Analysis and improvement of vertical line mura

Guang-ming ZHANG; Jin-chao BAI; Hong-ming QU; Yi-cun ZHANG; Kai YU

doi:10.3788/YJYXS20173205.0352

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Analysis and improvement of vertical line mura

Material and Device | 更新时间：2020-07-07

- Analysis and improvement of vertical line mura
- Chinese Journal of Liquid Crystals and Displays Vol. 32, Issue 5, Pages: 352-356(2017)
- 作者机构：
  
  北京京东方显示技术有限公司, 北京 100176
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20173205.0352
  CLC： TN141.9
- Received：09 May 2016，
  
  Accepted：31 May 2016，
  
  Published：2017-05
- 稿件说明：
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Guang-ming ZHANG, Jin-chao BAI, Hong-ming QU, et al. Analysis and improvement of vertical line mura[J]. Chinese journal of liquid crystals and displays, 2017, 32(5): 352-356.
DOI：

Guang-ming ZHANG, Jin-chao BAI, Hong-ming QU, et al. Analysis and improvement of vertical line mura[J]. Chinese journal of liquid crystals and displays, 2017, 32(5): 352-356. DOI： 10.3788/YJYXS20173205.0352.

摘要

针对栅极绝缘层和栅极引线接触处形成过孔倒角造成的一种垂直线不良进行分析和改善。研究气相沉积、干法刻蚀和磁控溅射对过孔倒角的影响，通过扫描电子显微镜对过孔形貌进行表征，并用成盒检测设备检测不良发生情况。实验结果表明：通过过孔刻蚀功率、气压、气体流量的变更可以消除倒角现象，垂直线不良由1.4%降为0.7%。

Abstract

The vertical line mura which was caused by the via hole undercut between gate insulating layer and gate line has been researched. The effect of plasma enhanced chemical vapor deposition (PECVD)

dry etch

sputter on via hole undercut was studied

and via hole morphology was characterized by scanning electron microscopy (SEM)

the ratio of vertical line mura was tested by cell test equipment. The via hole undercut can be removed by changing via etch power

pressure

gas flow

and the vertical line was reduced from 1.4% to 0.7%.

关键词

Keywords

references

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