Improvement of photoresist abnormal degeneration in inductively coupled plasma etch

Chun-jie XU; Fu-gang ZHANG; Li-jia CUI; Xue-feng ZHANG; Hao XU; Ri-jiu LIU; Gen-fan Li; Shi-kai WANG; Zai-run ZJENG

doi:10.3788/YJYXS20173204.0265

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Improvement of photoresist abnormal degeneration in inductively coupled plasma etch

Material and Device | 更新时间：2020-07-07

- Improvement of photoresist abnormal degeneration in inductively coupled plasma etch
- Chinese Journal of Liquid Crystals and Displays Vol. 32, Issue 4, Pages: 265-268(2017)
- 作者机构：
  
  合肥鑫晟光电科技有限公司, 安徽合肥 230011
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20173204.0265
  CLC： TN141.9
- Received：11 November 2016，
  
  Accepted：18 November 2016，
  
  Published：2017-04
- 稿件说明：
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Chun-jie XU, Fu-gang ZHANG, Li-jia CUI, et al. Improvement of photoresist abnormal degeneration in inductively coupled plasma etch[J]. Chinese journal of liquid crystals and displays, 2017, 32(4): 265-268.
DOI：

Chun-jie XU, Fu-gang ZHANG, Li-jia CUI, et al. Improvement of photoresist abnormal degeneration in inductively coupled plasma etch[J]. Chinese journal of liquid crystals and displays, 2017, 32(4): 265-268. DOI： 10.3788/YJYXS20173204.0265.

摘要

通过不同感应耦合等离子体刻蚀条件下进行的玻璃基板发生光刻胶变性的位置，研究光刻胶变性与下部电极结构的相关性。研究结果表明：下部电极的Dam区对玻璃基板的冷却效果较差，导致该区域的玻璃基板上光刻胶容易产生变性。经过对下部电极Dam区的改造可以有效增大玻璃基板的冷却范围，改善光刻胶变性残留问题。

Abstract

Comparing with the degenerated map of photoresist with substrate under different condition of inductively coupled plasma (ICP) etch recipe

this article explored the relationship between the degeneration of photoresist and the structure of electrode. Research results showed that the edge of electrode

which we called Dam Area

has poor cooling performance

thus leading to much more possibility of degeneration. We also developed an optimized Dam structure of electrode that can be used to enhance the cooling performance of the substrate

and solved the degeneration issue.

关键词

Keywords

references

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