Oxide semiconductor thin film transistor device print fabrication based on solution method

Yun-xiao ZHONG; Yu XIE; Shang-xiong ZHOU; Wei-jian YUAN; Mu-yang SHI; Ri-hui YAO; Hong-long NING; Miao XU; Lei WANG; Lin-feng LAN; Jun-biao PENG

doi:10.3788/YJYXS20173206.0443

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Oxide semiconductor thin film transistor device print fabrication based on solution method

Device Technology | 更新时间：2020-07-07

- Oxide semiconductor thin film transistor device print fabrication based on solution method
- Chinese Journal of Liquid Crystals and Displays Vol. 32, Issue 6, Pages: 443-454(2017)
- 作者机构：
  
  华南理工大学高分子光电材料与器件研究所发光材料与器件国家重点实验室材料科学与工程学院, 广东广州 510640
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20173206.0443
  CLC： TN321.5
- Received：12 December 2016，
  
  Accepted：13 February 2017，
  
  Published：05 June 2017
- 稿件说明：
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Yun-xiao ZHONG, Yu XIE, Shang-xiong ZHOU, et al. Oxide semiconductor thin film transistor device print fabrication based on solution method[J]. Chinese journal of liquid crystals and displays, 2017, 32(6): 443-454.
DOI：

Yun-xiao ZHONG, Yu XIE, Shang-xiong ZHOU, et al. Oxide semiconductor thin film transistor device print fabrication based on solution method[J]. Chinese journal of liquid crystals and displays, 2017, 32(6): 443-454. DOI： 10.3788/YJYXS20173206.0443.

摘要

溶液法印刷制备电子器件因具有绿色环保、低成本、流程简单、柔性好和适应性强等优良特性，受到世界各个国家的重视，尤其高性能薄膜晶体管是平板显示和消费电子行业的基石，更成为了研究的热点。本文综述了基于溶液法氧化物薄膜晶体管印刷制备的最新研究进展，详细讨论了印刷氧化物薄膜晶体管结构优化、半导体层材料、电极层材料和绝缘层材料以及相关前驱体选择等，指出了提升器件性能的关键，明确了器件后处理与稳定性的关系。最后，本文总结了氧化物薄膜晶体管在印刷制备和应用过程中存在的问题以及发展前景。

Abstract

In recent years

solution method for electronic device print fabrication has garnered increasing interest and attention due to their green

low-cost

simple process

flexible and good adaptive

particularly in high-performance oxide semiconductor thin film transistor in flat panel display and consumer electronics industries. This review reported latest progresses of print oxide semiconductor TFT including structure optimization

semiconductor layer material

electrode layer material

insulating layer material and associated precursor selection. The relationship between device stability and post-treatment is described clearly

and the key of performance promotion is found. Moreover

several personal insights on the existing challenges and future research direction of print oxide semiconductor TFT are considered based on current advances.

关键词

Keywords

references

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