Fabrication of high-reliability Cu BCE-structure IGZO TFTs

Xiao WANG; Shi-min GE; Shan LI

doi:10.3788/YJYXS20183311.0925

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Fabrication of high-reliability Cu BCE-structure IGZO TFTs

Material and Device | 更新时间：2020-08-12

- Fabrication of high-reliability Cu BCE-structure IGZO TFTs
- Chinese Journal of Liquid Crystals and Displays Vol. 33, Issue 11, Pages: 925-930(2018)
- 作者机构：
  
  1.陕西科技大学电气与信息工程学院, 陕西西安 710049
  2.深圳华星光电半导体显示技术有限公司, 广东深圳 518132
- 作者简介：
  
  [ "王晓(1989-), 男, 山东泰安人, 博士, 主要从事半导体物理与器件方面的研究。E-mail:740349258@qq.com" ]
- 基金信息：
- DOI：10.3788/YJYXS20183311.0925
  CLC： TN141.9
- Received：07 April 2018，
  
  Accepted：15 July 2018，
  
  Published：05 November 2018
- 稿件说明：
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Xiao WANG, Shi-min GE, Shan LI. Fabrication of high-reliability Cu BCE-structure IGZO TFTs[J]. Chinese journal of liquid crystals and displays, 2018, 33(11): 925-930.
DOI：

Xiao WANG, Shi-min GE, Shan LI. Fabrication of high-reliability Cu BCE-structure IGZO TFTs[J]. Chinese journal of liquid crystals and displays, 2018, 33(11): 925-930. DOI： 10.3788/YJYXS20183311.0925.

摘要

背沟道刻蚀型（BCE）非晶氧化铟镓锌薄膜晶体管（a-IGZO TFT）具有工艺简单、寄生电容小以及开口率高等优点，但BCE IGZO器件背沟道易受酸液和等离子体损伤，进而引起TFT均匀性和稳定性等方面问题，随着GOA技术的导入，对TFT器件电学性能的均匀性和稳定性提升的要求也日益迫切，因此开发高信赖性BCE IGZO TFT是技术和市场的迫切要求。本文主要分析了基于IGZO的背沟道刻蚀型薄膜晶体管电学性质，通过优化钝化层材料，色阻材料以及GOA TFT结构等削弱因背沟道水汽吸附引起的器件劣化，偏压温度应力测试结果显示优化后的TFT展现了良好的稳定性——在80℃，栅极30 V负向偏压条件下，2 000 s的Δ

小于1 V。最终，利用优化的IGZO TFT制作了215.9 mm（85 in）8K4K 120 Hz液晶显示器。

Abstract

Back channel etched (BCE) amorphous InGaZnO (a-IGZO) can be fabricated with fewer photolithography masks and achieve smaller parasitic capacitance. However

the back channel of the BCE a-IGZO TFT is vulnerable to acid and plasma damage

which leads to problems of TFT uniformity and stability. In particular

with the introduction of gate driver on array (GOA) technology

it is increasingly urgent to improve the electrical uniformity and stability of TFTs. Therefore

it is an urgent requirement for technology and market to develop high reliability BCE IGZO TFTs. The electrical characteristic of the BCE configuration based a-IGZO TFTs were studied. The passivation layer

the selection of color filter material and design of GOA TFT structure were modified for lessening the influence of H

O molecules adsorbing on the back channel of the BCE-structure. The negative and positive bias temperature stress(N/PBTS) results revealed that the optimized GOA TFTs exhibited good device reliability-the

shift under gate voltage of -30 V at 80℃ is less than 1 V for 2 000 s. Finally

a high performance 215.9 mm(85 in) 8K4K 120 Hz GOA LCD was demonstrated.

关键词

Keywords

references

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Fabrication of high-reliability Cu BCE-structure IGZO TFTs

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Related Institution

陕西科技大学电气与信息工程学院

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