Effects of pixel ITO process on TFT characteristics of HADS product

LIN Zhi-yuan; YANG Cheng-shao; ZOU Zhi-xiang; CAO Bin-bin; HUANG Yin-hu; WEN Zhong-yuan; W

doi:10.3788/YJYXS20163104.0370

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Effects of pixel ITO process on TFT characteristics of HADS product

Material and Device | 更新时间：2020-08-12

- Effects of pixel ITO process on TFT characteristics of HADS product
- Chinese Journal of Liquid Crystals and Displays Vol. 31, Issue 4, Pages: 370-374(2016)
- 作者机构：
  
  合肥鑫晟光电科技有限公司,安徽合肥,230012
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20163104.0370
  CLC： TN873+.93
- Received：11 January 2016，
  
  Revised：17 January 2016，
  
  Published：05 April 2016
- 稿件说明：
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林致远, 杨成绍, 邹志翔等. ITO像素电极工序对于HADS产品TFT特性的影响[J]. 液晶与显示, 2016,31(4): 370-374

LIN Zhi-yuan, YANG Cheng-shao, ZOU Zhi-xiang etc. Effects of pixel ITO process on TFT characteristics of HADS product[J]. , 2016,31(4): 370-374
林致远, 杨成绍, 邹志翔等. ITO像素电极工序对于HADS产品TFT特性的影响[J]. 液晶与显示, 2016,31(4): 370-374 DOI： 10.3788/YJYXS20163104.0370.

LIN Zhi-yuan, YANG Cheng-shao, ZOU Zhi-xiang etc. Effects of pixel ITO process on TFT characteristics of HADS product[J]. , 2016,31(4): 370-374 DOI： 10.3788/YJYXS20163104.0370.

摘要

通过不同TFT几何结构验证ITO像素电极工序对于HADS产品TFT特性的影响。实验结果显示TN5mask与倒反HADS结构(源漏极ITO像素电极)二者有比现行HADS结构(ITO像素电极源漏极)更高的I

提升比率达到40%。推测主要原因为现行HADS结构(ITO像素电极源漏极)在Si岛完成后进行ITO像素电极工序增加了N

与源漏极之间接触阻抗导致I

降低。对于HADS产品

倒反HADS结构(源漏极ITO像素电极)可以具有更好的TFT特性表现。对现行HADS结构

在沟道形成工序前的N

表面ITO残沙程度越少则I

off

越低;对于倒反HADS结构

沟道形成之后沟道表面ITO残沙程度对则对TFT特性没有明显影响。对于Poole-Frenkel区域

现行HADS结构(ITO像素电极源漏极)比TN5mask与倒反HADS结构(源漏极ITO像素电极)二者较低I

off

[

=-20 V]

下降达50%

主要为N

与源漏极之间接触阻抗增加的影响。

Abstract

Effects of TFT structure on HADS product TFT properties was investigated. TN 5 mask and reversed HADS structure (SD pixel ITO) shows higher I

about 40% than current HADS structure (pixel ITO SD). The lower I

of current HADS structure (pixel ITO SD) may result from higher N+/SD contact resistance due to damaged N

surface result from pixel ITO process on N

surface. For current HADS structure

less ITO remain before channel formation leads to a lower I

off

while it shows no effect on TFT characteristic as ITO remain stays on formed channel for reversed HADS structure (SD pixel ITO). The current HADS structure shows a 50% lower Poole-Frenkel leakage current and lower Poole-Frenkel I-

slope than TN 5mask and reversed HADS structure (SD pixel ITO) also due to a higher N+/SD contact resistance.

关键词

Keywords

references

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