Etching characteristics of silicon nitride by ECCP

Jin-chao BAI; Jing WANG; Lei ZHAO; Yi-cun ZHANG; Hui-bin GUO; Hong-ming QU; Yong-zhi SONG; Liang ZHANG

doi:10.3788/YJYXS20173210.0533

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Etching characteristics of silicon nitride by ECCP

Material Science | 更新时间：2020-08-12

- Etching characteristics of silicon nitride by ECCP
- Chinese Journal of Liquid Crystals and Displays Vol. 32, Issue 7, Pages: 533-537(2017)
- 作者机构：
  
  北京京东方显示技术有限公司, 北京 100176
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20173210.0533
  CLC： TN141.9
- Received：04 May 2016，
  
  Accepted：10 August 2016，
  
  Published：05 July 2017
- 稿件说明：
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Jin-chao BAI, Jing WANG, Lei ZHAO, et al. Etching characteristics of silicon nitride by ECCP[J]. Chinese journal of liquid crystals and displays, 2017, 32(7): 533-537.
DOI：

Jin-chao BAI, Jing WANG, Lei ZHAO, et al. Etching characteristics of silicon nitride by ECCP[J]. Chinese journal of liquid crystals and displays, 2017, 32(7): 533-537. DOI： 10.3788/YJYXS20173210.0533.

摘要

本文对氮化硅的增强电容耦合等离子刻蚀进行研究，为氮化硅刻蚀工艺的优化提供参考。针对SF

气体体系，通过设计实验考察了功率、压强、气体比、氦气等对刻蚀速率和均一性的影响，并对结果进行机理分析和讨论。实验结果表明：功率越大，刻蚀速率越大，与源极射频电力相比，偏置射频电力对刻蚀速率的影响更为显著；压强增大，刻蚀速率增大，但压强增大到一定程度后，刻蚀速率基本不变，刻蚀均匀性随着压强增大而变差；在保证SF

总流量保持不变下，O

的比例增大，刻蚀速率先增大后减小，刻蚀均匀性逐步变好；He的添加可以改善刻蚀均匀性，但He的添加量过多时，会造成刻蚀速率降低。

Abstract

In order to optimize etching process of silicon nitride (SiN

)

the enhanced capacitive coupled plasma etching (ECCP)of silicon nitride was researched. With SF

as etch gas

the effects of main parameters such as power

pressure

gas rate and He gas on etch rate and uniformity has been studied

and the mechanism of test result was analysed. The results show that power increases

etch rate increases

and compared with the source RF power

the effect of the bias RF power on the etch rate is more significant; pressure increases

the etch rate increases

but the pressure increases to a certain extent

the etch rate is basically the same

the etch uniformity becomes worse with the increase of pressure; under the condition that the total flow rate of SF

is kept constant

the proportion of O

increases

the etch rate increases and then decreases

and the etch uniformity is gradually getting better; the addition of He can improve the etch uniformity

but when the amount of He is too much

it will cause the reduction of the etch rate.

关键词

Keywords

references

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