Effect of insulating layer material and structure on performance of thin film transistors

Xin-yu LI; Ruo-zheng WANG; Sheng-li WU; Zun-chao LI

doi:10.3788/YJYXS20173205.0344

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Effect of insulating layer material and structure on performance of thin film transistors

更新时间：2020-07-07

- Effect of insulating layer material and structure on performance of thin film transistors
- Chinese Journal of Liquid Crystals and Displays Vol. 32, Issue 5, Pages: 344-351(2017)
- 作者机构：
  
  1.西安交通大学电子物理与器件教育部重点实验室, 陕西西安 710049
  2.西安交通大学微电子学院, 陕西西安 710049
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20173205.0344
  CLC：
- Received：08 November 2016，
  
  Accepted：06 January 2017，
  
  Published：2017-05
- 稿件说明：
移动端阅览
Xin-yu LI, Ruo-zheng WANG, Sheng-li WU, et al. Effect of insulating layer material and structure on performance of thin film transistors[J]. Chinese journal of liquid crystals and displays, 2017, 32(5): 344-351.
DOI：

Xin-yu LI, Ruo-zheng WANG, Sheng-li WU, et al. Effect of insulating layer material and structure on performance of thin film transistors[J]. Chinese journal of liquid crystals and displays, 2017, 32(5): 344-351. DOI： 10.3788/YJYXS20173205.0344.

摘要

基于半导体仿真软件Silvaco TCAD对薄膜晶体管（TFT) 进行器件仿真，并结合实验验证，重点分析不同绝缘层材料及结构对TFT器件性能的影响。仿真及实验所用薄膜晶体管为底栅电极结构，沟道层采用非晶IGZO材料，绝缘层采用SiN

和HfO

多种不同组合的叠层结构。仿真及实验结果表明：含有高k材料的栅绝缘层叠层结构较单一SiN

绝缘层结构的TFT性能更优；对SiN

/HfO

/SiN

栅绝缘层叠层结构TFT，HfO

取40 nm较为合适；对含有高k材料的3层和5层绝缘层叠层结构TFT，各叠层厚度相同的对称结构TFT性能最优。本文通过仿真获得了TFT性能较优的器件结构参数，对实际制备TFT器件具有指导作用。

Abstract

The paper focuses on analyzing the performance of thin film transistors with different insulation material and different insulation layer structures

based on semiconductor simulation software Silvaco TCAD and combined with experimental validation. The research model is based on the bottom grid structure

and the semiconductor layer is made of amorphous IGZO material. The insulation layer is made of different combinations of SiN

and HfO

with overlapping structure. The simulation and experiment results show that the performance of transistors with high-k overlapping insulation layer structure is better than transistors with single SiN

layer. For SiN

/HfO

/SiN

structure

40 nm-thickness HfO

is more appropriate. For transistors with 3 or 5 insulation layers containing high-k materials

the symmetric structure with the same thickness for each layer is the best. The device structure parameters of TFT obtained by simulation can guide the actual production of TFT devices.

关键词

Keywords

references

KAGAN C R, ANDRY P. Thin-Film Transistors[M]. The United Kingdom:CRC Press, 2003:1.

翁寿松.高K绝缘层研究动态[J].微纳电子技术, 2005, 42(5):220-223, 248.

WENG S S. Recent researching trends in the high-K insulating layer[J]. Micronanoelectronic Technology, 2005, 42(5):220-223, 248. (in Chinese)

魏勤香. HfO 2 高介电常数栅介质薄膜的制备及其电学性能的研究[D]. 武汉: 湖北大学, 2011.

WEI Q X. The preparation and electrical properties of HfO 2 high-K gate dielectric thin films[D]. Wuhan:Hubei University, 2011. (in Chinese)

韩德栋, 康晋锋, 杨红, 等.超薄HfO 2 高K栅介质薄膜的软击穿特性[J].固体电子学研究与进展, 2005, 25(2):157-159.

HAN D D, KANG J F, YANG H, et al. Soft breakdown characteristics of ultra-thin high-K HfO 2 gate dielectrics[J]. Research & Progress of SSE, 2005, 25(2):157-159. (in Chinese)

GUO D Y, WU Z P, AN Y H, et al. Unipolar resistive switching behavior of amorphous gallium oxide thin films for nonvolatile memory applications[J]. Applied Physics Letters, 2015, 106(4):042105.

唐龙谷.半导体工艺和器件仿真软件Silvaco TCAD实用教程[M].北京:清华大学出版社, 2014:5.

TANG L G.Semiconductor Craft and Device Simulation Software Silvaco TCAD[M]. Beijing:Tsinghua University Press, 2014:5. (in Chinese)

龚炽昌.不均匀介质相对介电常数和介质损耗角正切的计算[J].电工技术学报, 1987(2):53-60, 44.

GONG Z C. Calculation for relative dielectric constant and dielectric loss tangent of heterogeneous dielectric[J].Transactions of China Electrotechnical Society, 1987(2):53-60, 44. (in Chinese)

NEAMEN D A. Semiconductor Physics and Devices:Basic Principles[M]. The United States:The McGraw-Hill Companies, Inc. 2003:317-318, 327-328, 346-347.

乔敏. 基于TFT器件仿真的AMOLED像素电路研究[D]. 西安: 西安交通大学, 2014.

QIAO M.The research of AMOLED pixel circuit based on TFT device simulation[D]. Xi'an:Xi'an Jiaotong University, 2014. (in Chinese)

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