Influence of exhaust mode and process on uniformity of plasma etching a-Si

Li-xiang ZhANG; Hai-tao WANG; You-hai WANG; Qing-feng XIA

doi:10.3788/YJYXS20163112.1112

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Influence of exhaust mode and process on uniformity of plasma etching a-Si

Material and Device | 更新时间：2020-07-07

- Influence of exhaust mode and process on uniformity of plasma etching a-Si
- Chinese Journal of Liquid Crystals and Displays Vol. 31, Issue 12, Pages: 1112-1117(2016)
- 作者机构：
  
  中航光电子有限公司, 上海 201100
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20163112.1112
  CLC： TP394.1;TH691.9
- Received：15 August 2016，
  
  Accepted：18 October 2016，
  
  Published：05 December 2016
- 稿件说明：
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Li-xiang ZhANG, Hai-tao WANG, You-hai WANG, et al. Influence of exhaust mode and process on uniformity of plasma etching a-Si[J]. Chinese journal of liquid crystals and displays, 2016, 31(12): 1112-1117.
DOI：

Li-xiang ZhANG, Hai-tao WANG, You-hai WANG, et al. Influence of exhaust mode and process on uniformity of plasma etching a-Si[J]. Chinese journal of liquid crystals and displays, 2016, 31(12): 1112-1117. DOI： 10.3788/YJYXS20163112.1112.

摘要

本文对在等离子体刻蚀工艺中，功率、压强、气体比例重要参数对a-Si刻蚀均一性的影响进行了研究。采用PECVD成膜、RIE等离子体刻蚀，并通过台阶仪和光谱膜厚测定仪对膜厚进行表征。结果表明压强在10~15 Pa，功率在5 500~6 500 W的参数区间，a-Si刻蚀均一性波动不大，适合工业化生产。a-Si刻蚀速率及刻蚀均一性对气体比例较为敏感，SF

:HCl=800:2 800 mL/min时a-Si刻蚀均一性为最佳。四角排气方式对维持等离子体浓度作用明显，有利于刻蚀均一性的提升。四周排气方式会破坏等离子体浓度进而破坏a-Si刻蚀的均一性。

Abstract

The influence of power

pressure and gas ratio on uniformity plasma etching a-Si was studied. The results show that the process of pressure in 10~15 Pa

power in 5 500~6 500 W is suitable for industrial production because a-Si etching uniformity is very stable. Etching rate and uniformity of a-Si is more sensitive to etching gas ratio. When SF

:HCl=800:2 800 mL/min

the etching uniformity of a-Si is the best. Gas exhausting from corners can maintain the plasma concentration obvious

which is conducive to enhance the uniformity of plasma etching. Gas exhausting from around will undermine plasma concentration and thus undermine the uniformity of a-Si etching.

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references

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