Design of 5.5 in IGZO TFT FFS In-Cell touch panel

Ming-xin WANG; Liu-fei ZHOU; Ru-qiang TIAN

doi:10.3788/YJYXS20173212.0943

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Design of 5.5 in IGZO TFT FFS In-Cell touch panel

Material Science | 更新时间：2020-07-07

- Design of 5.5 in IGZO TFT FFS In-Cell touch panel
- Chinese Journal of Liquid Crystals and Displays Vol. 32, Issue 12, Pages: 943-948(2017)
- 作者机构：
  
  南京中电熊猫液晶显示科技有限公司研发中心, 江苏南京 210033
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20173212.0943
  CLC： TN141.9
- Received：05 June 2017，
  
  Accepted：11 July 2017，
  
  Published：05 December 2017
- 稿件说明：
移动端阅览
Ming-xin WANG, Liu-fei ZHOU, Ru-qiang TIAN. Design of 5.5 in IGZO TFT FFS In-Cell touch panel[J]. Chinese journal of liquid crystals and displays, 2017, 32(12): 943-948.
DOI：

Ming-xin WANG, Liu-fei ZHOU, Ru-qiang TIAN. Design of 5.5 in IGZO TFT FFS In-Cell touch panel[J]. Chinese journal of liquid crystals and displays, 2017, 32(12): 943-948. DOI： 10.3788/YJYXS20173212.0943.

摘要

为了达到便携移动终端日益轻薄的要求，In-cell Touch技术是触控的最佳选择。目前，非晶铟镓锌氧化物薄膜晶体管（a-IGZO TFT）越来越受到人们的关注，与传统的硅基TFT相比，IGZO拥有其相应的优势，并且制造成本较LTPS TFT低廉，制备过程容易掌控。为了将IGZO材料的优点运用在触控显示面板上，设计了一款5.5 in FHD In-cell Touch面板。为了实现FHD的分辨率，首次采用IGZO-TFT模型设计多工器（MUX），并用它驱动本文所述的面板。通过检测，触控的信噪比达54 dB以上。在文章最后展示了基于此次设计成功做出的样机。本文对实现自容式多点in-cell触控的关键结构做了简单的介绍，针对在试做过程中遇到的寄生电容问题做了详细的分析，并描述了相应的解决方法。将IGZO技术与In-cell Touch技术融合，能够在较简单的工艺下达到高规格触控面板的需求。

Abstract

In order to achieve the increasingly frivolous mobile terminal requirements

In-cell Touch technology is the best choice for touch control. At present

the Amorphous Indium Gallium Zinc Oxide Thin Film Transistor (a-IGZO TFT) has attracted more and more attention. Compared with the traditional silicon-based TFT

IGZO have their respective advantages

for example

the manufacturing cost is lower compared to LTPS TFT

and the process is easy to control. This paper introduced the design of 5.5 in FHD In-cell panel based on IGZO technology. The IGZO-TFT model is used to design the multiplexer (MUX) for the first time and drive the panel described in this paper. The SNR value of the final prototype is optimized to reach 54 dB. At the end

the paper shows the demo of this design. We briefly introduced the key structure of self-capacitance multiple in-cell touch. We analyzed the problems caused by parasitic capacitance in the producing

and described the solution of them. With integration of the IGZO technology and In-cell Touch technology

we can get a high specification touch panel in a relatively simple process.

关键词

Keywords

references

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