Process and properties of oxide IGZO TFT device based on flexible PI substrate

CHEN Long-long; ZHANG Jian-hua; LI Xi-feng; SHI Ji-feng; SUN Xiang

doi:10.3788/YJYXS20153005.0796

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Process and properties of oxide IGZO TFT device based on flexible PI substrate

Device Physics & Device Technology | 更新时间：2020-08-12

- Process and properties of oxide IGZO TFT device based on flexible PI substrate
- Chinese Journal of Liquid Crystals and Displays Vol. 30, Issue 5, Pages: 796-800(2015)
- 作者机构：
  
  上海大学新型显示技术及应用集成教育部重点实验室上海,200072
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20153005.0796
  CLC： TN321.5
- Received：06 November 2014，
  
  Revised：15 February 2015，
  
  Published：05 October 2015
- 稿件说明：
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陈龙龙, 张建华, 李喜峰, 石继锋, 孙翔. 基于柔性PI基底的氧化物IGZO TFT器件工艺及特性研究[J]. 液晶与显示, 2015,30(5): 796-800

CHEN Long-long, ZHANG Jian-hua, LI Xi-feng, SHI Ji-feng, SUN Xiang. Process and properties of oxide IGZO TFT device based on flexible PI substrate[J]. , 2015,30(5): 796-800
陈龙龙, 张建华, 李喜峰, 石继锋, 孙翔. 基于柔性PI基底的氧化物IGZO TFT器件工艺及特性研究[J]. 液晶与显示, 2015,30(5): 796-800 DOI： 10.3788/YJYXS20153005.0796.

CHEN Long-long, ZHANG Jian-hua, LI Xi-feng, SHI Ji-feng, SUN Xiang. Process and properties of oxide IGZO TFT device based on flexible PI substrate[J]. , 2015,30(5): 796-800 DOI： 10.3788/YJYXS20153005.0796.

摘要

讨论了基于柔性PI基底上的底栅型TFT器件工艺

通过工艺优化解决了双层结构干刻速率不同造成的下切角形状。本文TFT器件是基于氧化物IGZO为有源层

栅绝缘层采用Si

/SiO

双层结构

采用两次补偿曝光、干刻方式消除干刻引入的下切角形状

有效解决了薄膜沉积引入的断线风险。实验结果表明

经过SEM断面观察

干刻后双层结构taper角度适合TFT器件后续沉膜条件

柔性基底上制作的TFT器件迁移率达到14.8 cm

/(Vs)

阈值电压

约0.5 V

亚域值摆幅SS约0.5 V/decade

TFT器件的开关比

off

。通过此方法制作出的器件性能良好

满足LCD、OLED或电子纸的驱动要求。

Abstract

Bottom-gate structure TFT device technology on flexible PI substrate was discussed in the paper. Undercut shape of the double layer caused by the different dry etching rate was solved by the improvement of technics. The TFT device was based on IGZO as active layer

and Si

/SiO

double layer structure was employed as gate insulator

undercut shape introduced thin film deposition break risk was effectively solved using two times of exposure compensation. The experimental results show that

the taper angle of double-layer structure after dry etching which was observed using SEM was suitable for following film deposition of TFT devices. The mobility of TFT on flexible PI substrate reaches 14.8 cm

/(Vs)

threshold voltage of

is about 0.5 V

subthreshold swing (SS) is about 0.5 V/decade

and ratio of

off

is upper 10

. TFT device performance by this method is good

and meets the driving requirements of LCD

OLED or electronic paper.

关键词

Keywords

references

Wu C C, Theiss S D, Gu G,et al. Integration of organic LED's and Amorphous Si TFT's onto flexible and lightweight metal foil substrates[J]. IEEE ELECTRON DEVICE LETTERS, 1997, 18(12):609-612.[2] Zhou L S,Wanga A, Wu S C, et al. All-organic active matrix flexible display[J]. Applied Physics Letters, 2006,88(8):083502.[3] Jeong J K, Jin D U, Shin H S, et al. Flexible full-color AMOLED on ultrathin metal foil[J]. Ieee Electron Device Letters, 2007, 28(5):389-391.[4] Plichta A, Weber A. Ultra-thin flexible glass substrates[C]. Proc. Mater. Res. Soc. Symp., 2003,769:H9.1-H9.10.[5] Cheng I C, Kattamis A, Wagner S. Stress control for overlay registration in a-Si:H TFTs on flexible organicpolymer-foil substrates[J]. J. Soc. Inf. Display, 2005, 13(7):563-568.[6] Choi M H, Kim B S, Jang J. High-performance flexible TFT circuits using TIPS pentacene and polymer Blend on Plastic[J]. Ieee Electron Device Letters, 2012, 33(1):1571-1573.[7] Lim W, Jang J H, Kim S H, et al. High performance indium gallium zinc oxide thin film transistors fabricated on polyethylene terephthalate substrates[J]. Applied Physics Letters, 2008,93:082102.[8] Chen C, Abe K, Kumomi H, et al. Density of states of a-InGaZnO from temperature-dependent field-effect studies[J]. Ieee Transactions On Electron Devices, 2009, 56(6):1177-1183.[9] Hsu H H, Chang C Y, Cheng C H, et al. Fully room-temperature IGZO thin film transistors adopting stacked gate dielectrics on flexible polycarbonate substrate[J]. Solid-State Electronics, 2013, 89:194-197.[10] Liu C,Wei M,Yang F,et al. Effects of electrode materials on the performances of IGZO-based thin film transistor[J]. Chinese Journal of Luminescence, 2014, 35(11):1365-1369.[11] Jia T Y, Zhan R Z, Dong C Y. Simulation of the stability of a-IGZO TFT-OLED pixel circuits[J]. Chinese Journal of Luminescence, 2013, 34(9):1240-1244.

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