1-5.

HUANG X M.New development of display technology[J]. Chinese Journal of Liquid Crystals and Displays , 2000, 15(1): 1-5. (in Chinese)

宋颖娉, 郭霞, 艾伟伟, 等.Cl 2 /BCl 3 ICP刻蚀GaN基LED的规律研究[J].微纳电子技术, 2006, 43(3):125-129.

SONG Y P, GUO X, AI W W, et al . Study on the ICP etching regularity of GaN-Based LED with Cl 2 /BCl 3 [J]. Micronanoelectronic Technology , 2006, 43(3): 125-129. (in Chinese)

刘焕新.去除光刻胶残留及刻蚀反应物颗粒的方法: 中国, CN101727025A[P].2010-06-09.

LIU H X. Removal of residual photo resist and etching rea ctor particles: China, CN101727025A[P].2010-06-09.

陈亮, 亢勇, 朱龙源, 等.Cl 2 /Ar/BCl 3 ICP刻蚀AlGaN的研究[C]//第十届全国敏感元件与传感器学术会议论文集.北京: 全国敏感元件与传感器学术团体联合组织委员会, 2007.

CHEN L, KANG Y, ZHU L Y, et al . Study of ICP Etching of AlGaN with Cl 2 /Ar/BCl 3 [C]// Beijing: National Joint Organizing Committee of Academic Group of Sensors and Sensors, 2007. (in Chinese)

李雅飞, 李晓良, 马英杰, 等.ICP刻蚀对光刻胶掩模及刻蚀图形侧壁的影响[J].半导体光电, 2018, 39(2):216-220.

LIY F, LI X L, MA Y J, et al . Effect of ICP etching on the photoresist mask and the sidewall of the etching figure[J]. Semiconductor Optoelectronics , 2018, 39(2): 216-220. (in Chinese)

姜晓辉, 张家祥, 王亮, 等.FFS产品树脂材料结构ITO刻蚀技术研究[J].液晶与显示, 2013, 28(2):194-198.

JIANG X H, ZHANG J X, WANG L, et al . ITO etching in FFS structure with resin material[J]. Chinese Journal of Liquid Crystals and Displays , 2013, 28(2): 194-198. (in Chinese)

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Process optimization based on products of pixel top design

Improvement of photoresist abnormal degeneration in inductively coupled plasma etch

Influence of different dry etching process of contact hole on TFT-LCD performance

Improvement of flicker TFT-LCD by dry etching process

Effects of PR Ashing in Process of Enhanced Capacitive Coupled Plasma Etch

Related Author

Bin-bin CAO

Fang-fang LI

Hui AN

Cheng-zhi YE

Fa-jie LI

Zeng-qian Yang

Jun-lin PENG

Yao-yao FENG

Related Institution

HeFei XinSheng Optoelectronics Technology Co., Ltd.

HeFeiXinSheng Optoelectronics Technology Co., Ltd

Ordos Yuansheng Optoelectronics Co. Ltd.

Fuzhou BOE Optoelectronics Technology Co., Ltd

Beijing BOE Display Technology Co.

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China 130033 Postal code：130033
Tel：0431-86176059 Email：yjxs@ciomp.ac.cn
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰

Role of BCl3 gas in Ti/Al/Ti dry etching process

DOI：10.3788/YJYXS20193409.0857

摘要

Abstract

关键词

Keywords

references

Role of BCl₃ gas in Ti/Al/Ti dry etching process