Research of Emboss Mura

Jin-chao BAI; Xun WANG; Zu-mou WU; Xiang-qian DING; Xiang-meng ZHANG; Xiao-long LI; Tian-yu ZUO; Yong-zhi SONG; Wei-tao CHEN

doi:10.3788/YJYXS20193403.0273

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Research of Emboss Mura

Materials and Devices | 更新时间：2020-07-05

- Research of Emboss Mura
- Chinese Journal of Liquid Crystals and Displays Vol. 34, Issue 3, Pages: 273-277(2019)
- 作者机构：
  
  北京京东方显示技术有限公司, 北京 100176
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20193403.0273
  CLC： TN141.9
- Received：11 September 2018，
  
  Accepted：24 December 2018，
  
  Published：2019-03
- 稿件说明：
移动端阅览
Jin-chao BAI, Xun WANG, Zu-mou WU, et al. Research of Emboss Mura[J]. Chinese journal of liquid crystals and displays, 2019, 34(3): 273-277.
DOI：

Jin-chao BAI, Xun WANG, Zu-mou WU, et al. Research of Emboss Mura[J]. Chinese journal of liquid crystals and displays, 2019, 34(3): 273-277. DOI： 10.3788/YJYXS20193403.0273.

摘要

针对网状斑点（Emboss Mura）不良现象进行系统研究，确定不良发生的机理，并找到有效的改善措施。首先通过半导体参数测试设备和改变电压、频率等方法测试Mura电学特性，然后采用扫描电子显微镜、椭偏仪对栅极绝缘层进行测量，最后采用扫描电子显微镜、X射线电子能谱对玻璃基板背面Mura形貌和成分进行测试，对Mura产生的原因提出合理的解释，并给出有效的改善措施。结果表明，Emboss Mura是干刻反应腔下部电极的阵列凸起划伤玻璃基板背面和凸起碎屑粘附在划伤处形成的。通过更改电极凸起的形状、结构、材质以及下部电极清洁方式、优化电极温度、增加PI膜厚等方式可以极大降低不良的发生率。

Abstract

The Emboss Mura is investigated systematically

the mechanism is found

and the effective measures to improve Emboss Mura are established. Firstly

electrical properties of Mura were tested by means of semiconductor parameter testing equipment and changing voltage and frequency. Then

the gate insulator properties were confirmed by scanning electron microscopy (SEM) and ellipsometer. Finally

Mura morphology and composition on the back of glass substrate were tested by SEM and X-ray photoelectron (EDS)

and a reasonable explanation for the causes of Mura is given

effective improvement measures are put forward. The results show that Emboss Mura is formed by scratching the back of the glass on the bottom electrode emboss and sticking the scratches with the scratch debris. By changing the shape

structure and material of bottom electrode emboss

cleaning bottom electrode

optimizing electrode temperature and increasing PI film thickness

Emboss Mura ratio can be greatly reduced.

关键词

Keywords

references

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