Tiny hole design for high resolution display

QU Lian-jie; GUO Jian; SHI Da-wei; CHEN Xu; MIN Tai-ye; YANG Li

doi:10.3788/YJYXS20153002.0246

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Tiny hole design for high resolution display

Device Physics & Device Technology | 更新时间：2020-08-12

- Tiny hole design for high resolution display
- Chinese Journal of Liquid Crystals and Displays Vol. 30, Issue 2, Pages: 246-250(2015)
- 作者机构：
  
  1. 北京京东方光电科技有限公司, 北京 100176
  2. 北京京东方科技集团股份有限公司北京,100176
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20153002.0246
  CLC： TN27;TN32;O436.1
- Received：09 July 2014，
  
  Revised：07 August 2014，
  
  Published：05 April 2015
- 稿件说明：
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曲连杰, 郭建, 史大为, 陈旭, 闵泰烨, 杨莉. 高分辨率显示用小孔设计技术[J]. 液晶与显示, 2015,30(2): 246-250

QU Lian-jie, GUO Jian, SHI Da-wei, CHEN Xu, MIN Tai-ye, YANG Li. Tiny hole design for high resolution display[J]. , 2015,30(2): 246-250
曲连杰, 郭建, 史大为, 陈旭, 闵泰烨, 杨莉. 高分辨率显示用小孔设计技术[J]. 液晶与显示, 2015,30(2): 246-250 DOI： 10.3788/YJYXS20153002.0246.

QU Lian-jie, GUO Jian, SHI Da-wei, CHEN Xu, MIN Tai-ye, YANG Li. Tiny hole design for high resolution display[J]. , 2015,30(2): 246-250 DOI： 10.3788/YJYXS20153002.0246.

摘要

为了满足市场对显示产品高分辨率的要求

需要从产品的设计和工艺各个方面进行优化

其中过孔尺寸和线宽两个因素对阵列基板分辨率影响最大

本文通过相移掩模技术可以实现对过孔尺寸的精确控制

通过在普通过孔上增加一定厚度和透过率的相移层

并对各种参数下过孔的光透过率进行模拟分析

可以获得不同相移层参数对过孔特性的影响

最后提出一种可以获得稳定微小过孔的方法。结果表明

通过对相移层透过率和宽度的控制

可以获得对曝光光强不敏感的稳定微小过孔

曝光量增大一倍乃至数倍的过程中

过孔尺寸始终保持稳定

提高了工艺容忍度。对于模拟中过孔尺寸可以小于设备的4 m分辨极限。通过减小过孔尺寸

可以有效提升TFT显示产品的开口率

实现产品对高分辨率的要求。

Abstract

In order to meet the requirements of the market for high resolution display products

the design and process technologies of products should be optimized. The most important factors affecting the product characteristics are the size of through-hole and line width. This article explains how to control the exact size of the tiny hole by using phase shift mask technology. By adding a phase shift layer with a certain thickness and transmittance onto the usual through-hole

the light transmittance of tiny hole is analyzed under different parameters. It can be obtained the relation between the transmittance and parameter of phase shift layer

and it can infer a control solution to get a tiny hole with stable size. The results show that

by the control of transmittance and the width of the phase shift layer

a stable size of tiny hole can be obtained with the property of insensitive to the exposure dose. When the exposure dose doubled or even several times in the process

the tiny hole size remains a stabilized value. It means a higher process tolerance. The size of the tiny hole could even be less than the device's resolution limit (4 m). By reducing the size of through-hole

we can effectively increase the aperture ratio of TFT products and get higher PPI(pixel per inch)products.

关键词

Keywords

references

刘亮,王向楠,赵德友,等.TFT-LCD 移动显示窄边框技术进展[J]. 液晶与显示, 2013,28(2):228-232. Liu L, Wang X N, Zhao D Y, et al. Slim border trend of TFT-LCD mobile display panel [J]. Chinese Journal of Liquid Crystals and Displays, 2013, 28(2): 228-232. (in Chinese)[2] Rolland J P, Yoshida A, Davis L D, et al. High-resolution inset head-mounted display [J]. Applied Optics, 1998, 37(19): 4183-4193.[3] Choi S, Shim H, Chang N. Low-power color TFT LCD display for hand-held embedded systems [C]. International Symposium on Low Power Electronics and Design, 2002: 112-117.[4] Bonggu S, Samuel E S, Alexander L G. Loss of phase of collapsing beams [J]. Physical Review Letters, 2012, 108: 043902.[5] 黎午升, 惠官宝, 崔承镇,等. 在镜像投影曝光机上使用相移掩膜提高解像力的初步研究[J]. 液晶与显示, 2014,29(4): 544-547. Li W S, Hui G B, Choi S J, et al. Preliminary study on improving resolution on mirror projection mask aligner with phase shift mask [J]. Chinese Journal of Liquid Crystals and Displays, 2014,29(4): 544-547.(in Chinese)[6] 罗先刚,姚汉民,周冲喜,等.可提高光刻分辨率的新技术[J]. 光学学报, 2000,29(9):834-837. Luo X G, Yao H M, Zhou C X,et al. New technology which can improve lithography resolution [J]. Acta Photonica Sinica, 2000, 29(9):834-837. (in Chinese)[7] 冯伯儒,陈宝钦. 边缘相移掩模技术[J]. 光电工程, 1997,24:12-17. Feng B R, Chen B Q. Edge phase shift mask technology [J]. Opto-Electronic Engineering, 1997, 24: 12-17. (in Chinese)

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Related Institution

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京东方科技集团技术研发中心,北京 1001762. 北京京东方光电科技有限公司

广东工业大学物理与光电工程学院, 广东广州 510090,E-mail:huiguit@163.com

华南理工大学机械与汽车工程学院

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