Description about electric field-induced new order reconstruction in a nanoconfined HAN cell

Si-bo CHEN; Yong-chao WANG; Xuan ZHOU; Zhi-dong ZHANG

doi:10.3788/YJYXS20163109.0853

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Description about electric field-induced new order reconstruction in a nanoconfined HAN cell

Material and Devic | 更新时间：2020-07-07

- Description about electric field-induced new order reconstruction in a nanoconfined HAN cell
- Chinese Journal of Liquid Crystals and Displays Vol. 31, Issue 9, Pages: 853-861(2016)
- 作者机构：
  
  河北工业大学理学院, 天津 300401
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20163109.0853
  CLC： O753.2
- Received：06 April 2016，
  
  Accepted：23 May 2016，
  
  Published：2016-09
- 稿件说明：
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Si-bo CHEN, Yong-chao WANG, Xuan ZHOU, et al. Description about electric field-induced new order reconstruction in a nanoconfined HAN cell[J]. Chinese journal of liquid crystals and displays, 2016, 31(9): 853-861.
DOI：

Si-bo CHEN, Yong-chao WANG, Xuan ZHOU, et al. Description about electric field-induced new order reconstruction in a nanoconfined HAN cell[J]. Chinese journal of liquid crystals and displays, 2016, 31(9): 853-861. DOI： 10.3788/YJYXS20163109.0853.

摘要

基于Landau-de Gennes理论，利用松弛迭代的方法，研究了包含-1/2向错线的混合排列（HAN）液晶盒中，平行于向错线的电场所诱导的结构转变。结果表明，盒厚固定时，电场诱导五种结构转变过程；电场固定时，盒厚变化产生三类结构转变方式。力曲线上的极小值确定了液晶系统发生结构转变的临界盒厚。

Abstract

Based on the Landau-de Gennes theory

with the relaxation iterative method

we investigated the electric field-induced structure transition in a nanoconfined HAN cell with -1/2 topological defect

where the electric field is parallel to the disclination line. Our results show that with fixed cell gaps

five new structure transition processes are induced by electric field; while cell gap variation leads to three transition modes for an applied electric field. The critical value of cell gap corresponding to the structure transition is characterized by the local minimum in the force curve.

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references

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Related Author

Hong-en LIU

Jin-bing WU

Meng-fei LIU

Xuan ZHOU

Zhi-dong ZHANG

He MA

Si-bo CHEN

WANG Yong-chao

Related Institution

Department of Applied Physics, Hebei University of Technology

School of Electronic and Information Engineering, Hebei University of Technology

Tianjin Key Laboratory of Electronic Materials and Devices

School of Science, Hebei University of Technology, Tianjin 300401, China

School of Science, Hebei University of Technology

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