Final critical dimension measuring method about TFT-LCD array process

LIU Yao; CHEN Xi; ZHANG Xiao-xiang; LIU Xiao-wei; LI Liang-liang; DING Xiang-qian; GUO Zon

doi:10.3788/YJYXS20153005.0784

您当前的位置：

首页 >

文章列表页 >

Final critical dimension measuring method about TFT-LCD array process

Device Physics & Device Technology | 更新时间：2020-08-12

- Final critical dimension measuring method about TFT-LCD array process
- Chinese Journal of Liquid Crystals and Displays Vol. 30, Issue 5, Pages: 784-789(2015)
- 作者机构：
  
  北京京东方显示技术有限公司北京,中国,100176
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20153005.0784
  CLC： TN307
- Received：20 January 2015，
  
  Revised：06 February 2015，
  
  Published：05 October 2015
- 稿件说明：
移动端阅览
刘耀, 陈曦, 张小祥, 刘晓伟, 李梁梁, 丁向前, 郭总杰, 袁剑峰. 薄膜晶体管液晶显示器阵列工艺最终关键尺寸测试方法研究[J]. 液晶与显示, 2015,30(5): 784-789

LIU Yao, CHEN Xi, ZHANG Xiao-xiang, LIU Xiao-wei, LI Liang-liang, DING Xiang-qian, GUO Zong-jie, YUAN Jian-feng. Final critical dimension measuring method about TFT-LCD array process[J]. , 2015,30(5): 784-789
刘耀, 陈曦, 张小祥, 刘晓伟, 李梁梁, 丁向前, 郭总杰, 袁剑峰. 薄膜晶体管液晶显示器阵列工艺最终关键尺寸测试方法研究[J]. 液晶与显示, 2015,30(5): 784-789 DOI： 10.3788/YJYXS20153005.0784.

LIU Yao, CHEN Xi, ZHANG Xiao-xiang, LIU Xiao-wei, LI Liang-liang, DING Xiang-qian, GUO Zong-jie, YUAN Jian-feng. Final critical dimension measuring method about TFT-LCD array process[J]. , 2015,30(5): 784-789 DOI： 10.3788/YJYXS20153005.0784.

摘要

最终关键尺寸是评价薄膜晶体管液晶显示器产品性能的一项重要参数。本文研究了在光源照度变化的条件下得到准确的最终关键尺寸的方法。通过大量的实验测试、数据分析

并配合扫描电子显微镜(SEM)图片

确定最终关键尺寸合适的测试条件和方法。基于上述分析

选取测量值稳定的光照强度区间中心点的光照强度作为标准样品参照值

选取此时样品测试图片作为标准图片。测试结果与SEM结果进行对比

得到不同膜层测量值和真实值之间的补偿值。并通过不同尺寸产品的数据收集和分析来验证补偿值的可靠性。通过上述方法

可以极大地缩短最终关键尺寸测量的校正周期

并为今后新产品开发提供可靠的测试标准。

Abstract

Final inspection critical dimension (FICD) is an important parameter to evaluate the performance of thin film transistor liquid crystal display (TFT-LCD) products. The method to obtain an accurate FICD data was studied in this paper. By a large number of experimental data and the scanning electron microscope (SEM) images

test conditions and methods were determined. Based on the above analysis

the center of illumination intensity which could provide stable measuring results was selected as the reference value

and the image was collected as golden sample simultaneously. By contrasting the above results and SEM results

the compensation value of the different layers between measured value and true value were obtained. Also the reliability was proved by data analysis of different sizes of products. As a result

calibration period of FICD measurement could be reduced greatly

and reliable test standard was provided for future products.

关键词

Keywords

references

杨晓萍.京东方TFT-LGD竞争策略研究[D].北京:对外经济贸易大学,2012. Yang X P. Competition strategy research on the TFT-LCD industry of BOE [D]. Beijing:University of International Business and Economics, 2012. (in Chinese)[2] 吴凌剑.TFT-LCD面板行业竞争策略研究-以A公司为例[D].苏州:苏州大学,2013. Wu L J. The developing strategy for TFT-LCD manufacturer-a case study for A company[D]. Suzhou:Soochow University, 2013. (in Chinese)[3] 李联益.TFT-LCD液晶显示技术与应用[J].韶关学院学报,2012, 33(4):46-49. Li L Y. TFT-LCD liquid crystal display technology and application[J]. Journal of Shaoguan University, 2014, 33(4):46-49. (in Chinese)[4] 黎午升,惠官宝,崔承镇,等.在镜像投影曝光机上使用相移掩膜提高解像力的初步研究[J].液晶与显示,2014, 29(4):544-547. Li W S, Hui G B, Cui C Z, et al. Preliminary study on improving resolution on mirror projection mask aligner with phase shift mask[J]. Chinese Journal of Liquid Crystals and Displays, 2014, 29(4):544-547. (in Chinese)[5] Chun J, Kang Ch, Ahn S, et al. a-Si TFT-LCD mobile display with high pixel density using pentile RGBWTM algorithm[J]. Chinese Journal of Liquid Crystals and Displays, 2006, 21(5):474-477.[6] Leea J H, Kim Y S, Kim S R, et al. Real-time application of critical dimension measurement of TFT-LCD Pattern using a newly proposed 2D image-processing algorithm[J]. Optics and Lasers in Engineering, 2010, 46:558-569.[7] Vassilios Co, Vijaya-Kumar M, Evangelos Go. Effects of image noise on contact edge roughnses and critical dimension uniformity measurement in synthesized scanning electron microscope images[J]. Journal of micro/nanolithography, MEMS, and MOEMS:JM3, 2013, 12(1):5-13.[8] Vladimir U, Bill B. Review of reference metrology for nanotechnology:significance, challenges, and solutions[J]. Journal of Micro/Nanolithography, MEMS, and MOEMS:JM3, 2012, 11(1):10-11.[9] Sung-Hoon P, Tai-Wook K, Jeong-Ho L, et al. Real-time critical dimension measurement of thin film transistor liquid crystal display patterns using optical coherence tomography[J]. Journal of Electronic Imaging, 2014, 23(1):1-13.

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

No data

Related Author

No data

Related Institution

No data

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China 130033 Postal code：130033
Tel：0431-86176059 Email：yjxs@ciomp.ac.cn
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