Tips-PEN thin film carrier mobility evaluated by steady-state SCLC and impedance spectroscopy

JING Ya-ni; TENG Zhi-gang; WEI Zhi-fen

doi:10.3788/YJYXS20142906.1077

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Tips-PEN thin film carrier mobility evaluated by steady-state SCLC and impedance spectroscopy

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- Tips-PEN thin film carrier mobility evaluated by steady-state SCLC and impedance spectroscopy
- Chinese Journal of Liquid Crystals and Displays Vol. 29, Issue 6, Pages: 1077-1082(2014)
- 作者机构：
  
  1. 江南大学物联网工程学院, 江苏无锡 214122
  2. 西安电力整流器有限责任公司, 陕西西安 710077
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20142906.1077
  CLC： TN311+.5
- Received：19 May 2014，
  
  Revised：27 June 2014，
  
  Published：05 December 2014
- 稿件说明：
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景亚霓, 滕支刚, 魏志芬. Tips-PEN薄膜载流子迁移率的稳态SCLC与阻抗谱法测量的研究[J]. 液晶与显示, 2014,29(6): 1077-1082

JING Ya-ni, TENG Zhi-gang, WEI Zhi-fen. Tips-PEN thin film carrier mobility evaluated by steady-state SCLC and impedance spectroscopy[J]. , 2014,29(6): 1077-1082
景亚霓, 滕支刚, 魏志芬. Tips-PEN薄膜载流子迁移率的稳态SCLC与阻抗谱法测量的研究[J]. 液晶与显示, 2014,29(6): 1077-1082 DOI： 10.3788/YJYXS20142906.1077.

JING Ya-ni, TENG Zhi-gang, WEI Zhi-fen. Tips-PEN thin film carrier mobility evaluated by steady-state SCLC and impedance spectroscopy[J]. , 2014,29(6): 1077-1082 DOI： 10.3788/YJYXS20142906.1077.

摘要

利用稳态SCLC法和阻抗谱法测量了由溶液工艺制备的Tips-PEN薄膜的空穴迁移率，并对两种方法的测试结果进行比较和分析。测试样品是p+Si/PEDOT：PSS/Tips-PEN/Ag构成的单载流子器件。稳态SCLC法测试的器件Tips-PEN厚度为87 nm，得到零场迁移率和场依赖因子分别为1.2110

-5

/（Vs）和0.002 4 （cm/V）

1/2

；阻抗谱法测试的器件Tips-PEN厚度为827 nm，得到零场迁移率和场依赖因子分别为1.21910

-5

/（Vs）和0.003 47 （cm/V）

1/2

。稳态SCLC法得到的场依赖因子较小，呈现较弱的场依赖关系，其原因是为得到无陷阱模式下的稳态SCLC需要施加的电场远远高于阻抗谱测量时的电场，以至于注入较高的载流子浓度。这一结果显示了在较高载流子浓度下迁移率与场的依赖变弱，与理论模型和模拟预测的趋势一致。

Abstract

The field-dependent hole mobility of Tips-PEN film prepared by solution-process was extracted with steady-state SCLC and impedance spectroscopy method

and the results of the two methods were compared and analyzed. The samples used in this study have a general structure of p+ Si/PEDOT:PSS / Tips-PEN /Ag

which is a single-carrier device. For Tips-PEN thickness of 87 nm devices

the zero field mobility and the field-dependent factors obtained with steady-state SCLC were 1.21 10

-5

/(Vs) and 0.002 4(cm/V)

1/2

respectively. For thickness of 827 nm device

the zero field mobility and field-dependent factors obtained with impedance spectroscopy were 1.219 10

-5

/(Vs) and 0.003 47(cm/V)

1/2

respectively. The smaller field-dependent factor obtained by steady-state SCLC shows that the mobility is weaker dependent on the field. This is due to much higher electric field applied in order to get steady-state free-trap SCLC than that in impedance spectroscopy and then higher carrier concentration is injected. The result shows that there is weaker electric field dependence of mobility in higher carrier concentration and is consistent with theoretical model and simulation.

