Preparation and properties of 2, 7-didodecyn-1-yl[1]benzothieno[3,2-b][1]benz-othiophene

PENG Rui; CHEN Meng-jie; XIONG Xian-feng; WANG Ying; QIU Long-zhen

doi:10.3788/YJYXS20142902.0172

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Preparation and properties of 2, 7-didodecyn-1-yl[1]benzothieno[3,2-b][1]benz-othiophene

Table of contents | 更新时间：2020-08-12

- Preparation and properties of 2, 7-didodecyn-1-yl[1]benzothieno[3,2-b][1]benz-othiophene
- Chinese Journal of Liquid Crystals and Displays Vol. 29, Issue 2, Pages: 172-177(2014)
- 作者机构：
  
  1. 特种显示技术教育部重点实验室,特种显示技术国家工程实验室,现代显示技术省部共建国家重点实验室培育基地, 合肥工业大学光电技术研究院,安徽合肥,230009
  2. 合肥工业大学化学工程学院,安徽合肥,230009
  3. 合肥工业大学仪器科学与光电工程学院,安徽合肥,230009
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20142902.0172
  CLC： TN386
- Received：10 December 2013，
  
  Revised：31 December 2013，
  
  Published：05 March 2014
- 稿件说明：
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彭锐, 陈梦婕, 熊贤风, 王迎, 邱龙臻. 2,7-二癸基-[1]苯并噻吩[3,2-b][1]-苯并噻吩的制备及性能研究[J]. 液晶与显示, 2014,29(2): 172-177

PENG Rui, CHEN Meng-jie, XIONG Xian-feng, WANG Ying, QIU Long-zhen. Preparation and properties of 2, 7-didodecyn-1-yl[1]benzothieno[3,2-b][1]benz-othiophene[J]. , 2014,29(2): 172-177
彭锐, 陈梦婕, 熊贤风, 王迎, 邱龙臻. 2,7-二癸基-[1]苯并噻吩[3,2-b][1]-苯并噻吩的制备及性能研究[J]. 液晶与显示, 2014,29(2): 172-177 DOI： 10.3788/YJYXS20142902.0172.

PENG Rui, CHEN Meng-jie, XIONG Xian-feng, WANG Ying, QIU Long-zhen. Preparation and properties of 2, 7-didodecyn-1-yl[1]benzothieno[3,2-b][1]benz-othiophene[J]. , 2014,29(2): 172-177 DOI： 10.3788/YJYXS20142902.0172.

摘要

以邻氯苯甲醛、 NaHS

O、癸酰氯为原料，经消去、酰化，还原反应合成2，7-二癸基二苯并二噻吩（C

-BTBT）。通过核磁共振表征和确证。本文研究了C

-BTBT光学性能、热学性能、电学性能以及环境稳定性。紫外-荧光光谱研究证明，化合物在近紫外光激发下发出明亮的蓝光，发射中心波长在352 nm。液晶相的相转变温度通过差热扫描仪测定，测量结果为熔点

=112 ℃，清亮点

=125 ℃。通过喷墨打印技术制备了底栅顶接触结构的2，7-二癸基二苯并二噻吩的OTFT器件，场效应平均迁移率达到0.1 cm

/Vs，最大迁移率达到0.25 cm

/Vs，开关比超过10

。放置空气中不同时间，器件开态电流和开关比没有较大变化。

Abstract

7-Didodecyn-1-yl[1]benzothieno[3

2-b]

[1]benzothiophene (C10-BTBT) was synthesized in the base of o-chlorobenzaldehyde

NaSH

O and decanoyl chloride by elimination reaction

acrylation reaction and reduction reaction.The structure of compound was confirmed by

HNMR. The properties of optical

electrical and environmental stability were studied. Its optical properties were characterized by the UV absorption and fluorescence spectra.The results indicated that maximum emission peak of the compound is at 352 nm which is the typical blue fluorescene.The phase transition temperature was measured by DSC

the transition temperature

=112 ℃

=125 ℃.The OTFT devices with bottom-gate and top-contact structure based on C10-BTBT were preparated by inkjet printing method

the average field-effect mobility was up to 0.1 cm

/Vs and the maximum mobility was 0.25 cm

/Vs

the on/off curruent ratio exceeded 10

. Organic thin-film transistor was placed in air different time

The on/off current

on/off ratio of organic thin-film transistor had no more changes.

