TFT-LCD manufacture technology metal or metal composite film layer profile

Xue-li FAN; Rui-kuan JING; Yan-ming WANG; Teng JIN; Jian-jie DONG; Yong-chang XU; Bin XU; Zhi-xing Zhang; Kuang GAO

doi:10.3788/YJYXS20183303.0208

您当前的位置：

首页 >

文章列表页 >

TFT-LCD manufacture technology metal or metal composite film layer profile

Material and Device | 更新时间：2020-07-06

- TFT-LCD manufacture technology metal or metal composite film layer profile
- Chinese Journal of Liquid Crystals and Displays Vol. 33, Issue 3, Pages: 208-212(2018)
- 作者机构：
  
  1.北京京东方光电科技有限公司, 北京 100176
  2.北京京东方显示技术有限公司, 北京 100176
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20183303.0208
  CLC： TN141.9
- Received：19 May 2017，
  
  Accepted：08 November 2017，
  
  Published：05 March 2018
- 稿件说明：
移动端阅览
Xue-li FAN, Rui-kuan JING, Yan-ming WANG, et al. TFT-LCD manufacture technology metal or metal composite film layer profile[J]. Chinese journal of liquid crystals and displays, 2018, 33(3): 208-212.
DOI：

Xue-li FAN, Rui-kuan JING, Yan-ming WANG, et al. TFT-LCD manufacture technology metal or metal composite film layer profile[J]. Chinese journal of liquid crystals and displays, 2018, 33(3): 208-212. DOI： 10.3788/YJYXS20183303.0208.

摘要

在薄膜晶体管液晶显示器（TFT-LCD）面板制程中，Gate层（栅极）电路和SD层（源极）电路根据产品电阻等要求可以使用纯金属膜层，如钼、铜等金属膜层，也可以使用金属复合膜层，如铝钼、铝钕钼、钼铝钼等金属复合膜层。当使用不同金属或金属复合膜层作为Gate、SD电路时，应当对应不同的刻蚀液。但在实际生产时，往往是一种刻蚀液同时对应金属膜层或金属复合膜层。由于钼金属膜层的Etch Rate（刻蚀速率）大于铝钼等金属复合膜层Etch Rate，所以当铝钼等金属复合膜层刻蚀完成后对应坡度角有时会存在异常，如膜层角度较大（80~90°）、顶层金属钼发生尖角或缩进等现象，产生宏观不良及进行后工序时会产生相应的光学不良或导致后层物质残留，影响产品品质。本文针对金属膜层或金属复合膜层坡度角进行影响因素分析，主要受刻蚀工序及曝光工序影响。通过对刻蚀液浓度调整、温度调整、刻蚀方式调整及曝光工序等调整减少金属钼发生尖角、缩进几率，将金属膜层坡度角控制在60°左右及金属复合膜层坡度角控制在50°左右，从而降低不良的发生率，提高产品品质。

Abstract

In the thin film transistor liquid crystal display (TFT-LCD) panel process

Gate(grid) layer and SD layer (source) circuit can use pure metal film layers according to the product requirements

such as molybdenum

copper and other metal film

can also use metal composite film layers such as aluminum molybdenum

aluminum neodymium molybdenum

molybdenum aluminum molybdenum metal composite film. When different metal or metal composite layers are used as Gate and SD circuits

different etchant should be applied. But in actual production

it is often an etchant which corresponds to the metal film layers or metal composite film layers. The molybdenum metal film layers etch rate is larger than the aluminum molybdenum composite film layers etch rate. When the aluminum molybdenum composite film etching complete

the profile is abnormal sometimes

such as film larger angle (80~90°)

top metal occurs tip or shrink phenomenon. When the macro defect occurs and the subsequent process will produce the corresponding optical defects or lead to residual material in the rear layer and affect the quality of products. In this paper

the factors affecting the profile of metal film layers or metal composite film layers are mainly affected by the etching process and exposure process. Through adjusting the etchant concentration

temperature

etching mode and exposure step to adjust the angle

the metal molybdenum occurrence probability of the metal film indentation is reduced

the slope angle of the metal film is controlled at 60°

and the metal composite film slope angle is controlled at 50° so as to reduce the bad incidence and improve the product quality.

关键词

Keywords

references

王伟, 向东, 杨为, 等.湿法刻蚀腔室结构数值优化[J].人工晶体学报, 2014, 43(5):1110-1114.