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references

赵亚云, 刘志鹏, 赵秀华,等. 两种新型芴衍生物的合成、晶体结构及光谱性能[J]. 发光学报 ,2014, 35(2):156-164. Zhao Y Y, Liu Z P, Zhao X H, et al.Synthesis, crystal structure andspectroscopic properties of two fluorene-based derivatives[J].Chinese J. Luminesence,2014, 35(2): 156-164.(in Chinese)[2] 袁桃利,张方辉,张微,等. 空穴传输层对有机电致发光器件性能的影响[J]. 发光学报, 2013,34(11):157-161. Yuan T L, Zhang F H, Zhang W, et al.The electroluminescent performance of OLED based on different hol transport layer[J].Chinese J. Luminesence,2013, 34(11): 157-161.(in Chinese)[3] Bssler H. Charge transport in disordered organic photoconductors a Monte Carlo simulation study[J].Physica Status Solidi(B),1993, 175(1):15-56.[4] Vissenberg M, Matters M.Theory of the field-effect mobility in amorphous organic transistors[J].Physical Review B,1998, 57(20):12964(1-13).[5] Lebedev E, Dittrich T, Petrova-Koch V, et al.Charge carrier mobility in poly(p-phenylenevinylene) studied by the time-of-flight technique[J].Applied Physics Letters,1997, 71(18): 2686-2688.[6] Campbell A J, Bradley D D C, Antoniadis H. dispersive electron transport in an electroluminescent polyfluorene copolymer measured by the current integration time-of-flight method[J].Applied Physics Letters,2001, 79(14): 2133-2135.[7] Abkowitz M, Facci J S, Rehm J. Direct evaluation of contact injection efficiency into small molecule based transport layers: Influence of extrinsic factors[J].Journal of Applied Physics,1998, 83(5): 2670-2676.[8] Poplavskyy D, Nelson J. Nondispersive hole transport in amorphous films of methoxy-spirofluorene-arylamine organic compound[J].Journal of Applied Physics,2002, 93(1): 341-346.[9] Martens H C F, Brom H B, Blom P W M. Frequency-dependent electrical response of holes in poly(p-phenylene vinylene)[J].Physical Review B,1999, 60(12): R8489-R8492.[10] Park S K, Jackson T N, Anthony J E, et al.High mobility solution processed 6, 13-bis(triisopropyl-silylethynyl) pentacene organic thin film transistors[J].Applied Physics Letters,2007, 91: 063514(1-3).[11] Lee S H, Choi M H, Han S H, et al.High-performance thin-film transistor with 6, 13-bis(triisopropylsilylethynyl) pentacene by inkjet printing[J].Organic Electronics,2008, 9(5): 721-726.[12] Lloyd M T, Mayer A C, Tayi A S, et al.Photovoltaic cells from a soluble pentacene derivative[J].Organic Electronics,2006, 7(5): 243-248.[13] Hong J P, Park A Y, Lee S, et al.Tuning of Ag work functions by self-assembled monolayers of aromatic thiols for an efficient hole injection for solution processed triisopropylsilylethynyl pentacene organic thin film transistors[J].Applied Physics Letters,2008, 92: 143311(1-3).[14] Blom P W M, Dejong M J M, Vanmunster M G. Electric-field and temperature dependence of the hole mobility in poly(p-phenylene vinylene)[J].Physical Review B,1997, 55(2): R656-R659.[15] Murgatroyd P N. Theory of space-charge-limited current enhanced by Frenkel effect[J].Journal of Physics D:Applied Physics,1970, 3(2):151.[16] 滕支刚,冷华星,张玲珑,等.退火时间对溶液法制备Tips-Pentacene 电流传输特性的影响[J]. 液晶与显示, 2014, 29(2):219-223. Teng Z G, Leng H X, Zhang L L, et al.Influence of annealing time on charge transport properties in solution-processed tipd-pentacene[J].Chinese Journal of Liquid Crystals and Displays,2014, 29(2):219-223.(in Chinese)[17] Tsang S W, So S K, Xu J B.Application of admittance spectroscopy to evaluate carrier mobility in organic charge transport materials[J].Journal of Applied Physics,2006, 99(1):013706(1-7).[18] Oliver J W, Ralf K, Arvid H. Hole mobility of 1-NaphDATA[J].Journal of Applied Physics,2008, 103(4):043709.[19] Wang Y P, Chen J S, Dong LS, et al.Determination of electron mobility in tris(8-hydroxy-quinolinato) aluminumby admittance spectroscopy[J].Journal of Applied Physics,2013,114(11): 113703.[20] Roichman Y, Tessler N. Charge transport in conjugated polymers: The influence of charge concentration[J].Synthetic Metals,2003,135:443-444.

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