Effect of surface treatment on BM residue in TFT-LCD array substrate

ZHANG Feng; SHU Shi; QI Yong-lian; LIU Zhen

doi:10.3788/YJYXS20153006.0915

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Effect of surface treatment on BM residue in TFT-LCD array substrate

Material Physics & Chemistry | 更新时间：2020-08-12

- Effect of surface treatment on BM residue in TFT-LCD array substrate
- Chinese Journal of Liquid Crystals and Displays Vol. 30, Issue 6, Pages: 915-919(2015)
- 作者机构：
  
  京东方科技集团股份有限公司技术研发中心, 北京 100176
- 作者简介：
- 基金信息：
  
  Supported by Research Foundation of BOE Technology Group Co., LTD(No.2012057)
- DOI：10.3788/YJYXS20153006.0915
  CLC： O472+.1
- Received：10 April 2015，
  
  Revised：15 July 2015，
  
  Published：05 December 2015
- 稿件说明：
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张锋, 舒适, 齐永莲等. 表面处理对液晶显示阵列基板中黑矩阵残留的影响[J]. 液晶与显示, 2015,30(6): 915-919

ZHANG Feng, SHU Shi, QI Yong-lian etc. Effect of surface treatment on BM residue in TFT-LCD array substrate[J]. , 2015,30(6): 915-919
张锋, 舒适, 齐永莲等. 表面处理对液晶显示阵列基板中黑矩阵残留的影响[J]. 液晶与显示, 2015,30(6): 915-919 DOI： 10.3788/YJYXS20153006.0915.

ZHANG Feng, SHU Shi, QI Yong-lian etc. Effect of surface treatment on BM residue in TFT-LCD array substrate[J]. , 2015,30(6): 915-919 DOI： 10.3788/YJYXS20153006.0915.

摘要

主要分析了黑矩阵残留程度与SiN

、SiON、SiO

等基底表面亲水特性的关系

研究了等离子体处理对基底表面亲水特性以及黑矩阵残留的影响。首先

通过原子力显微镜和扫描电子显微镜对黑矩阵在不同基底表面的残留颗粒大小、表面粗糙度进行了测试。然后

使用接触角测试仪对不同基底表面的亲水特性进行了表征

分析了表面亲水特性和黑矩阵残留程度的关系。最后

研究了等离子体处理条件对基底表面亲水特性的影响

提出了采用O

/He等离子体对基底表面进行改性来解决黑矩阵的残留问题。实验结果表明:基底表面的水接触角越小、亲水性越强

黑矩阵在基底表面的残留越少;O

/He等离子体表面处理使基底表面的水接触角从17降低到3

增强了基底表面的亲水特性

并且黑矩阵工艺之后基底表面的粗糙度从3.06 nm降低到0.69 nm

消除了黑矩阵的残留。

Abstract

The effect of plasma surface treatment on black matrix (BM) residue and substrate hydrophilicity is investigated in order to improve display performance of TFT-LCD with BM on array (BOA) structure.The size of remained BM particles and surface roughness are characterized by atom force microscope (AFM) and scanning electron microscope (SEM).Water contact angle and hydrophilicity of substrate are measured by the contact angle instrument

which gives the correlation between hydrophilicity and BM residue.Finally

the effect of O

and He plasma surface treatment on BM residue is investigated.Experimental results indicate that the smaller water contact angle means the better hydrophilic and the less BM residue.After treatment with O

and He plasma

the water contact angle of substrate is decreased from 17to 3and the surface roughness is decreased from 3.06 nm to 0.69 nm after BM process.AFM morphology images show that BM residue is completely eliminated from the substrate.

关键词

Keywords

references

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