Hui ZHANG, Gui-li ZHENG, Yi TIAN, et al. Theoretical analysis of the influence of flexoelectric effect on the +1 defect site in nematic inversion walls[J]. Chinese journal of liquid crystals and displays, 2016, 31(8): 740-747.
DOI:
Hui ZHANG, Gui-li ZHENG, Yi TIAN, et al. Theoretical analysis of the influence of flexoelectric effect on the +1 defect site in nematic inversion walls[J]. Chinese journal of liquid crystals and displays, 2016, 31(8): 740-747. DOI: 10.3788/YJYXS20163108.0740.
Theoretical analysis of the influence of flexoelectric effect on the +1 defect site in nematic inversion walls
Based on the experimental phenomena of flexoelectric response at defect sites in nematic inversion walls conducted by Pramoda Kumar
et al
.
we gave the theoretical analysis using the Landau-de Gennes theory. When a direct-current electric field normal to the plane of substrate is applied to the parallel aligned nematic liquid crystal cell with weak anchoring
the rotation of ±1 defects in the narrow inversion walls can be exhibited. The free energy of liquid crystal molecules around the +1 defect site was formulated and the electric field driven structural changes at the defect site characterized by polar and azimuthal angles of the local director were simulated. The results reveal that the deviation of azimuthal angle induced by flexoelectric effect are consistent with the switching of extinction brushes at the +1 defect obtained in the experiment conducted by Pramoda Kumar
et al
.
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references
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