Research of zinc oxide quantum dot light-emitting diodes based on preparation of chemical solutions

Yi SUN; Qing LI

doi:10.3788/YJYXS20163107.0635

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Research of zinc oxide quantum dot light-emitting diodes based on preparation of chemical solutions

Materialand Device | 更新时间：2020-07-07

- Research of zinc oxide quantum dot light-emitting diodes based on preparation of chemical solutions
- Chinese Journal of Liquid Crystals and Displays Vol. 31, Issue 7, Pages: 635-642(2016)
- 作者机构：
  
  东南大学电子科学与工程学院, 江苏南京 210018
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20163107.0635
  CLC： TN312.8
- Received：11 February 2016，
  
  Accepted：01 April 2016，
  
  Published：2016-07
- 稿件说明：
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Yi SUN, Qing LI. Research of zinc oxide quantum dot light-emitting diodes based on preparation of chemical solutions[J]. Chinese journal of liquid crystals and displays, 2016, 31(7): 635-642.
DOI：

Yi SUN, Qing LI. Research of zinc oxide quantum dot light-emitting diodes based on preparation of chemical solutions[J]. Chinese journal of liquid crystals and displays, 2016, 31(7): 635-642. DOI： 10.3788/YJYXS20163107.0635.

摘要

氧化锌（ZnO）量子点是一种宽直接带隙半导体纳米颗粒，具有激子束缚能大、绿色环保、量子效应等优点，引起广泛关注。近期，将通过化学溶液法制备的ZnO量子点应用到发光二极管的研究成为热点。文章综述了近几年ZnO量子点发光二极管研究进展，重点介绍了各种结构的ZnO量子点发光二极管最新研究成果，并对ZnO量子点发光二极管的发展趋势进行了展望。

Abstract

Zinc oxide (ZnO) quantum dot is a kind of wide direct band gap semiconductor nanoparticle

with many advantages

e.g.

larger exciton binding energy

environmental friendly

quantum effects

which has attracted a number of attentions. Recently

the ZnO quantum dots prepared through chemical solutions was applied more actively in the study of light emitting diodes. The review describes the achievements in the field of ZnO quantum dot light emitting diode in recent years. We concentrate on the current achievements and problems of the ZnO quantum dot light emitting diode of various structures

and the development trend of ZnO quantum dot light emitting diodes in the future.

关键词

Keywords

references

HOLONYAK JR N,BEVACQUA S F.Coherent (visible) light emission from Ga (As 1-x P x ) junctions[J].Applied Physics Letters,1962,1(4):82-83.

STERANKA F M,BHAT J,COLLINS D,et al. High power LEDs-technology status and market applications[J].Physica Status Solidi (a),2002,194(2):380-388.

NAKAMURA S.GaN growth using GaN buffer layer[J].Japanese Journal of Applied Physics,1991,30(10A):L1705-L1707.

NAKAMURA S,MUKAI T.High-quality InGaN films grown on GaN films[J].Japanese Journal of Applied Physics,1992,31(10B):L1457-L1459.

NAKAMURA S.The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes[J].Science,1998,281(5379):956-961.

PONCE F A,BOUR D P.Nitride-based semiconductors for blue and green light-emitting devices[J].Nature,1997,386(6623):351-359.

WANG T,LIU Y H,LEE Y B,et al. Fabrication of high performance of AlGaN/GaN-based UV light-emitting diodes[J].Journal of Crystal Growth, 2002,235(1/4):177-182.

方志烈.发光二极管材料与器件的历史、现状和展望[J].物理,2003,32(5):295-301.

FANG Z L.Future applications of light emitting diodes[J].Physics,2003,32(5):295-301.(in Chinese)

GAO S,ZHAO S L,XU Z,et al. Heterojunction of ZnO nanoparticle/PMMA and its ultraviolet electroluminescence[J].Optics Letters,2014,39(9):2633-2636.

ALIVISATOS A P.Semiconductor clusters,nanocrystals,and quantum dots[J].Science,1996,271(5251):933-937.

张辉,陈贵锋,莫兆军,等.溶液法制备氧化锌晶体的微结构及发光特性研究[J].发光学报,2015,36(6):628-633.

