Chang T T, Hsun C L, Chang S M, et al. Gate driver on array of a display, US:US 2011/0018001 Al [P]. 2011-01-27.[2] Chang L H. Gate driver on array structure and display, US: US 786835 7 B2 [P]. 2011-01-11.[3] 刘士奎, 王超, 杨雪, 等. 液晶显示领域之GOA技术专利分析[J]. 中国发明与专利, 2013 (6): 21-28. Liu S K, Wang C, Yang X,et al. The analysis of GOA technology patent in Liquid crystal display [J]. China Invention & Patent, 2013 (6): 21-28.[4] Yoon S Y, Jang Y H, Kim B, et al. Highly stable integrated gate driver circuit using a-Si TFT with dual pull-down structure [J]. SID Digest, 2005, 5(1): 348-351.[5] Lin C L, Cheng M H, Wu C E, et al. An Integrated a-Si:H gate driver circuit design for large-sized TFT-LCD applications [J]. SID Digest, 2013, 13(1): 1007-1009.[6] Hu Z J, Liao C W, Li J M, et al. A-Si:H TFT gate driver with shared dual pull-down units for large-sized TFT-LCD applications [J]. SID Digest, 2014, 12(1): 986-989.[7] 周伟峰, 薛建设, 金基用,等. 不同狭缝与遮挡条设计对TFT特性的影响与规律[J]. 液晶与显示, 2011, 26(2):165-169. Zhou W F, Xue J S, Jin J Y, et al. Effects and regularity of different slit & bar design on TFT Characteristics [J].Chinese Journal of Liquid Crystals and Displays, 2011, 26(2):165-169.(in Chinese)[8] 李欣欣, 龙春平, 王威. TFT-LCD工艺与静电击穿[J]. 现代显示, 2007(4): 59-63. Li X X, Long C P, Wang W. TFT-LCD Process and ESD [J]. Advanced Display, 2007(4): 59-63.(in Chinese)