WANG W, XIANG D, YANG W, et al. Numerical optimization of a chamber structure design for the wet etching[J]. Journal of Synthetic Crystals, 2014, 43(5):110-1114. (in Chinese)

荀本鹏. 大尺寸面板液晶显示屏阵列工艺中的金属钼刻蚀研究[D]. 成都: 电子科技大学, 2007: 62-70.

XUN BP. Large size liquid crystal display panel array of molybdenum metal etching research [D]. Chengdu: University of Electronic Science and Technology of China, 2007: 62-70. (in Chinese)

谷至华.薄膜晶体管(TFT)阵列制造技术[M].上海:复旦大学出版社, 2007.

GU Z H. Thin Film Transistor (TFT) Array Manufacturing Technology[M]. Shanghai:Fudan University Press, 2007. (in Chinese)

剧永波, 陈建军, 张宸铭, 等. LTPS工艺中光刻胶与膜层粘附力的研究[J].液晶与显示, 2017, 32(3):190-195.

JU Y B, CHEN J J, ZHANG C M, et al. Photoresist and film adhesive force in LTPS process[J]. Chinese Journal of Liquid Crystals and Displays, 2017, 32(3):190-195. (in Chinese)

毕昕. 面向TFT-LCD制程的Mura缺陷机器视觉检测方法研究[D]. 上海: 上海交通大学, 2009.

BI X. Study on the methods of machine vision inspection for the Mura defect of TFT-LCD process [D]. Shanghai: Shanghai Jiao Tong University, 2009. (in Chinese)

翟莲娜, 周化岚, 李小慧, 等.氧化铟锡透明导电电极的刻蚀研究[J].腐蚀科学与防护技术, 2014, 26(1):41-44.

ZHAI L N, ZHOU H L, LI X H, et al. Etching of transparent and conductive indium tin oxide films[J]. Corrosion Science and Protection Technology, 2014, 26(1):41-44. (in Chinese)

胡宇峰, 李冠明, 吴为敬, 等.二次耦合直流输出的金属氧化物TFT行驱动电路[J].发光学报, 2016, 37(10):1223-1229.

HU Y F, LI G M, WU W J, et al. Gate driver integrated by MOTFTs using twice-bootstrap DC output module[J]. Chinese Journal of Luminescence, 2016, 37(10):1223-1229. (in Chinese)

刘翔, 陈旭, 谢振宇, 等.使用低电阻金属铝制造薄膜晶体管阵列信号电极[J].液晶与显示, 2009, 24(4):533-536.

LIU X, CHEN X, XIE Z Y, et al. Low resistant metal for thin film transistors[J]. Chinese Journal of Liquid Crystals and Displays, 2009, 24(4):533-536. (in Chinese)

孙敏, 张金凤, 郑佳晶.遗传算法在湿法刻蚀设备温度PID控制中的应用[J].电子工业专用设备, 2014(1):31-34.

SUN M, ZHANG J F, ZHENG JJ. Genetic algorithm in the wet etching equipment temperature control[J]. Equipment for Electronic Products Manufacturing, 2014(1):31-34. (in Chinese)

李玉胜. 湿法刻蚀与清洗中晶圆缺陷问题的研究[D]. 天津: 天津大学, 2013.

LI Y S. Wafer defects issue study in wet etch and wet clean[D]. Tianjin: Tianjin University, 2013. (in Chinese)

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Fabrication of high-resolution active matrix driven GaN-based Micro-LED chips

Profile and critical dimension bias of Mo/Al/Mo electrode

Influence factors of high thickness ITO residual in TFT process

Improvement research of via hole minimized by via hole etch conditions

Effect of Active Layer Etch Conditions Improvement on TFT-LCD Quality

Related Author

GUO Tai-liang

YAN Qun

SUN Jie

HUANG Zhong-hang

YANG Tian-xi

DENG Li-ying

PAN Kui

LI Yang

Related Institution

College of Physics and Information Engineering， Fuzhou University

Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China

Rich Sense Electronics Technology Co.， Ltd.

Faculty of Electronic and Information Engineering， Xi'an Jiaotong University

Photo-Etch Engineering Department, Chongqing BOE Optoelectronics Technology CO., LTD

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China 130033 Postal code：130033
Tel：0431-86176059 Email：yjxs@ciomp.ac.cn
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