ZHANG H,CHEN G F,MO Z J,et al. Microstructure and photoluminescence characteristics of solution controlled ZnOcrystals[J].Chinese Journal of Luminescence,2015,36(6):628-633.(in Chinese)

COLVIN V L,SCHLAMP M C,ALIVISATOS A P.Light-emitting diodes made from cadmium selenide nanocrystals and a semiconducting polymer[J].Nature,1994,370(6488):354-357.

SHIRASAKI Y,SUPRAN G J,BAWENDI M G,et al. Emergence of colloidal quantum-dot light-emitting technologies[J].Nature Photonics,2013,7(1):13-23.

杨玲敏,叶志镇.ZnO量子点的制备及其光电性能研究进展[J].微纳电子技术,2004,41(12):22-25,32.

YANG L M,YE ZZ.Development of the preparation of ZnO quantum dots and their optical-electrical properties[J].Nanomaterial & Structure,2004,41(12):22-25,32.(in Chinese)

LIN K F,CHENG H M,HSU H C,et al. Band gap variation of size-controlled ZnO quantum dots synthesized by sol-gel method[J].Chemical Physics Letters,2005,409(4/6):208-211.

STROYUK O L,DZHAGAN V M,SHVALAGIN V V,et al. Size-dependent optical properties of colloidal ZnO nanoparticles charged by photoexcitation[J].The Journal of Physical Chemistry C,2009,114(1):220-225.

刘英麟,刘益春,王维彪,等.一种新的制备ZnO纳米粒子的方法——阴极电沉积法[J].发光学报,2003,24(3):289-292.

LIU Y L,LIU Y C,WANG W B,et al.A new method of growing nanocrystallineZnOfilms:Cathodic electrodeposition[J].Chinese Journal of Luminescence,2003,24(3):289-292.(in Chinese)

Dai X,Zhang Z,Jin Y,et al. Solution-processed,high-performance light-emitting diodes based on quantum dots[J].Nature,2014,515(7525):96-99.

CHO K S,LEE E K,JOO W J,et al. High-performance crosslinked colloidal quantum-dot light-emitting diodes[J].Nature Photonics,2009,3(6):341-345.

MUSA I,MASSUYEAU F,CARIO L,et al. Temperature and size dependence of time-resolved exciton recombination in ZnO quantum dots[J].Applied Physics Letters,2011,99(24):243107.

PANASIUK Y V,RAEVSKAYA O E,STROYUK O L,et al. Colloidal ZnOnanocrystals in dimethylsulfoxide:a new synthesis,optical,photo-and electroluminescent properties[J].Nanotechnology,2014,25(7):075601.

BENDRE B S,MAHAMUNI S.Luminescence in ZnO quantum particles[J].Journal of Materials Research,2004,19(3):737-740.

ZOU G F,YU D B,WANG D B,et al. Controlled synthesis of ZnOnanocrystals with column-,rosette-and fiber-like morphologies and their photoluminescence property[J].Materials Chemistry and Physics,2004,88(1):150-154.

乔泊.ZnO量子点的合成及与MEH-PPV复合电致发光器件的研究[D].北京:北京交通大学,2012. http://cdmd.cnki.com.cn/article/cdmd-10004-1012357512.htm

QIAO B.Synthesis of ZnO quantum dots and applications in organic light emitting diodes based on MEH-PPV[D].Beijing:Beijing Jiaotong University,2012.(in Chinese)

ARMELAO L,FABRIZIO M,GIALANELLA S,et al. Sol-gel synthesis and characterisation of ZnO-based nanosystems[J].Thin Solid Films, 2001,394(1/2):89-95.

李成斌,徐至展,贾天卿,等.氧化锌纳米颗粒缺陷能级发光特性研究[J].液晶与显示,2004,19(6):431-433.

LI C B,XU Z Z,GU T Q,et al. Photoluminescence characterization of zinc oxide nanoparticle defects[J].Chinese Journal of Liquid Crystals and Displays, 2004,19(6):431-433.(in Chinese)

吴素贞,邓赞红,董伟伟,等.氧化锌基发光二极管的研究进展[J].材料导报,2013,27(1):28-33.

WU S Z,DENG Z H,DONG WW,et al.Recent Advances in ZnO-based Light-emitting Diodes[J].Materials Review,2013,27(1):28-33.(in Chinese)

YAMAMOTO S,MISHINA T.Enhanced band-edge photoluminescence from MgOpassivatedZnOnanocrystals[J].Journal of Luminescence,2011,131(4):620-622.

