Improvement in TFT-LCD high temperature and light leakage current

JIANG Hui-gang; XIAO Hong-xi; WANG Yan-ming

doi:10.3788/YJYXS20163103.0283

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Improvement in TFT-LCD high temperature and light leakage current

Material and Device | 更新时间：2020-08-12

- Improvement in TFT-LCD high temperature and light leakage current
- Chinese Journal of Liquid Crystals and Displays Vol. 31, Issue 3, Pages: 283-289(2016)
- 作者机构：
  
  北京京东方光电科技有限公司北京,100176
- 作者简介：
- 基金信息：
  
  Supported by BOE Development Fund
- DOI：10.3788/YJYXS20163103.0283
  CLC： TN141.9
- Received：30 July 2015，
  
  Revised：25 November 2015，
  
  Published：05 March 2016
- 稿件说明：
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蒋会刚, 肖红玺, 王晏酩. TFT-LCD高温光照漏电流改善研究[J]. 液晶与显示, 2016,31(3): 283-289

JIANG Hui-gang, XIAO Hong-xi, WANG Yan-ming. Improvement in TFT-LCD high temperature and light leakage current[J]. , 2016,31(3): 283-289
蒋会刚, 肖红玺, 王晏酩. TFT-LCD高温光照漏电流改善研究[J]. 液晶与显示, 2016,31(3): 283-289 DOI： 10.3788/YJYXS20163103.0283.

JIANG Hui-gang, XIAO Hong-xi, WANG Yan-ming. Improvement in TFT-LCD high temperature and light leakage current[J]. , 2016,31(3): 283-289 DOI： 10.3788/YJYXS20163103.0283.

摘要

造成TFT不稳定的问题点一般认为有两种:一是沟道内半导体材料内部的缺陷

另一个是栅极绝缘层内的或是绝缘层与沟道层界面的电荷陷阱。TFT-LCD在长期运行时由于高温及光照的影响会导致漏电流增加

进而对TFT造成破坏。分析研究表明

TFT 沟道在刻蚀完成后

沟道内部存在一定的缺陷以及绝缘层与沟道层界面存在电荷陷阱

平面电场宽视角核心技术-高级超维场转换技术型产品由于设计的原因面临着如果进行氢处理会导致与其与氧化铟锡中的铟发生置换反应

导致铟的析出

所以无法采用氢处理。理论分析表明Si-O键稳定

本文主要介绍通过氯气/氧气和六氟化硫/氧气对TFT沟道进行处理改善高温光照漏电流。结果表明

通过氯气/氧气和六氟化硫/氧气处理TFT沟道后

高温光照漏电流从18.19 pA下降到5.1 pA

可见氯气/氧气和六氟化硫/氧气对沟道处理可有效改善高温光照漏电流。

Abstract

Generally speaking

the instability of TFT is caused by two key points: the defect of the semiconductor in channel

and the charge trap inside the gate insulating layer or between the channel layer and the gate insulating layer. During a long-time working of TFT-LCD

the leakage current will rise because of high temperature and light

which will result in a damage to the TFT-LCD. The recent research showed

that after the etching of channel

there are defect in channel and charge between the gate insulating layer and the channel layer. Because of its design

the ADS product faces a problem (the H takes place of the In of ITO during the H treatment)

which will result in the precipitation of In. So the H treatment can't be used in the ADS production. Theoretical analysis shows that the Si-O bond is much more stable. This article showed a way to decrease the leakage current (in light and high temperature) by using a treatment which contains two steps(the Cl

treatment and the SF

treatment).The result shows a very effective improvement of the leakage current

after the treatment to the channel part

the leakage current decreases from 18.19 pA to 5.1 pA.

关键词

Keywords

references

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