Impact of Bphen doping Cs2CO3 as electron transport layer on the performance of OLEDs

HU Jun-tao; CHENG Qun; YU Cheng-dong; YANG Jin-song; MEI Wen-juan; LU Hong-bo; WANG Jie-ran

doi:10.3788/YJYXS20153006.0943

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Impact of Bphen doping Cs₂CO₃ as electron transport layer on the performance of OLEDs

Device Physics & Device Technology | 更新时间：2020-08-12

- Impact of Bphen doping Cs₂CO₃ as electron transport layer on the performance of OLEDs
- Chinese Journal of Liquid Crystals and Displays Vol. 30, Issue 6, Pages: 943-948(2015)
- 作者机构：
  
  1. 合肥工业大学仪器科学与光电工程学院, 安徽合肥 230009
  2. 特种显示技术教育部重点实验室, 特种显示技术国家工程实验室, 现代显示技术省部共建国家重点实验室培育基地, 安徽合肥 230009
  3. 合肥工业大学光电技术研究院, 安徽合肥 230009
  4. 安徽华能电缆集团有限公司, 安徽无为 238371
- 作者简介：
- 基金信息：
  
  Supported by National High Technology Research and Development Program of China (Gra
- DOI：10.3788/YJYXS20153006.0943
  CLC： TN383+.1
- Received：31 March 2015，
  
  Revised：22 June 2015，
  
  Published：05 December 2015
- 稿件说明：
移动端阅览
胡俊涛, 程群, 余承东等. Bphen掺杂Cs2CO3作为电子传输层对OLED器件性能的影响[J]. 液晶与显示, 2015,30(6): 943-948

HU Jun-tao, CHENG Qun, YU Cheng-dong etc. Impact of Bphen doping Cs2CO3 as electron transport layer on the performance of OLEDs[J]. , 2015,30(6): 943-948
胡俊涛, 程群, 余承东等. Bphen掺杂Cs2CO3作为电子传输层对OLED器件性能的影响[J]. 液晶与显示, 2015,30(6): 943-948 DOI： 10.3788/YJYXS20153006.0943.

HU Jun-tao, CHENG Qun, YU Cheng-dong etc. Impact of Bphen doping Cs2CO3 as electron transport layer on the performance of OLEDs[J]. , 2015,30(6): 943-948 DOI： 10.3788/YJYXS20153006.0943.

摘要

为改善OLED器件的载子注入平衡

本文在其结构ITO/MoO

/NPB/Alq

/Cs

/Al中

分别引入高电子迁移率材料Bphen及Bphen:Cs

作为电子传输层。通过改变Bphen的厚度以及Bphen中Cs

的体积掺杂浓度

研究其对器件发光亮度、电流密度和效率等性能的影响。实验结果表明

采用Bphen或者Bphen:Cs

作为电子传输层

均能提高器件的电子注入能力

改善器件的性能。相比于未引入Bphen的器件

采用25 nm的Bphen作为电子传输层

改善了器件的电子注入

使器件的最大电流效率提高112%;采用体积掺杂浓度为15%

厚度为5 nm的Bphen:Cs

作为电子传输层

减小了电子注入势垒

使器件的最大电流效率提高27%

并且掺杂层厚度的改变对器件的电子注入影响很小。该方法可用于OLED器件的阴极修饰

对器件性能的提升将起到一定的促进作用。

Abstract

In order to improve the balance of carrier injection

a high electron mobility material Bphen and Bphen:Cs

are introduced in OLED devices respectively based on the structure of ITO/MoO

/NPB/Alq

/Cs

/Al. The experiments study the effect of Bphen and Bphen doping Cs

on the OLED devices of luminescence brightness

current density and efficiency by changing the thickness of Bphen and the volume concentration of Cs

doped in Bphen. Experimental results show that Bphen or Bphen:Cs

used as electron transport layer both can improve electronic injection and the performance of devices. Compared with the devices without Bphen

adding 25 nm thickness Bphen as electron transport layer can improve the device of electron injection

which increase the maximum current efficiency by 112%.Adding 5 nm thickness Bphen:Cs

(15% volume concentration doped) as electron transport layer can reduce the electron injection barrier

which increase the maximum current efficiency by 27%. However

changing the doping layer thickness has little impact on the device's electron injection. This method can be used in cathode decorate of OLED devices and play a certain role in promoting the devices' performance.

关键词

Keywords

references

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