KUANG W J,LI Q,PAN J Y,et al. Optical properties of ultraviolet quantum dot light-emitting devices using ZnO-cores with aMgO-shell[J].Journal of Display Technology, 2015,11(5):461-465.

刘姝妤,钟绵增,孟秀清,等.ZnO/ZnS核-壳量子点的双光子吸收效应[J].发光学报,2015,36(2):249-255.

LIU S Y,ZHONG M Z,MENG X Q,et al. Two-photon Absorption in ZnO/ZnS Core-shell Quantum Dots[J].Chinese Journal of Luminescence, 2015,36(2):249-255.(in Chinese)

宋波,张复实,向军辉.电致发光二极管研究进展[J].世界科技研究与发展,2009,31(3):394-398,401.

SONG B,ZHANG F S,XIANG J H.Recent development of electroluminescence diodes[J].World Sci-Tech R&D, 2009,31(3):394-398,401.(in Chinese)

GOH E S M,YANG H Y,HAN Z J,et al. Controlled electroluminescence of n-ZnMgO/p-GaN light-emitting diodes[J].Applied Physics Letters,2012,101(26):263506.

FANG X,WANG X H,ZHAO D X,et al. Electroluminescence of ZnOnanorods/ZnMgO films/p-SiC structure heterojunction LED[J].Physica E:Low-Dimensional Systems and Nanostructures,2014,59:93-97.

TSAI S Y,HON M H,LU Y M.Fabrication of transparent p-NiO/n-ZnOheterojunction devices for ultraviolet photodetectors[J].Solid-State Electronics,2011,63(1):37-41.

SHI Z F,ZHAO L,XIA X C,et al. Effect of MgZnO barrier layer on the UV emission of n-ZnO/p-Si heterojunctiondiodes[J].Journal of Luminescence, 2011,131(8):1645-1648.

QIAO Q,LI B H,SHAN C X,et al. Light-emitting diodes fabricated from small-size ZnO quantum dots[J].Materials Letters, 2012,74:104-106.

MO X M,LONG H,WANG H N,et al. Enhanced ultraviolet electroluminescence and spectral narrowing from ZnO quantum dots/GaNheterojunction diodes by using high-k HfO 2 electron blocking layer[J].Applied Physics Letters, 2014,105(6):063505.

WANG D K,WANG F,WANG Y P,et al. Interfacial emission adjustment in ZnO quantum dots/p-GaNheterojunctionlight-emitting diodes[J].The Journal of Physical Chemistry C,2015,119(5):2798-2803.

TOYAMA T,TAKEUCHI H,YAMAGUCHI D,et al. Solution-processed ZnO nanocrystals in thin-film light-emitting diodes for printed electronics[J].Journal of Applied Physics,2010,108(8):084302.

TOYAMA T,KAWASAKI H,ITATANI K,et al. Top-emission ultraviolet-light-emitting diodes containing solution-processed ZnOnanocrystals[J].Applied Physics Express, 2011,4(6):065005.

OMATA T,TANI Y,KOBAYASHI S,et al. Ultraviolet electroluminescence from colloidal ZnO quantum dots in an all-inorganic multilayer light-emitting device[J].Applied Physics Letters, 2012,100(6):061104.

SON D I,YOU C H,KIM W T,et al. White light-emitting diodes fabricated utilizing hybrid polymer-colloidal ZnO quantum dots[J].Nanotechnology,2009,20(36):365206.

SON D I,KWON B W,PARK D H,et al. Emissive ZnO-graphene quantum dots for white-light-emitting diodes[J].Nature Nanotechnology,2012,7(7):465-471.

施周,贺英,蔡计杰,等.ZnO@GQDs核壳结构量子点的制备及性能研究[J].发光学报,2014,35(2):137-141.

SHI Z,HE Y,CAI JJ,et al. Synthesis and characterization of ZnO@Graphenequantum dots with core-shell structure[J].Chinese Journal of Luminescence,2014,35(2):137-141.(in Chinese)

CHEN J,PAN J Y,DU Q G,et al. Highly efficient white quantum dot light-emitting diode based on ZnO quantum dot[J].Applied Physics A,2014,117(2):589-591.

HUANG HH,DUN CC,HUANG W X,et al. Solution-processed yellow-white light-emitting diodes based on mixed-solvent dispersed luminescent ZnOnanocrystals[J].Applied Physics Letters, 2015,106(26):263506.

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