Novel integrated gate driver design based on a-IGZO TFTs

Hong-xia XU; Zong-fei ZOU; Cheng-yuan DONG

doi:10.3788/YJYXS20183312.0996

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Novel integrated gate driver design based on a-IGZO TFTs

Material and Device | 更新时间：2020-08-12

- Novel integrated gate driver design based on a-IGZO TFTs
- Chinese Journal of Liquid Crystals and Displays Vol. 33, Issue 12, Pages: 996-1001(2018)
- 作者机构：
  
  1.上海交通大学, 上海 200240
  2.昆山龙腾光电有限公司, 江苏昆山 215301
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20183312.0996
  CLC： TP394.1;TH691.9
- Received：17 June 2018，
  
  Accepted：09 August 2018，
  
  Published：2018-12
- 稿件说明：
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Hong-xia XU, Zong-fei ZOU, Cheng-yuan DONG. Novel integrated gate driver design based on a-IGZO TFTs[J]. Chinese journal of liquid crystals and displays, 2018, 33(12): 996-1001.
DOI：

Hong-xia XU, Zong-fei ZOU, Cheng-yuan DONG. Novel integrated gate driver design based on a-IGZO TFTs[J]. Chinese journal of liquid crystals and displays, 2018, 33(12): 996-1001. DOI： 10.3788/YJYXS20183312.0996.

摘要

在传统集成栅驱动电路中采用非晶InGaZnO薄膜晶体管（a-IGZO TFT）后会造成信赖性的降低，经过分析确定原因为驱动TFT阈值电压漂移。本文提出了一种改进的集成栅驱动电路，通过对驱动TFT栅节点电压的稳定控制，获得了较大的驱动TFT阈值电压漂移冗余度（从原来的不到±-3 V扩大到±-9 V），克服了a-IGZO TFT阈值电压漂移所造成的电路失效，稳定了集成栅驱动电路并延长了液晶显示器面板的寿命。

Abstract

Reliability of conventional integrated gate driver decreased with amorphous InGaZnO thin film transistors (a-IGZO TFTs) employed

which is assumed to result from the threshold voltage shift. Accordingly

An improved integrated gate circuit was proposed

which exhibited larger redundancy for the threshold voltage shift by controlling the Q-point voltage stability of driver TFTs. It prevented the circuit failure due to threshold voltage shift(

shift margin enlarged from less than ±-3 V to ±-9 V)

made integrated gate driver more stable

and led to longer life of liquid crystal display panels.

关键词

Keywords

references

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