关键词

Keywords

references

Dimitrakopoulos C D, Malenfant P R, Organic thin film transistors for large area electronics[J].Adv. Mater., 2002, 14 (2), 99-117.[2] Takimiya K, Ebata H, Sakamoto K, et al.2, 7-Diphenyl [1] benzothieno [3, 2-b] benzothiophene, a new organic semiconductor for air-stable organic field-effect transistors with mobilities up to 2.0 cm2 V-1s-1 [J].J. Am. Chem. Soc.,2006, 128 (39):12604-12605.[3] Friend R, Gymer R, Holmes A, et al.Electroluminescence in conjugated polymers [J].Nature, 1999, 397 (6715): 121-128.[4] Brabec C J, Sariciftci N S, Hummelen J C.Plastic solar cells [J].Adv. Funct. Mater.,2001, 11 (1):15-26.[5] Choi D, Ahn B, Kim S H, et al.High-performance triisopropylsilylethynyl pentacene transistors via spin coating with a crystallization-assisting layer [J].ACS Applied Materials & Interfaces,2011, 4 (1):117-122.[6] Delongchamp D M, Kline R J, Lin E K, et al.High carrier mobility polythiophene thin films: structure determination by experiment and theory [J].Adv. Mater.,2007, 19 (6):833-837.[7] Sekitani T, Noguchi Y, Hata K, et al.A rubberlike stretchable active matrix using elastic conductors [J].Science,2008, 321 (5895):1468-1472.[8] Sun X, Di C A, Liu Y, Engineering of the dielectricsemiconductor interface in organic field-effect transistors [J].J. Mater. Chem., 2010, 20 (13):2599-2611.[9] Hamadani B, Gundlach D, Mcculloch I, et al.Undoped polythiophene field-effect transistors with mobility of 1< span style= [J].Appl. Phys. Lett.,2007, 91 (24):243512(1-3).[10] Mcculloch I, Heeney M, Bailey C, et al.Liquid-crystalline semiconducting polymers with high charge-carrier mobility[J].Nature Materials,2006, 5 (4):328-333.[11] Ong B S, Wu Y, Liu P, et al.High-performance semiconducting polythiophenes for organic thin-film transistors [J].J. Am. Chem. Soc.,2004, 126 (11):3378-3379.[12] Zhang L, Di C A, Yu G, et al.Solution processed organic field-effect transistors and their application in printed logic circuits [J].J. Mater. Chem.,2010, 20 (34):7059-7073.[13] Anthony J E, Brooks J S, Eaton D L, et al.Functionalized pentacene: Improved electronic properties from control of solid-state order [J].J. Am. Chem. Soc.,2001, 123 (38):9482-9483.[14] Payne M M, Parkin S R, Anthony J E, et al.Organic field-effect transistors from solution-deposited functionalized acenes with mobilities as high as 1 cm2/Vs [J].J. Am. Chem. Soc.,2005, 127 (14):4986-4987.[15] Sheraw C D, Jackson T N, Eaton D L, et al.Functionalized pentacene active layer organic thin‐film transistors [J].Adv. Mater.,2003, 15 (23):2009-2011.[16] Laquindanum J G, Katz H E, Lovinger A J.Synthesis, morphology, and field-effect mobility of anthradithiophenes [J].J. Am. Chem. Soc.,1998, 120 (4):664-672.[17] Ebata H, Izawa T, Miyazaki E, et al.Highly soluble[1] benzothieno[3, 2-b]benzothiophene (BTBT) derivatives for high-performance, solution-processed organic field-effect transistors [J].J. Am. Chem. Soc.,2007, 129 (51):15732-15733.[18] Cho J H, Lee J, Xia Y, et al.Printable ion-gel gate dielectrics for low-voltage polymer thin-film transistors on plastic [J].Nature Materials,2008, 7 (11):900-906.

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