Effect of pretreatment of tray on hillock formation in pure Al films

Liang XIAO; Xun-ze ZHANG; Xiang-xiu PIAO

doi:10.3788/YJYXS20173202.0104

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Effect of pretreatment of tray on hillock formation in pure Al films

Materialand Device | 更新时间：2020-07-07

- Effect of pretreatment of tray on hillock formation in pure Al films
- Chinese Journal of Liquid Crystals and Displays Vol. 32, Issue 2, Pages: 104-109(2017)
- 作者机构：
  
  合肥京东方光电科技有限公司, 安徽合肥 230012
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20173202.0104
  CLC： TB31
- Received：22 August 2016，
  
  Accepted：01 November 2016，
  
  Published：05 February 2017
- 稿件说明：
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Liang XIAO, Xun-ze ZHANG, Xiang-xiu PIAO. Effect of pretreatment of tray on hillock formation in pure Al films[J]. Chinese journal of liquid crystals and displays, 2017, 32(2): 104-109.
DOI：

Liang XIAO, Xun-ze ZHANG, Xiang-xiu PIAO. Effect of pretreatment of tray on hillock formation in pure Al films[J]. Chinese journal of liquid crystals and displays, 2017, 32(2): 104-109. DOI： 10.3788/YJYXS20173202.0104.

摘要

在TFT Array制程中，使用刚刚更换过清洗品的载盘生产纯铝薄膜时，基板周边常常会出现小丘，小丘的生成将严重影响产品的电学性能和良率。本文通过生产线上常用的阵列宏微观缺陷检查机对纯铝薄膜表面进行观察并存图，利用MATLAB软件对图片进行分析和计算，实现了工厂端对小丘发生情况的快速识别和比对。本文就可能影响小丘生成的纯铝薄膜膜厚、载盘预处理时间以及成膜后玻璃基板在加热腔室内的停留时间等几个因素设计了正交和单因素实验。实验结果表明，载盘的预处理时间是影响小丘生成的首要因素，当载盘预处理时间大于90 min，膜厚为铝/钼300/80 nm，成膜后基板在加热腔室不停留的情况下，可以获得表面几乎无小丘的纯铝薄膜，这一结果对有效避免生产过程中因更换清洗品等原因导致的小丘生成具有重要的意义。

Abstract

In production of pure Al film in TFT array

hillock which will seriously affect the electrical properties and yield of the products often forms around the glass substrate after replacing the cleaning spare parts of the trays. In factory

a method is shown to quickly identify and compare the formation of hillock

which include using a commonly used machine on the production line called array macro-micro defect inspection machine to observe the surface of pure Al film and then save the pictures which will be analyzed and calculated by MATLAB. In this paper

orthogonal and single experiments are designed with the possible influential factors of hillock formation

which are the thickness of pure Al film

the time of pretreatment of tray and the pause time of the glass substrate after deposition of pure Al film in heater chamber. It is found that the main factor of hillock formation is the time of pretreatment of tray. The pure Al film with none hillock can be obtained when the thicknesses of pure Al film and Mo protective layer are 300 nm and 80 nm

the time of pretreatment of tray is over 90 min and the substrate have no pause in the heater chamber after deposition of pure Al film

which is meaningful to prevent the hillock formation caused by the replacement of cleaning spare parts et al. in pure Al film production.

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references

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