Xiao-wei LIU, ming TIAN, Liang-liang LI, et al. Analysis and improvement of a larger size TFT-LCD block mura[J]. Chinese journal of liquid crystals and displays, 2016, 31(11): 1033-1037.
DOI:
Xiao-wei LIU, ming TIAN, Liang-liang LI, et al. Analysis and improvement of a larger size TFT-LCD block mura[J]. Chinese journal of liquid crystals and displays, 2016, 31(11): 1033-1037. DOI: 10.3788/YJYXS20163111.1033.
Analysis and improvement of a larger size TFT-LCD block mura
A new unknown block mura of large size TFT-LCD has been studied in this paper. The mura was observed by SEM
Four-probe tester and Spectrophotometer. It is caused by the periodic changing of TFT metal line thickness. The periodic changing of metal line thickness led to the changing of LCD cell gap
influencing display quality of TFT-LCD. The periodic changing metal line thickness is caused by adopting the structure of a kind of flat target magnetron sputter equipment
which is used in large size TFT-LCD production line widely. The thickness uniformity of metal line was improved by modifying the equipment structure. The mura disappeared after the thickness uniformity is improved.
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references
LEE Y H, TANG K H. How human perceptions of Mura affect LCD market values[J]. Displays , 2012, 33(1):46-53.
XU W, PENG Y W, XIAO G H. Analysis and improvement of unknown Mura[J]. Chinese Journal of Liquid Crystals and Displays, 2011, 26(5):612-615. (in Chinese)
YOSHIDA Y, KIKUCHI Y, DALY S, et al. 66.3:Invited Paper:image quality improvements in large-screen LC-TV[J]. SID Symposium Digest of Technical Papers, 2005, 36(1):1852-1855.
CHAEG S, SOH H S, LEE W H, et al. Self-passivated copper as a gate electrode in a poly-Si thin film transistor liquid crystal display[J]. Journal of Applied Physics , 2001, 90(1):411-415.
CHOPRAK L. Size effects in the longitudinal magnetoresistance of thin silver films[J]. Physical Review , 1967, 155(3):660-662.
Effect of oxygen to argon ratio on the electrical performance of Ta2O5 gate dielectric thin film transistor
Properties of MoOx thin films prepared by magnetron sputtering
Effect of annealing treatment on the performances of 40 nm thick p-ITO films prepared by DC magnetron sputtering
Effect of pretreatment of tray on hillock formation in pure Al films
Ag/Ti source/drain electrodes for amorphous InGaZnO thin flim transistors
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Related Institution
Jilin Normal University
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