Ag/Ti source/drain electrodes for amorphous InGaZnO thin flim transistors

WU Qi; XU Ling; DONG Cheng-yuan

doi:10.3788/YJYXS20163104.0375

您当前的位置：

首页 >

文章列表页 >

Ag/Ti source/drain electrodes for amorphous InGaZnO thin flim transistors

Material and Device | 更新时间：2020-08-12

- Ag/Ti source/drain electrodes for amorphous InGaZnO thin flim transistors
- Chinese Journal of Liquid Crystals and Displays Vol. 31, Issue 4, Pages: 375-379(2016)
- 作者机构：
  
  上海交通大学电子工程系TFT-LCD关键材料及技术国家工程实验室上海,200240
- 作者简介：
- 基金信息：
  
  Supported by National Natural Science Foundation of China(No. 61474075;No. 6113600
- DOI：10.3788/YJYXS20163104.0375
  CLC： TN321+.5
- Received：17 December 2015，
  
  Revised：31 December 2015，
  
  Published：05 April 2016
- 稿件说明：
移动端阅览
吴崎, 许玲, 董承远. 非晶铟镓锌氧薄膜晶体管银/钛源漏电极的研究[J]. 液晶与显示, 2016,31(4): 375-379

WU Qi, XU Ling, DONG Cheng-yuan. Ag/Ti source/drain electrodes for amorphous InGaZnO thin flim transistors[J]. , 2016,31(4): 375-379
吴崎, 许玲, 董承远. 非晶铟镓锌氧薄膜晶体管银/钛源漏电极的研究[J]. 液晶与显示, 2016,31(4): 375-379 DOI： 10.3788/YJYXS20163104.0375.

WU Qi, XU Ling, DONG Cheng-yuan. Ag/Ti source/drain electrodes for amorphous InGaZnO thin flim transistors[J]. , 2016,31(4): 375-379 DOI： 10.3788/YJYXS20163104.0375.

摘要

为了适应大尺寸高分辨率显示的技术需求

研究并开发用于非晶铟镓锌氧(a-IGZO)薄膜晶体管(TFT)阵列的低电阻电极非常关键。本文采用磁控溅射制备的金属银为源漏电极

设计并制作了底栅结构的a-IGZO TFT器件。实验发现

具有单层银源漏电极的器件电学特性较差

这是因为银与a-IGZO之间不能形成良好的欧姆接触。另一方面

通过增加钛中间层而形成的Ag/Ti电极在保持低电阻的同时能够有效阻止银原子扩散并与a-IGZO形成较好的接触状态。最终制备的以Ag/Ti为源漏电极的a-IGZO TFT具有明显改善的电学特性

场效应迁移率为1.73 cm

/Vs

亚阈值摆幅2.8 V/()

开关比为210

由此证明了磁控溅射制备的银电极具有应用于非晶氧化物薄膜晶体管的实际潜力。

Abstract

With the increasing requirements from large-size and high-resolution flat panel displays (FPDs)

it is necessary to investigate and develop the low-resistance electrodes for amorphous InGaZnO (a-IGZO) thin film transistors (TFTs). In this study

the inverted staggered a-IGZO TFTs using Ag as source/drain (S/D) electrodes were designed and fabricated by magnetron sputtering. It was found that the a-IGZO TFTs with single-layer Ag S/D electrodes exhibited poor performance due to the bad contact between Ag and a-IGZO. On the other hand

the Ag/Ti electrodes

formed by inserting a Ti film between Ag and a-IGZO

could effectively prevent Ag diffusion and form good contact with the active layers. In fact

the a-IGZO TFTs with Ag/Ti electrodes showed much better performance (field effect mobility of 1.73 cm

/Vs

subthreshold swing of 2.8 V/()

and on-off current ratio of 210

) than those of the a-IGZO TFTs with single-layer Ag source/drain electrodes

proving that Ag electrodes could be potentially used in amorphous oxide TFTs.

