Application of laser chemical vapor deposition in repairing TFT-LCD circuit defects

Wei ZHANG; Xiao-ying CHEN; Yong-sheng MA; Wan-xia FU; Lei WANG; He ZHOU; Zhi-jun XU; Bo Wang; Yi-song RUAN

doi:10.3788/YJYXS20193408.0755

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Application of laser chemical vapor deposition in repairing TFT-LCD circuit defects

Materials and Devices | 更新时间：2020-12-14

- Application of laser chemical vapor deposition in repairing TFT-LCD circuit defects
- Chinese Journal of Liquid Crystals and Displays Vol. 34, Issue 8, Pages: 755-763(2019)
- 作者机构：
  
  1.福州京东方光电科技有限公司, 福建福州 350300
  2.北京京东方传感技术有限公司, 北京 100176
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20193408.0755
  CLC： TN873.93
- Received：03 April 2019，
  
  Accepted：09 May 2019，
  
  Published：05 August 2019
- 稿件说明：
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Wei ZHANG, Xiao-ying CHEN, Yong-sheng MA, et al. Application of laser chemical vapor deposition in repairing TFT-LCD circuit defects[J]. Chinese journal of liquid crystals and displays, 2019, 34(8): 755-763.
DOI：

Wei ZHANG, Xiao-ying CHEN, Yong-sheng MA, et al. Application of laser chemical vapor deposition in repairing TFT-LCD circuit defects[J]. Chinese journal of liquid crystals and displays, 2019, 34(8): 755-763. DOI： 10.3788/YJYXS20193408.0755.

摘要

为了维修TFT-LCD电路缺陷，利用激光化学气相沉积法（LCVD）沉积钨薄膜，讨论成膜参数对基底损伤、钨薄膜电阻率的影响。在空气氛围下，波长为351 nm的脉冲激光诱导W（CO）

裂解成膜，通过聚焦离子束-扫描电子显微镜（FIB-SEM）观察薄膜横截面研究成膜参数对基底损伤的影响，再用高精度的电参数测试仪（EPM）测试不同参数下钨薄膜电阻。控制变量法表明，激光功率或激光束光斑尺寸越大，薄膜基底损伤越大，但电阻率越小，且不沉积薄膜时高功率激光辐射也不会造成基底损伤；激光辐射速度越大，基底损伤越小，但电阻率越大。通过平衡工艺参数，得到了电阻率为0.96 Ω/μm、对基底无损伤的钨薄膜，成分分析表明此时W（CO）

已经完全裂解。

Abstract

The deposition of tungsten film through laser chemical vapor deposition (LCVD) was investigated for the repair of circuit defects of TFT-LCD panels

simultaneously the film-forming process parameters influencing the damage of thin film transistor substrate

electrical resistance of tungsten film were discussed. Firstly

the pulsed laser irradiation at 351 nm was used to deposit tungsten from W(CO)

in air atmosphere

and the damage of thin film transistor substrate at diverse film-forming process parameters were observed through focused ion beam-scanning electron microscope (FIB-SEM). Then

the electrical resistances of tungsten films at various film-forming process parameters were tested by high-accuracy Electrical parameter tester (EPM). The control variable method experiments indicate that the larger laser power or bigger size of slit placed in the beam path lead to more serious substrate damage but lower electrical resistivity

and high-power laser radiation without tungsten film deposition can't cause substrate damage; greater laser scan speed result in less substrate damage but higher resistivity by maintaining other effect factors constant. The lower resistivity (0.96 Ω/μm) and good surface morphology tungsten film is obtained without damage of the thin film transistor substrate at balanced condition

and component analysis shows that W(CO)

are complete decomposed.

关键词

Keywords

references

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