In order to overcome the inconsistent contact area between SD line and P-Si caused by the difference of etching rate in via hole dry etching technology

as well as to solve the point contact between SD line and P-Si made by P-Si surface convex during the ELA process

we explored the influence of various via hole dry etching technology upon the property of TFT-LCD

so as to find the optimal via hole dry etching technology.Two different samples of LTPS array were prepared by using BOE production line equipment

wherein the sample 1 was prepared by adopting conventional Just Contact Method

while the sample 2 was prepared by adopting a new type of Side Contact Method. Besides the differences of contacting methods

there is no other differences of technological processes during making these two samples.The experimental results show that the multipoint

U-I

curve changes from a divergent curve to a concentration curve

and electron mobility increases in some degree. In addition

the SEM data show that the P-Si can be cut through completely by Side Contact Method. Side Contact Method is able to overcome the inconsistent contact area between SD line and P-Si caused by the difference of etching rate of via hole dry etching technology

as well as to solve the point contact between SD line and P-Si made by P-Si surface convex during the ELA process

so that the TFT-LCD electrical performance can be improved. In addition

the Side Contact Method can reduce the process time

and improve the productivity.