关键词

Keywords

references

NOMURA K, OHTA H, TAKAGI A, et al. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors[J]. Nature, 2004, 432(7016):488-492.

陈龙龙, 张建华, 李喜峰, 等. 基于柔性PI基底的氧化物IGZO TFT器件工艺及特性研究[J]. 液晶与显示, 2015, 30(5):796-800. CHEN L L, ZHANG J H, LI X F, et al. Process and properties of oxide IGZO TFT device based on flexible PI substrate[J]. Chinese Journal of Liquid Crystals and Displays, 2015, 30(5):796-800. (in Chinese)

刘翔, 薛建设, 贾勇, 等. 金属氧化物IGZO薄膜晶体管的最新研究进展[J]. 现代显示, 2010(10):28-32. LIU X, XUE J S, JIA Y, et al. The recent research progress of amorphous indium gallium zinc oxide thin film transistors[J]. Advanced Display, 2010(10):28-32. (in Chinese)

JEONG J, LEE G J, KIM J, et al. Electrical characterization of a-InGaZnO thin-film transistors with Cu source/drain electrodes[J]. Applied Physics Letters, 2012, 100(11):112109.

KIM W S, MOON Y K, LEE S, et al. Copper source/drain electrode contact resistance effects in amorphous indium-gallium-zinc-oxide thin film transistors[J]. Physica Status Solidi (RRL)-Rapid Research Letters, 2009, 3(7/8):239-241.

SHI J F, DONG C Y, DAI W J, et al. The influence of RF power on the electrical properties of sputtered amorphous In-Ga-Zn-O thin films and devices[J]. Journal of Semiconductors, 2013, 34(8):084003-1-084003-5.

UEOKA Y, ISHIKAWA Y, BERMUNDO J P, et al. Effect of contact material on amorphous InGaZnO thin-film transistor characteristics[J]. Japanese Journal of Applied Physics, 2014, 53(3S1):03CC04.

NASON T C, YANG G R, PARK K H, et al. Study of silver diffusion into Si (111) and SiO2 at moderate temperatures[J]. Journal of Applied Physics, 1991, 70(3):1392-1396.

TAI Y H, CHIU H L, CHOU L S.The deterioration of a-IGZO TFTs owing to the copper diffusion after the process of the source/drain metal formation[J]. Journal of the Electrochemical Society, 2012, 159(5):J200-J203.

MARTIN N, ROUSSELOT C, RONDOT D, et al. Microstructure modification of amorphous titanium oxide thin films during annealing treatment[J]. Thin Solid Films, 1997, 300(1/2):113-121.

YUN P S, NAITO M, KUMAGAI R, et al. P-23:the contact properties and TFT structures of a-IGZO TFTs combined with Cu-Mn alloy electrodes[J]. SID Symposium Digest of Technical Papers, 2011, 42(1):1177-1180.

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Effect of oxygen to argon ratio on the electrical performance of Ta₂O₅ gate dielectric thin film transistor

Oxide thin-film transistors based on printed double-layer electrodes

Properties of MoO_x thin films prepared by magnetron sputtering

Effect of annealing treatment on the performances of 40 nm thick p-ITO films prepared by DC magnetron sputtering

Effect of pretreatment of tray on hillock formation in pure Al films

Related Author

Xiao-tian YANG

Han-yue ZHANG

Fan YANG

Fu-nan LIU

Chao WANG

Yi-long LIN

Si-ting CHEN

Yong-bo WU

Related Institution

Jilin Normal University

Key Laboratory for Comprehensive Energy Saving of Cold Regions Architecture of Ministry of Education, Jilin Jianzhu University

Jilin Provincial Key Laboratory of Architectural Electricity & Comprehensive Energy Saving, School of Electrical Engineering and Computer Science, Jilin Jianzhu University

State Key Laboratory of Luminescent Materials and Devices, South China University of Technology

Hefei BOE Optoelectronics Technology Co., LTD.

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China 130033 Postal code：130033
Tel：0431-86176059 Email：yjxs@ciomp.ac.cn
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