Effect of film layer on photoresist ashing

BAI Jin-chao; ZHANG Guang-ming; GUO Zong-jie; ZHENG Yun-you; YUAN Jian-feng; SHAO Xi-bin

doi:10.3788/YJYXS20153004.0616

您当前的位置：

首页 >

文章列表页 >

Effect of film layer on photoresist ashing

更新时间：2020-08-12

- Effect of film layer on photoresist ashing
- Chinese Journal of Liquid Crystals and Displays Vol. 30, Issue 4, Pages: 616-620(2015)
- 作者机构：
  
  北京京东方显示技术有限公司北京,中国,100176
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20153004.0616
  CLC： TN141.9
- Received：16 November 2014，
  
  Revised：18 December 2014，
  
  Published：05 August 2015
- 稿件说明：
移动端阅览
白金超, 张光明, 郭总杰, 郑云友, 袁剑峰, 邵喜斌. 各膜层对光刻胶灰化的影响[J]. 液晶与显示, 2015,30(4): 616-620

BAI Jin-chao, ZHANG Guang-ming, GUO Zong-jie, ZHENG Yun-you, YUAN Jian-feng, SHAO Xi-bin. Effect of film layer on photoresist ashing[J]. , 2015,30(4): 616-620
白金超, 张光明, 郭总杰, 郑云友, 袁剑峰, 邵喜斌. 各膜层对光刻胶灰化的影响[J]. 液晶与显示, 2015,30(4): 616-620 DOI： 10.3788/YJYXS20153004.0616.

BAI Jin-chao, ZHANG Guang-ming, GUO Zong-jie, ZHENG Yun-you, YUAN Jian-feng, SHAO Xi-bin. Effect of film layer on photoresist ashing[J]. , 2015,30(4): 616-620 DOI： 10.3788/YJYXS20153004.0616.

摘要

研究各膜层对灰化速率的影响

增强对灰化工艺的了解

为四次光刻工艺改善提供参考。采用探针台阶仪测量在相同灰化条件下不同膜层样品的灰化速率和有源层损失量

对结果进行机理分析和讨论。实验结果表明:有源层会降低灰化速率

源/漏金属层可以增大灰化速率

栅极金属层对灰化速率无影响。对于正常膜层结构的阵列基板

源/漏层图形密度越大

灰化速率越小

图形密度每增大1%

灰化速率下降14 nm/min。有源层和源/漏金属层对灰化等离子体产生影响

从而影响灰化速率。

Abstract

In order to enhance understanding of photoresist ashing and give reference to 4 mask process improvement

the effect of each film layer on photoresist ashing was researched.In the same ashing process condition

ashing rate of samples with different film layer was measured by -step profiler

and the mechanism of test result was analysed.Experimental results indicate that a-Si can decrease ashing rate

SD metal can increase ashing rate

gate metal has no effect on the ashing rate.And for normal film structure TFT array substrate

the bigger SD pattern density is

the smaller ashing rate will be. If SD pattern density increased 1%

ashing rate would decreased 14 nm/min.Because of influence on ashing plasma

a-Si and SD metal have an effect on ashing rate.

关键词

Keywords

references

王玉如. 液晶显示技术的最新进展 [J]. 现代电子技术,2004,27(22):85-87. Wang Y R.The new development of TFT-LCD [J].Chinese Journal of Modern Electronics Techique, 2004, 27(22): 85-87.(in Chinese)[2] Kai Y U.TFT-LCDs as the future leading role in FPD [C]//Process of the International Workshop on the Physics of Semiconductor Devices, Kobe: Ukai Display Device Institute, 2007: 29-34.[3] 王亮,王文青,李鑫,等. 增强型等离子体耦合干法刻蚀条件对PR胶灰化的影响 [J]. 液晶与显示, 2012, 27(2):204-207. Wang L, Wang W Q, Li X, et al. Effects of PRashing in process of enhanced capacitive coupled plasma etch [J].Chinese Journal of Liquid Crystals and Displays, 2012, 27(2): 204-207.(in Chinese)[4] Song J H, Kwon D J, Kim S G.Advance four-mask process architecture for the a-Si TFT array manufacturing method [J].SID Symposium Digest of Technical Paper, 2002, 3(1): 1038-1041.[5] 刘翔,王章涛,崔祥彦,等. 液晶阵列四次光刻工艺中光刻胶灰化工艺的研究 [J]. 真空科学与技术学报,2008,28(4):291-293. Liu X,Wang Z T, Cui X Y, et al. Photoresist ashing in four-mask fabrication of thin film transistor crystal liquid [J].Chinese Journal of Vacuum Science and Technology, 2008, 28(4): 291-293.(in Chinese)[6] 蒋冬华,李淳东,李炳天. TFT-LCD制造工艺中金属残留的解决方案 [J]. 液晶与显示, 2011,26(2):170-173. Jiang D H, Li C D, Li B T.Solution formetal remain in TFT-LCD manufacturing process [J].Chinese Journal of Liquid Crystals and Displays, 2011, 26(2): 170-173.(in Chinese)[7] 郑载润,郑云友,侯智,等. O2/SF6混合气体对光刻胶的离子刻蚀研究 [J]. 现代显示, 2007(10):41-44. Zheng Z R, Zheng Y Y, Hou Z, et al. Research on reactive ion etching of PR in O2/SF6 mixtures [J].Chinese Journal of Advanced Display, 2007(10): 41-44.(in Chinese)[8] 荀本鹏. 大尺寸面板液晶显示屏阵列工艺中的金属钼刻蚀研究 [D].成都:电子科技大学,2007:62-70. Xun B H.Large size liquid crystal display panel array of molybdenum metal etching research [D].Chendu:University of Electronic Science and Technology, 2007: 62-70.(in Chinese)[9] 徐大林,丁欣,侯智,等. O2/SF6气氛下光刻胶灰化反应的机理研究 [J]. 真空科学与技术学报,2012,32(12):1109-1113. Xu D L, Ding X, Hou Z, et al. Ashing mechanism of photo-resist in oxygen-sulfur hexafluoride mixtures [J].Chinese Iournal of Vacuum Science and Technology,2012, 32(12): 1109-1113.(in Chinese)

Views

172

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Improvement of sublimation in color film pre-baking process by optimizing the photoresist composition

Mechanism analysis and improvement of TFT-LCD green Mura

Remain of photoresist in halftone process based on TFT-LCD technology

Preventing method of film residue in PR ashing process based on ICP etcher

VOCs emission characteristics and treatment effect of TFT-LCD manufacturing industry

Related Author

Xue-song GAO

Qin-rui QI

Peng ZHOU

Qian JIANG

Run CHEN

Chao-hua LU

Peng ZHOU

Yi-lin DIAO

Related Institution

Chengdu CEC Panda Display Technology Co., Ltd.

HeFei XinSheng Optoelectronics Technology Co., Ltd.

Hefei BOE Display Technology Co., Ltd.

Chongqing BOE Optoelectronics Technology Co., Ltd.

Hefei BOE Optoelectronics Technology Co. Ltd

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China 130033 Postal code：130033
Tel：0431-86176059 Email：yjxs@ciomp.ac.cn
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