TFT character of Al electrode in TFT-LCD

Jia-xiang ZHANG; Yan-qiang WANG; Kai LU; Wen-yu ZHANG; Feng-tao WANG; Xin-you JI; Liang WANG; Jie ZHANG; Qi WANG; Kun LIU; Liang-jie LI; Jing-peng LI

doi:10.3788/YJYXS20173206.0433

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TFT character of Al electrode in TFT-LCD

Device Technology | 更新时间：2020-07-07

- TFT character of Al electrode in TFT-LCD
- Chinese Journal of Liquid Crystals and Displays Vol. 32, Issue 6, Pages: 433-437(2017)
- 作者机构：
  
  北京京东方光电科技有限公司, 北京 100176
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20173206.0433
  CLC： TN141.9
- Received：19 December 2016，
  
  Accepted：08 January 2017，
  
  Published：05 June 2017
- 稿件说明：
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Jia-xiang ZHANG, Yan-qiang WANG, Kai LU, et al. TFT character of Al electrode in TFT-LCD[J]. Chinese journal of liquid crystals and displays, 2017, 32(6): 433-437.
DOI：

Jia-xiang ZHANG, Yan-qiang WANG, Kai LU, et al. TFT character of Al electrode in TFT-LCD[J]. Chinese journal of liquid crystals and displays, 2017, 32(6): 433-437. DOI： 10.3788/YJYXS20173206.0433.

摘要

本文对Mo/Al/Mo作为TFT-LCD器件源/漏极的TFT特性进行了研究。与单层Mo相比，存在沟道界面粗糙，

off

偏大问题，通过优化膜层结构，改善界面状态，得到了平整的沟道界面和良好的TFT特性。增加Bottom Mo的厚度，可以有效减少Al的渗透，防止Al-Si化合物的形成，得到界面平整的沟道；N

刻蚀后SF

处理对特性影响不大，增加刻蚀时间可以使

和

off

同时降低；PVX沉积前处理气体N

+NH

与H

区别不大，都可以减少沟道缺陷，而增加H

处理时间会增强等离子的轰击作用，减少了沟道表面Al-Si化合物，但处理时间过长可能会使沟道缺陷增加；采用bottom Mo加厚，N

刻蚀以及PVX沉积前处理等最优条件，可以得到沟道界面良好，TFT特性与单层Mo相当的TFT器件。

Abstract

TFT character of the Mo/Al/Mo as TFT-LCD source/drain was studied. Compared with the single Mo

the channel interface was rougher and

off

was larger. Through the optimization of the structure of membrane layer and the interface state

good TFT character and smooth channel interface were received. Increasing the thickness of bottom Mo could effectively reduce the penetration of Al

and prevent the formation of Al-Si compounds to get the smooth channel interface. SF

treatment after N

etching had no influence on properties

while

and

off

were all reduced with increasing of the etching time. The treatment gas H

before PVX deposition the same as N

+NH

could reduce the channel defects. The plasma bombardment effect was enhanced and Al-Si compounds on the surface of the channel were reduced when the H

processing time was increased

but the processing time was not too long to increase channel defect. Using the best condition of bottom Mo thickening

the N

etch time increasing and the plasma treatment before PVX deposition

the good channel interface could be obtained and TFT character was as well as that of single Mo.

关键词

Keywords

references

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