Tang Y J, Cui H Q, Liu J,et al. Premeditate display quality of FFS-LCD using negative LC by DC stress [C].IDW'14,2014:70-72.[2] Kanicki, Jerzy.Amorphous and Microcystalline Semiconductor Devices [M].Materials and Device Physics.Artech House, Inc.,1992.[3] 戴亚翔,田民波.TFT LCD面板的驱动与设计 [M].北京:清华大学出版社,2008. Dai Y X.Design and Operation of TFT LCD Panels [M].Beijing: Tsinghua University Press, 2008.(in Chinese)[4] 谢振宇,龙春平,邓朝勇,等. 高速沉积氮化硅薄膜对其化学键及其性能的影响 [J]. 液晶与显示, 2007,22(1):26-31. Xie Z Y, Long C P, Deng C Y, et al. Effect of high deposition rate on chemical bonds and properties of SiN film [J].Chinese Journal of Liquid Crystals and Displays,2007,22(1): 26-31.(in Chinese)[5] 王守坤,孙亮,郝昭慧,等. 基板支撑梢对TFT栅界面Nx和a-Si成膜特性的影响 [J]. 液晶与显示, 2012,27(5):613-617. Wang S K, Sun L, Hao Z H, et al.Pin effect on SiNx and a-Si layer of thin film transistor [J].Chinese Journal of Liquid Crystals and Displays, 2012,27(5):613-617.(in Chinese)[6] 朴勇,梁宏军,高鹏,等. 沉积参数对碳氮化硅薄膜化学结构及光学性能的影响 [J]. 应用光学,2006,27(4):274-281. Piao Y, Liang H J, Gao P, et al. The influence of deposition structure and optical properties parameters on chemical of silicon carbonitride film [J].Journal of Applied Optics, 2006,27(4):274-281.(in Chinese)[7] 张金中,张文余,谢振宇,等. 栅极绝缘层工艺优化对氢化非晶硅TFT特性的改善 [J]. 真空科学与技术,2012,32(11):991-995. Zhang J Z,Zhang W Y, Xie Z Y, et al. Growth and optimization of hydrogenated amorphous Si films for thin film transistor fabrication [J].Journal of Vacuum Science and Technology, 2012,32(11):991-995.(in Chinese)[8] 王长安,周雪梅,张少强,等. 一种能有效抑制背光照影响的非晶硅薄膜晶体管 [J]. 半导体光电, 2000,21(2):100-103. Wang C A, Zhou X M, Zhang S Q, et al.Amorphous Silicon thin film transistor structure for effectively suppressing backlight illumination effect [J].Semiconductor Optoelectronics,2000,21(2):100-103.(in Chinese)[9] Wronski C R.Intrinsic and light induced gap states in a-Si:H materials and solar cells [J].Effects of Microstructure, Thin Solid Films, 2004,451-452:470-475.[10] Kaushik R, Kiat Seng Y.Low Voltage, Low Power VLSI Subsystems [M].McGraw-Hill Professional, 2004.