Fabrication and field emission properties of patterned ZnO arrays

您当前的位置：

首页 >

文章列表页 >

Fabrication and field emission properties of patterned ZnO arrays

Material and Device | 更新时间：2020-07-07

- Fabrication and field emission properties of patterned ZnO arrays
- Chinese Journal of Liquid Crystals and Displays Vol. 32, Issue 5, Pages: 367-371(2017)
- 作者机构：
  
  福州大学物理与信息工程学院, 福建福州 350002
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20173205.0367
  CLC： O462.4
- Received：18 September 2016，
  
  Accepted：03 January 2017，
  
  Published：2017-05
- 稿件说明：
移动端阅览
Dong-ru KANG, Yun YE, Jiang-sheng WANG, et al. Fabrication and field emission properties of patterned ZnO arrays[J]. Chinese journal of liquid crystals and displays, 2017, 32(5): 367-371.
DOI：

Dong-ru KANG, Yun YE, Jiang-sheng WANG, et al. Fabrication and field emission properties of patterned ZnO arrays[J]. Chinese journal of liquid crystals and displays, 2017, 32(5): 367-371. DOI： 10.3788/YJYXS20173205.0367.

摘要

为了减小场发射的屏蔽效应，采用图形化技术对氧化锌（ZnO) 纳米枝阵列进行调控，并研究图形化ZnO枝阵列的性能。首先采用光刻法在ITO导电玻璃上制备图形化ZnO种子层，再用电沉积法在图形化种子层上生长ZnO纳米枝阵列。利用扫描电子显微镜（SEM)、X射线衍射（XRD) 研究所制备的图形化ZnO阵列形貌、结构等，并测试其场发射性能。研究结果表明，制备的图形化ZnO纳米枝是圆阵列，直径为330

μ

m左右，纳米ZnO主干平均直径为400~500 nm，发现主干上有一些精细的类似锥状的纳米量级微细枝结构，并且具有良好的场发射性能，开启场强为2.15V/

μ

m，场增强因子为16 109。该图形化生长ZnO阵列阴极的方法是一种能较好改善材料场发射性能的方法，在场发射应用领域表现出较好的前景。

Abstract

In order to reduce field shield effect

zinc oxide (ZnO) dendritic structures were controlled by pattern technology and their properties were studied. Firstly

patterned zinc oxide (ZnO) thin films were prepared by the use of photolithography on the ITO glass substrate. Patterned dendritic ZnO arrays were successfully synthesized on the ITO covered with patterned ZnO thin film by using a simply electrodeposition approach. Then

the morphology and structure characteristics of as-prepared ZnO nanostructures were characterized by scanning electron microscopy and X-ray diffraction

respectively. Moreover

field emission properties of pattern ZnO arrays were also explored. The results show that the patterned ZnO arrays are circular arrays with the diameter of 330

μ

m

the diameter of average ZnO trunks are 400~500 nm. There are many nametapes on the ZnO trunks. They exhibit good field emission properties with a turn-on field of 2.15 V/

μ

m and a field enhancement factor of 16 109. The patterned ZnO array is a feasible method for improving field emission properties.

关键词

Keywords

references

ITOH S, TANAKA M, TONEGAWA T. Development of field emission displays[J]. Journal of Vacuum Science & Technology B, 2004, 22(3):1362-1366.

KYAW A K K, SUN X W, JIANG C Y, et al. An inverted organic solar cell employing a sol-gel derived ZnO electron selective layer and thermal evaporated MoO3 hole selective layer[J]. Applied Physics Letters, 2008, 93(22):221107.

SIMON Q, BARRECA D, GASPAROTTO A, et al. Ag/ZnO nanomaterials as high performance sensors for flammable and toxic gases[J]. Nanotechnology, 2012, 23(2):025502.

WANG L N, ZHENG Y Y, LI X Y, et al. Nanostructured porous ZnO film with enhanced photocatalytic activity[J]. Thin Solid Films, 2011, 519(16):5673-5678.

GUO F, YE Y, YANG Z X, et al. The in situ preparation of novel α-Fe 2 O 3 nanorods/CNTs composites and their greatly enhanced field emission properties[J]. Applied Surface Science, 2013, 270:621-626.

方国家, 王明军, 刘逆霜, 等.ZnO纳米线阵列的定向生长、光致发光及场发射性能[J].发光学报, 2008, 29(3):421-424.

FANG G J, WANG M J, LIU N S, et al. Vertically aligned and patterned growth, photoluminescence and field electron emission properties of ZnO nanowires[J]. Chinese Journal of Luminescence, 2008, 29(3):421-424. (in Chinese)

周雄图, 曾祥耀, 张永爱, 等.Al掺杂四针状ZnO纳米结构的制备及其光致发光和场发射特性[J].发光学报, 2013, 34(11):1424-1429.

ZHOU X T, ZENG X Y, ZHANG Y A, et al. Fabrication of tetrapod-liked al-doped ZnO nanostructures and their photoluminescence and field emission properties[J]. Chinese Journal of Luminescence, 2013, 34(11):1424-1429. (in Chinese)

ZHANG Y A, WU C X, ZHENG Y, et al. Synthesis and efficient field emission characteristics of patterned ZnO nanowires[J]. Journal of Semiconductors, 2012, 33(2):023001.

HUANG Y, YU K, ZHU ZQ. Synthesis and field emission of patterned ZnO nanorods[J]. Current Applied Physics, 2007, 7(6):702-706.

ZHANG N, YU K, ZHANG Y S, et al. Patterned growth of ZnO nanorods and their field emission properties[J]. Current Applied Physics, 2009, 9(1):34-38.

YANG C M, HON M H, LEU I C. Patterned Zn-seeds and selective growth of ZnO nanowire arrays on transparent conductive substrate and their field emission characteristics[J]. Ceramics International, 2012, 38(5):4277-4283.

SONG J H, NING X, ZENG H B. ZnO nanowire lines and bundles:template-deformation-guided alignment for patterned field-electron emitters[J]. Current Applied Physics, 2015, 15(11):1296-1302.

LIU Y F, LI C, WANG J S, et al. Field emission properties of ZnO nanorod arrays by few seed layers assisted growth[J]. Applied Surface Science, 2015, 331:497-503.

0

Views

26

下载量

3

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Related Articles

Rapid growth mechanism and field emission properties of ZnO nanowires

Electron focused ZnO field emission backlight unit

Optimization Fabrication for Semicircle-Group Cathode-Grid Structure with Triode Small-Sized Field Emission Display

Field Emission Characteristics of Carbon Nanometer Ball Films

Fabrication and Properties of Patterned Si Nanowire Arrays FED Cathode

Related Author

Jian-ping LIN

Zhi YANG

Zhong-hua ZHENG

DI Yun-song

ZHAO Li-fang

LI Yu-kui

WANG Feng-ge

LIU Xing-hui

Related Institution

Key Laboratory of Functional Materials and Applications of Fujian Province, Xiamen University of Technology

Electronic Materials Research Laboratory, Xi'an Jiaotong University

Concord University College Fujian Normal University

School of Physics Science and Technology, Nanjing Normal University

Nanjing College of Information Technology

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China 130033 Postal code：130033
Tel：0431-86176059 Email：yjxs@ciomp.ac.cn
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