HSU H H, CHANG C Y, CHENG C H, et al. Fully room-temperature IGZO thin film transistors adopting stacked gate dielectrics on flexible polycarbonate substrate[J].Solid-State Electronics, 2013, 89:194-197.

HOSONO H.Ionic amorphous oxide semiconductors:Material design, carrier transport, and device application[J].Journal of Non-Crystalline Solids, 2006, 352(9/20):851-858.

PARK J H, JEON K, LEE S, et al. Extraction of density of states in amorphous GaInZnO thin-film transistors by combining an optical charge pumping and capacitance-voltage characteristics[J].IEEE Electron Device Letters, 2008, 29(12):1292-1295.

刘冲, 韦敏, 杨帆, 等.电极材料对IGZO薄膜晶体管性能的影响[J].发光学报, 2014, 35(11):1365-1369.

LIU C, WEI M, YANG F, et al. Effects of electrode materials on the performances of IGZO-based thin film transistor[J].Chinese Journal of Luminescence, 2014, 35(11):1365-1369.(in Chinese)

陈龙龙, 张建华, 李喜峰, 等.基于柔性PI基底的氧化物IGZO TFT器件工艺及特性研究[J].液晶与显示, 2015, 30(5):796-800.

CHEN L L, ZHANG J H, LI X F, et al. Process and properties of oxide IGZO TFT device based on flexible PI substrate[J].Chinese Journal of Liquid Crystals and Displays, 2015, 30(5):796-800.(in Chinese)

刘国柱, 夏都灵, 杨文君, 等.柔性显示的研究进展[J].材料导报, 2008, 22(6):111-115.

LIU G Z, XIA D L, YANG W J, et al. Research progress in flexible displays[J].Materials Review, 2008, 22(6):111-115.(in Chinese)

WANG Y, LIU S W, SUN X W, et al. Highly transparent solution processed In-Ga-Zn oxide thin films and thin film transistors[J].Journal of Sol-Gel Science and Technology, 2010, 55(3):322-327.

HWANG S, LEE J H, WOO C H, et al. Effect of annealing temperature on the electrical performances of solution-processed InGaZnO thin film transistors[J].Thin Solid Films, 2011, 519(15):5146-5149.

FURUTA M, KAWAHARAMURA T, WANG D P, et al. Electrical properties of the thin-film transistor with an Indium-Gallium-Zinc oxide channel and an aluminium oxide gate dielectric stack formed by solution-based atmospheric pressure deposition[J].IEEE Electron Device Letters, 2012, 33(6):851-853.

邹春辉, 张婷, 汤猛, 等.DUV辅助高压退火对a-IGZO薄膜微结构及光学特性的影响[J].固体电子学研究与进展, 2016, 36(2):165-170.

ZOU C H, ZHANG T, TANG M, et al. Effects of DUV-assisted high pressure annealing on microstructure and optical properties of a-IGZO thin films[J].Research & Progress of SSE, 2016, 36(2):165-170.(in Chinese)

马洪磊, 马瑾.透明氧化物半导体[M].北京:科学出版社, 2014.

MA H L, MA J.Transparent Oxide Semiconductor[M].Beijing:Science Press, 2014.(in Chinese)

SEO H, PARK C J, CHO Y J, et al. Correlation of band edge native defect state evolution to bulk mobility changes in ZnO thin films[J].Applied Physics Letters, 2010, 96(4):232101.

WANG J P, WANG Z Y, HUANG B B, et al. Oxygen vacancy induced band-gap narrowing and enhanced visible light photocatalytic activity of ZnO[J].ACS Appl.Mater.Interfaces, 2012, 4(8):4024-4030.