Novel organic field-effect transistor (OFET) devices with drain-source-gate (D-S-G) coplanar configuration are fabricated by using E7 liquid crystal as a gate insulator and PⅡ-TVT as active layer
through typical photolithography/etching processes
in order to prepare an OFET with liquid crystal as the gate insulator. The transistor performance was measured and experimental results indicated that the device showed some special untypical transistor performance with
I
on
/
I
off
could be up to 10
3
.From optical microscope images
it was observed that the liquid crystal was deformed upon the applied gate voltage
which manifested that the gate voltage has a greater impact on the alignment of the liquid crystal molecules. When the pulse gate voltage is applied
the channel current increase with the time of pulse gate voltage. Therefore
the polarization and relaxation of liquid crystal molecules under the electric field partially simulate the spike-time-dependent plasticity of synapse.
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