Effect of different dual gate design on A-Si:H TFT electrical characteristics

LIN Zhi-yuan; MA Jun; LIN Liang; YANG Cheng-shao; ZOU Zhi-xiang; HUANG Yin-hu; WEN Zhong-y

doi:10.3788/YJYXS20163105.0460

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Effect of different dual gate design on A-Si:H TFT electrical characteristics

Material and Device | 更新时间：2020-08-12

- Effect of different dual gate design on A-Si:H TFT electrical characteristics
- Chinese Journal of Liquid Crystals and Displays Vol. 31, Issue 5, Pages: 460-463(2016)
- 作者机构：
  
  合肥鑫晟光电科技有限公司,安徽合肥,230012
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20163105.0460
  CLC： TN873+.93
- Received：15 January 2016，
  
  Revised：21 February 2016，
  
  Published：05 May 2016
- 稿件说明：
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林致远, 马骏, 林亮等. 不同双栅极设计对a-Si:H TFT特性影响[J]. 液晶与显示, 2016,31(5): 460-463

LIN Zhi-yuan, MA Jun, LIN Liang etc. Effect of different dual gate design on A-Si:H TFT electrical characteristics[J]. , 2016,31(5): 460-463
林致远, 马骏, 林亮等. 不同双栅极设计对a-Si:H TFT特性影响[J]. 液晶与显示, 2016,31(5): 460-463 DOI： 10.3788/YJYXS20163105.0460.

LIN Zhi-yuan, MA Jun, LIN Liang etc. Effect of different dual gate design on A-Si:H TFT electrical characteristics[J]. , 2016,31(5): 460-463 DOI： 10.3788/YJYXS20163105.0460.

摘要

本实验于原有的单底栅a-Si TFT产品结构下

通过增加不同的顶栅极设计方式(不同a-Si覆盖比例、不同沟道几何形貌、不同沟道

W/L

比例)来研究双栅极设计对a-Si TFT特性的影响。实验结果显示双栅极a-Si TFT比现行单底栅a-Si TFT可以提升I

7%、降低SS 3%、同时对I

off

以及TFT稳定性影响不明显

显示双栅极a-Si TFT设计结构具有在不提高成本以及不变更工艺流程下

达到整体提升TFT特性的效果。顶栅极 TFT 特性不如底栅极

推测为a-Si/PVX界面不佳使得电子导通困难导致

未来可以借由改善a-Si/PVX界面工艺提升顶栅极TFT特性。

Abstract

Different TFT geometry design (top gate area coverage ratio

different channel shape and various W/L value) on dual gate a-Si TFT characteristics were investigated. Dual gate a-Si TFT shows better TFT characteristics than single bottom gate a-Si TFT with higher I

lower SS 3% and comparable I

off

and stress stability. Dual gate TFT structure is an economic way to improve a-Si TFT characteristic without production cost up and additional process flow modification.The characteristics of top gate TFT is worse than bottom gate TFT due to a worse a-Si/PVX interface than GI/a-Si interface and may be improved by modifying a-Si/PVX process.

关键词

Keywords

references

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VAN BERKEL C, POWELL M J. Photo-field effect in amorphous silicon thin-film transistors[J]. Journal of Applied Physics, 1986, 60(4):1521-1527.

SERVATI P, NATHAN A. Modeling of the reverse characteristics of a-Si:H TFTs[J]. IEEE Transactions on Electron Devices, 2002, 49(5):812-819.

SERVATI P, KARIM K S, NATHAN A. Static characteristics of a-Si:H dual-gate TFTs[J]. IEEE Transactions on Electron Devices, 2003, 50(4):926-932.

LIANG C Y, GAN F Y, YEH F S, et al. Letter:Mechanisms for on/off currents in dual-gate a-Si:H thin-film transistors using indium-tin-oxide top-gate electrodes[J]. Journal of the Society for Information Display, 2007, 15(11):975-978.

LIU Y, YAO R H, LI B,et al. A physical model based on surface potential for double-gate a-Si:H TFTs[C]. Proceedings of IEEE International Conference of Electron Devices and Solid-State Circuits, Xi'an, P.R. China:IEEE, 2009:75-78.

SPIJKMAN M J, MYNY K, SMITS EC P, et al. Dual-gate thin-film transistors, integrated circuits and sensors[J]. Advanced Materials, 2011, 23(29):3231-3242.

商广良,赵天月,赵星星,等. 低功耗TFT-LCD驱动方法[J]. 液晶与显示, 2012,27(6):785-788. SHANG G L, ZHAO T Y, ZHAO X X, et al. Driving method for low power consumption in TFT-LCDs[J]. Chinese Journal of Liquid Crystals and Displays, 2012, 27(6):785-788. (in Chinese)

LI X L, GENG D, MATIVENGA M, et al. Effect of bulk-accumulation on switching speed of dual-gate a-IGZO TFT-based circuits[J]. IEEE Electron Device Letters, 2014, 35(12):1242-1244.

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