Pixel circuit for OLED-on-silicon microdisplay using a driving MOS transistor operated in saturation region

DAI Shuang; XIE Shan-shan; CHEN Xin; YANG Chun-cheng; ZHANG Jian; ZHAO Yi; LI Chuan-nan

doi:10.3788/YJYXS20163101.0097

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Pixel circuit for OLED-on-silicon microdisplay using a driving MOS transistor operated in saturation region

Driving and Controlling | 更新时间：2020-08-12

- Pixel circuit for OLED-on-silicon microdisplay using a driving MOS transistor operated in saturation region
- Chinese Journal of Liquid Crystals and Displays Vol. 31, Issue 1, Pages: 97-103(2016)
- 作者机构：
  
  吉林大学电子科学与工程学院集成光电子学国家重点联合实验室吉林大学实验区,吉林长春,130012
- 作者简介：
- 基金信息：
  
  Supported by National Natural Science Foundation of China(No.61177025,No.61275024)
- DOI：10.3788/YJYXS20163101.0097
  CLC： TN383.1
- Received：06 March 2015，
  
  Revised：12 November 2015，
  
  Published：05 January 2016
- 稿件说明：
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戴爽, 谢杉杉, 陈鑫等. 一种驱动MOS管工作在饱和区的硅基OLED微显示像素电路[J]. 液晶与显示, 2016,31(1): 97-103

DAI Shuang, XIE Shan-shan, CHEN Xin etc. Pixel circuit for OLED-on-silicon microdisplay using a driving MOS transistor operated in saturation region[J]. , 2016,31(1): 97-103
戴爽, 谢杉杉, 陈鑫等. 一种驱动MOS管工作在饱和区的硅基OLED微显示像素电路[J]. 液晶与显示, 2016,31(1): 97-103 DOI： 10.3788/YJYXS20163101.0097.

DAI Shuang, XIE Shan-shan, CHEN Xin etc. Pixel circuit for OLED-on-silicon microdisplay using a driving MOS transistor operated in saturation region[J]. , 2016,31(1): 97-103 DOI： 10.3788/YJYXS20163101.0097.

摘要

硅基OLED微显示中为了在极小的像素面积内实现微小的OLED工作电流

其像素驱动电路的驱动MOS管一般工作在亚阈值区

存在OLED电流对驱动MOS管的阈值电压和栅源电压失配敏感、外围电路复杂等问题

如果驱动MOS管工作在饱和区则可避免这些问题

但为了获得微小的驱动电流

必须采用尺寸大的倒比MOS管

这又与极小的像素面积冲突。本文提出了一种采用脉宽调制(PWM)技术、驱动MOS管工作在饱和区的OLED微显示像素驱动电路

PWM信号减少了一帧内OLED的实际工作时间

OLED的脉冲电流变大

使驱动MOS倒比管的尺寸减小;由于PWM信号占空比小

同时实现了OLED微小的平均像素驱动电流和亮度。结果表明PWM信号占空比为3%时

实现的OLED驱动电流和像素亮度范围分别为27 pA~2.635 nA、2.19~225.1 cd/m

同时采用双像素版图共用技术

在15m15m的像素面积内实现了像素驱动电路的版图设计。

Abstract

Due to the tiny pixel area of OLED-on-silicon microdisplay and the weak driving current

the driving MOS transistor operated in sub-threshold region is generally applied in the pixel driving circuit of OLED microdisplay. Unfortunately the sub-threshold current of MOS transistor is sensitive to the mismatch of threshold voltage and gate-source voltage and its peripheral circuit becomes complex

but a driving MOS transistor operated in saturation region instead of in sub-threshold region can avoid these problems. In this paper a pixel driving circuit for OLED microdisplay using the pulse width modulation (PWM) technique is proposed

in which the driving MOS transistor operates in saturation region

and the small average driving current and brightness are realized by shortening the operating time of OLED during a frame period. In the meanwhile the OLED pulse current is enlarged and the area of the MOS transistor operated in saturation region is decreased. The simulation results show that the average OLED current of the proposed PWM pixel driving circuit is from 27 pA to 2.635 nA

and the brightness of pixel is 2.19~225.1 cd/m

correspondingly. The layout of the pixel driving circuit on silicon is realized among the pixel size of 15m15m using double-pixel layout sharing technique.

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Keywords

references

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