ESD related defects analysis and improvement design solution in TFT-LCD rubbing process

Guo-lei WANG; Peng CHEN; Heng-bin LI; Jing-peng WANG; Hua-kun DU; Li MA; Hong-hua SONG; Yong-hui WANG; Yi-dian ZHANG; Ning LI

doi:10.3788/YJYXS20193408.0733

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ESD related defects analysis and improvement design solution in TFT-LCD rubbing process

Materials and Devices | 更新时间：2020-12-14

- ESD related defects analysis and improvement design solution in TFT-LCD rubbing process
- Chinese Journal of Liquid Crystals and Displays Vol. 34, Issue 8, Pages: 733-738(2019)
- 作者机构：
  
  合肥鑫晟光电科技有限公司, 安徽合肥, 230012
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20193408.0733
  CLC： TN141.9
- Received：26 March 2019，
  
  Accepted：08 May 2019，
  
  Published：05 August 2019
- 稿件说明：
移动端阅览
Guo-lei WANG, Peng CHEN, Heng-bin LI, et al. ESD related defects analysis and improvement design solution in TFT-LCD rubbing process[J]. Chinese journal of liquid crystals and displays, 2019, 34(8): 733-738.
DOI：

Guo-lei WANG, Peng CHEN, Heng-bin LI, et al. ESD related defects analysis and improvement design solution in TFT-LCD rubbing process[J]. Chinese journal of liquid crystals and displays, 2019, 34(8): 733-738. DOI： 10.3788/YJYXS20193408.0733.

摘要

本文对摩擦工艺过程中的线不良进行了分析，通过切割验证、设计方案变更验证了降低ESD风险的两个方向。通过实际的验证结果分析发现，减小填充图形的面积或者将填充图形连接到公共电极，同时搭配填充图形到信号线的距离增加到大于60 μm，可以大大降低静电放电发生的概率，不良率由20%降低到0%。结果充分表明，此设计方案可应用于实际产品设计中以降低摩擦工艺过程中的ESD风险。

Abstract

In this paper

the line defects in the TFT-LCD rubbing process are analyzed

and the two directions of reducing ESD(Electro Static Discharge) risk are verified by cutting verification and design change. Through the analysis of the actual verification results

it is found that reducing the area of the Dummy pattern or connecting the dummy pattern to

com

and improving the distance from the Dummy pattern to the signal line above 60 μm

can greatly reduce the probability of ESD occurrence

and the defect ratio is reduced from 20% to 0%. The results fully demonstrate that this design can be applied to the actual product design to reduce the ESD risk during the rubbing process.

关键词

Keywords

references

李卿硕, 吴倩, 王莎.液晶模组ESD失效分析及防护研究[J].液晶与示, 2013, 28(5):711-715.

LI Q S, WU Q, WANG S. TFT-LCD module ESD failure analysis and protection research[J]. Chinese Journal of Liquid Crystals and Displays , 2013, 28(5):711-715. (in Chinese)

车春城, 王丹, 李军建. TFT-LCD取向层工艺及其关键参数[J].现代显示, 2006(9):20-23, 12.

CHE C C, WANG D, LI J J. TFT-LCD's oriented layer technology and it's key parameters[J]. Advanced Display , 2006(9):20-23, 12. (in Chinese)

彭志龙, 王威.关于TFT-LCD工艺过程中ESD改善的研究[J].现代显示, 2006(9):24-26.

PENG Z L, WANG W. The research about ESD improvement in TFT-LCD process[J]. Advanced Display , 2006(9):24-26. (in Chinese)

高文宝. TFT-LCD静电防止回路模拟与设计[J].液晶与显示, 2007, 22(5):611-616.

GAO W B. ESD design and PSpice simulation for TFT-LCD[J]. Chinese Journal of Liquid Crystals and Displays , 2007, 22(5):611-616. (in Chinese)

LAI H C, DEN THOMAS K, HORSTEMEYTER R, et al . Electrostatic discharge guide and liquid crystal display utilizing same: USA, US2005/0180072A1[P]. 2005-08-18.

TSAO C H, BACON T. Electrostatic discharge protection circuit and method of electrostatic discharge protection: USA, US2006/0119757A1[P]. 2006-06-08.

LEE H K, KIM Y G, CHUNG J S. Protection circuit and method from electrostatic discharge of TFT-LCD: US, 20030020845[P]. 2003-01-30.

李欣欣, 龙春平, 王威. TFT-LCD工艺与静电击穿[J].现代显示, 2007, 18(3):59-63.

LI X X, LONG C P, WANG W. TFT-LCD process and ESD[J]. Advanced Display , 2007, 18(3):59-63. (in Chinese)

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