Influence of fabrication process on performance of polymeric thin-film transistor

XIE Ying-tao; OUYANG Shi-hong; WANG Dong-ping; ZHU Da-long; XU Xin; FONG Hon-hang

doi:10.3788/YJYXS20153003.0427

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Influence of fabrication process on performance of polymeric thin-film transistor

Device Physics & Device Technology | 更新时间：2020-08-12

- Influence of fabrication process on performance of polymeric thin-film transistor
- Chinese Journal of Liquid Crystals and Displays Vol. 30, Issue 3, Pages: 427-431(2015)
- 作者机构：
  
  1. 上海交通大学电子工程系上海,200240
  2. TFT-LCD关键材料及技术国家工程实验室上海,200240
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20153003.0427
  CLC： TN321.5
- Received：18 December 2014，
  
  Revised：09 January 2015，
  
  Published Online：18 December 2014，
  
  Published：05 June 2015
- 稿件说明：
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谢应涛, 欧阳世宏, 王东平, 朱大龙, 许鑫, 方汉铿. 聚合物薄膜晶体管制备条件对其性能影响分析[J]. 液晶与显示, 2015,30(3): 427-431

XIE Ying-tao, OUYANG Shi-hong, WANG Dong-ping, ZHU Da-long, XU Xin, FONG Hon-hang. Influence of fabrication process on performance of polymeric thin-film transistor[J]. , 2015,30(3): 427-431
谢应涛, 欧阳世宏, 王东平, 朱大龙, 许鑫, 方汉铿. 聚合物薄膜晶体管制备条件对其性能影响分析[J]. 液晶与显示, 2015,30(3): 427-431 DOI： 10.3788/YJYXS20153003.0427.

XIE Ying-tao, OUYANG Shi-hong, WANG Dong-ping, ZHU Da-long, XU Xin, FONG Hon-hang. Influence of fabrication process on performance of polymeric thin-film transistor[J]. , 2015,30(3): 427-431 DOI： 10.3788/YJYXS20153003.0427.

摘要

基于溶液法制备稠合噻吩-吡咯并吡咯二酮聚合物薄膜晶体管

比较不同制备环境下的薄膜晶体管的转移特征曲线.结果表明

旋涂环境对聚合物薄膜晶体管的影响可以忽略

但是退火环境对聚合物薄膜晶体管的影响至关重要

从饱和迁移率角度来看

在惰性环境下退火的器件的饱和迁移率是在空气中退火的器件的两倍多.无论退火温度是100℃低温情况还是190℃高温情况

上述结论均适用.这一结果表明退火环境对器件的影响至关重要.

Abstract

Based on soluble polymeric thin-film transistor

the characteristics of organic thin-film transistors (OTFTs) with various fabrication processing conditions were compared. The results demonstrated that the characteristic of OTFTs isn't almost influenced by spin-coating with air or N

atmosphere

yet it is seriously influenced by annealing with air or N

atmosphere. From the point of field-effect mobility

it demonstrated that the mobility of OTFT devices with annealing in N

atmosphere is more than two times as much as that with annealing in air

when the annealing temperature is the range from 100 ℃ to 190 ℃.

关键词

Keywords

references

Hamadani B H, Gundlach D J. McCulloch I, et al. Undoped polythiophene field-effect transistors with mobility of 1 cm2V-1s-1 [J]. Appl. Phys. Lett., 2007, 91: 243512(1-3).[2] Wang S, Kappl M, Liebewirth I, et al. Organic field-effect transistors based on highly ordered single polymer fibers [J]. Adv. Mater., 2012,24: 417-420.[3] Fujisaki Y, Nakajima Y, Takei T, et al. Flexible active-matrix organic light-emitting diode display using air-stable organic semiconductor of dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]-thiophene [J]. IEEE Tran. Elec. Dev., 2012 59: 3442-3449.[4] Jang J. Displays develop a new flexibility [J]. Mater. Today, 2006,9: 46-52.[5] Steudel S, Myny K, Schols S, et al. Design and realization of a exible QQVGA AMOLED display with organic TFTs [J]. Org. Electron., 2012,13: 1729-1735.[6] Ryu G S, Kim J S, Jeong S H, et al. A printed OTFT-backplane for AMOLED display [J]. Org. Electron., 2013,14: 1218-1224.[7] Matthews J R, Niu W, Tandia A, et al. Scalable synthesis of fused thiophene-diketopyrrolopyrrole semiconducting polymers processed from nonchlorinated solvents into high performance thin film transistors [J]. Chem. Mater., 2013,25: 782-789.[8] Gundlach D J, Zhou L, Nichols J A, et al. An experimental study of contact effects in organic thin film transistors [J]. J. Appl. Phys., 2006,100: 024509(1-13).

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