Influence of ITO contamination of TFT gate insulation &amp; a-Si layers on electrical characteristics

WANG Shou-kun; YUAN Jian-feng; GUO Hui-bin; GUO Zong-jie; LI Sheng-xuan; SHAO Xi-bin

doi:10.3788/YJYXS20153006.0930

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Influence of ITO contamination of TFT gate insulation & a-Si layers on electrical characteristics

Device Physics & Device Technology | 更新时间：2020-08-12

- Influence of ITO contamination of TFT gate insulation & a-Si layers on electrical characteristics
- Chinese Journal of Liquid Crystals and Displays Vol. 30, Issue 6, Pages: 930-936(2015)
- 作者机构：
  
  北京京东方显示技术有限公司, 北京 100176
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20153006.0930
  CLC： TN321.5
- Received：06 March 2015，
  
  Revised：13 April 2015，
  
  Published：05 December 2015
- 稿件说明：
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王守坤, 袁剑峰, 郭会斌等. TFT栅极绝缘层和非晶硅膜层的ITO污染对电学特性影响的研究[J]. 液晶与显示, 2015,30(6): 930-936

WANG Shou-kun, YUAN Jian-feng, GUO Hui-bin etc. Influence of ITO contamination of TFT gate insulation & a-Si layers on electrical characteristics[J]. , 2015,30(6): 930-936
王守坤, 袁剑峰, 郭会斌等. TFT栅极绝缘层和非晶硅膜层的ITO污染对电学特性影响的研究[J]. 液晶与显示, 2015,30(6): 930-936 DOI： 10.3788/YJYXS20153006.0930.

WANG Shou-kun, YUAN Jian-feng, GUO Hui-bin etc. Influence of ITO contamination of TFT gate insulation & a-Si layers on electrical characteristics[J]. , 2015,30(6): 930-936 DOI： 10.3788/YJYXS20153006.0930.

摘要

本文对TFT在栅极绝缘层和非晶硅膜层沉积过程中

透明电极ITO成分对膜层的污染和TFT电学性质的影响进行分析研究。通过二次离子质谱分析和电学测试设备对样品进行分析。ITO成分会对PECVD设备、栅极绝缘层和非晶硅膜层产生污染

并会影响TFT的电学特性。建议采用独立的PECVD设备完成ITO膜层上面的栅极绝缘层和非晶硅膜层的沉积

并且对设备进行周期性清洗

可降低ITO成分的污染和提高产品的电学性能。

Abstract

Indium-tin-oxide (ITO) films as transparent conductive are applied on TFT.This paper studied the influence of ITO contamination of gate insulation & a-Si layers and TFT on electrical characteristics.The obtained samples were characterized by secondary ion mass spectroscopy (SIMS) and electronic parameter measurement (EPM).The result shown on the gate insulation & a-Si layers had been contaminated by ITO in the PECVD equipment

and the contamination can make TFT electrical characteristics become worse.ITO concentration in process equipments plays an important role in the TFT electrical characteristics.Therefore

we suggest the gate insulation & a-Si layers should be deposited in independent equipment and the PECVD equipment should be cleaned periodically. Thus

the ITO contamination can be reduced and TFT electrical characteristics can also be improved.

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Keywords

references

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Related Author

LIU Jie

ZHENG Yun-you

YUN Xiang-nan

Hui AN

Bin-bin CAO

Fang-fang LI

Cheng-zhi YE

Zeng-qian YANG

Related Institution

Process Development Department, BOE Display Technology Co. Ltd

HeFei XinSheng Optoelectronics Technology Co., Ltd.

Chongqing BOE Display Technology Co.， Ltd.

School of Optics and Photonics， Beijing Engineering Research Center of Mixed Reality and Advanced Display， Beijing Institute of Technology

Wuhan BOE Optoelectronics Technology Co., Ltd.

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Influence of ITO contamination of TFT gate insulation & a-Si layers on electrical characteristics

DOI：10.3788/YJYXS20153006.0930

摘要

Abstract

关键词

Keywords

references