Stability of P-type conductivity in nitrogen-doped MgZnO thin film

GAO Li-li; LI Song-fei; CAO Tian-fu; ZHANG Xue

doi:10.3788/YJYXS20153006.0925

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Stability of P-type conductivity in nitrogen-doped MgZnO thin film

Device Physics & Device Technology | 更新时间：2020-08-12

- Stability of P-type conductivity in nitrogen-doped MgZnO thin film
- Chinese Journal of Liquid Crystals and Displays Vol. 30, Issue 6, Pages: 925-929(2015)
- 作者机构：
  
  北华大学物理学院, 吉林吉林 132013
- 作者简介：
- 基金信息：
  
  Supported by Jilin Province Education Department "Twelfth Five-Year"
- DOI：10.3788/YJYXS20153006.0925
  CLC： O472
- Received：10 February 2015，
  
  Revised：07 March 2015，
  
  Published：05 December 2015
- 稿件说明：
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高丽丽, 李淞菲, 曹天福等. N掺杂MgZnO薄膜的p型导电稳定性研究[J]. 液晶与显示, 2015,30(6): 925-929

GAO Li-li, LI Song-fei, CAO Tian-fu etc. Stability of P-type conductivity in nitrogen-doped MgZnO thin film[J]. , 2015,30(6): 925-929
高丽丽, 李淞菲, 曹天福等. N掺杂MgZnO薄膜的p型导电稳定性研究[J]. 液晶与显示, 2015,30(6): 925-929 DOI： 10.3788/YJYXS20153006.0925.

GAO Li-li, LI Song-fei, CAO Tian-fu etc. Stability of P-type conductivity in nitrogen-doped MgZnO thin film[J]. , 2015,30(6): 925-929 DOI： 10.3788/YJYXS20153006.0925.

摘要

利用磁控溅射技术

以Mg

0.06

0.94

O为陶瓷靶材

制备了N掺杂p型Mg

0.1

0.8

O薄膜

薄膜的电阻率为42.45cm

载流子浓度为3.7010

/cm

迁移率为0.40 cm

-1

。研究了该薄膜p型导电性质在室温空气下随时间的变化情况。实验结果表明

薄膜的电阻率逐渐升高

载流子浓度降低

五个月以后

薄膜转变为n型导电

电阻率为85.58cm

载流子浓度为4.5310

/cm

迁移率为1.61 cm

-1

。真空热退火后重新转变为p型。结果显示

其p型导电类型的转变与在空气中吸附H

O或H

等形成浅施主有关。

Abstract

Using radio frequency magnetron sputtering

p-type N doped Mg

0.1

0.8

O film was deposited on quartz substrate with Mg

0.0

0.94

O target.The film has resistivity of 42.45cm

Hall mobility of 0.40 cm

-1

and carrier concentration of 3.7010

/cm

.The stability of p-type conductivity in this film preserved in room temperature air ambient was studied.It is found that the resistivity increased and the carrier concentration decreased with time.The film transformed from p-type to n-type semiconductor with resistivity of 85.58cm

Hall mobility of 1.61 cm

-1

and carrier concentration of 4.5310

/cm

after preservation for five months.The film transformed to p-type semiconductor again after thermal annealing under 10

-4

Pa.It can be deduced that

the p-type film reverts to n-type conductivity because hydrogen and water were adsorbed by film to create shallow donors in air ambient.

关键词

Keywords

references

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Related Institution

College of Physics, Beihua University

College of Physics, Jilin University

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Key Laboratory for Comprehensive Energy Saving of Cold Regions Architecture of Ministry of Education， Jilin Jianzhu University

School of Electrical and Computer Science， Jilin Jianzhu University

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