Atomic layer deposition (ALD) is considered as one of the most promising thin-film encapsulation technologies for flexible organic light-emitting diode (OLED) device because of high-quality films formed. In this work
different laminated structures of Al
2
O
3
/TiO
2
composite film were prepared at low temperature (80℃) by ALD method. The growth mechanism of Al
2
O
3
and TiO
2
film was studied. The water vapor barrier properties of the different stacked structures of composite Al
2
O
3
/TiO
2
thin film were studied by the calcium film
which were analyzed by water vapor transmission rate (WVTR) test and contact angle measurements. The WVTR of the 5 nm/5 nm8 dyads Al
2
O
3
/TiO
2
composite thin film was 2.110
-5
g/m
2
/day and the OLED devices encapsulated by this optimized Al
2
O
3
/TiO
2
structure exhibited better lifetime characteristics in high temperature and high humidity test.
关键词
Keywords
references
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